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    실리콘 태양전지 및 그의 제조방법
    1.
    发明公开
    실리콘 태양전지 및 그의 제조방법 无效
    硅太阳能电池及其制造方法

    公开(公告)号：KR1020120102908A

    公开(公告)日：2012-09-19

    申请号：KR1020110020795

    申请日：2011-03-09

    Applicant: 재단법인대구경북과학기술원

    Inventor： 백성호 ,  김재현 ,  최호진 ,  장환수

    IPC: H01L31/04 ,  H01L31/0236 ,  H01L31/18

    CPC classification number: Y02E10/50 ,  Y02P70/521 ,  H01L31/04 ,  H01L31/0236 ,  H01L31/18

    Abstract: PURPOSE: A silicon solar cell and a manufacturing method thereof are provided to remarkably reduce reflectivity by reducing light entered from outside through surface texturing to be re-reflected. CONSTITUTION: An emitter layer of conductive type which is opposite to a silicon substrate is formed on the silicon substrate(S210). A self-assembled monolayer film of a colloidal particle is formed on the emitter layer(S220). The surface of the emitter layer is textured by performing metallic catalyst chemical etching by using the self-assembled monolayer film as a mask(S230). A metal particle and the self-assembled monolayer film remaining after metallic catalyst chemical etching are eliminated(S240). [Reference numerals] (AA) Start; (BB) End; (S210) An emitter layer of opposite conductive type is formed on a silicon substrate; (S220) A self-assembled monolayer film of a colloidal particle is formed on the emitter layer; (S230) Metallic catalyst chemical etching is performed; (S240) A remaining metal particle and the self-assembled monolayer film are eliminated

    Abstract translation: 目的：提供硅太阳能电池及其制造方法，通过减少从外部通过表面纹理输入的光再次反射来显着降低反射率。 构成：在硅衬底上形成与硅衬底相对的导电类型的发射极层（S210）。 在发射极层上形成胶体粒子的自组装单层膜（S220）。 通过使用自组装单层膜作为掩模，通过进行金属催化剂化学蚀刻来对发射极层的表面进行纹理化（S230）。 在金属催化剂化学蚀刻后残留的金属颗粒和自组装单层膜被消除（S240）。 （附图标记）（AA）开始; （BB）结束; （S210）在硅衬底上形成相反导电类型的发射极层; （S220）在发射极层上形成胶体粒子的自组装单层膜; （S230）进行金属催化剂化学蚀刻; （S240）除去剩余的金属粒子和自组装的单层膜

    와이어 어레이를 이용한 태양광 전지 및 그 제조 방법
    5.
    发明授权
    와이어 어레이를 이용한 태양광 전지 및 그 제조 방법 有权
    具有半导体纳米/微细线阵列的太阳能电池和制造太阳能电池的方法

    公开(公告)号：KR101027493B1

    公开(公告)日：2011-04-06

    申请号：KR1020090131472

    申请日：2009-12-28

    Applicant: 재단법인대구경북과학기술원

    Inventor： 김재현 ,  백성호 ,  우성호 ,  장환수 ,  최호진

    IPC: H01L31/04

    CPC classification number: Y02E10/50 ,  H01L31/04

    Abstract: PURPOSE: A solar cell using a wire array and a manufacturing method thereof are provided to improve the efficiency of the solar cell at a wide temperature range by preventing the recombination of carriers at low and high temperatures by minimizing a moving distance of minority carriers. CONSTITUTION: A substrate(300) and a wire(312) are formed on a wire array. A transparent electrode layer(320) is formed on the surface of the wire array. A filling layer(330) made of insulation materials fills a space between wires with the transparent electrode layer. A top transparent electrode layer(340) is formed on the upper surface of the filling layer. A top electrode(350) is formed on the upper surface of the transparent electrode layer.

    Abstract translation: 目的：提供一种使用导线阵列的太阳能电池及其制造方法，通过使少数载流子的移动距离最小化，能够防止在低温高温下载流子的复合，从而提高太阳能电池在宽温度范围内的效率。 构成：在线阵列上形成衬底（300）和线（312）。 在导线阵列的表面上形成透明电极层（320）。 由绝缘材料制成的填充层（330）填充导线与透明电极层之间的空间。 顶部透明电极层（340）形成在填充层的上表面上。 顶部电极（350）形成在透明电极层的上表面上。

    다직경 실리콘 와이어 구조체의 제조방법
    6.
    发明授权
    다직경 실리콘 와이어 구조체의 제조방법 有权
    多层硅线结构的制造方法

    公开(公告)号：KR101164113B1

    公开(公告)日：2012-07-12

    申请号：KR1020110029666

    申请日：2011-03-31

    Applicant: 재단법인대구경북과학기술원

    Inventor： 최호진 ,  장환수 ,  백성호 ,  김재현

    IPC: H01L21/306

    CPC classification number: H01L21/02019 ,  H01L31/02363

    Abstract: PURPOSE: A method of forming a multi-diameter silicon wire structure is provided to form a silicon wire having a wide surface area and high efficiency through metal-assisted catalytic etching. CONSTITUTION: An etching mask is patterned on the surface of a silicon substrate. The surface of silicon substrate, on which the etching mask is patterned, is chemically etched. A silicon wire whose longitudinal diameter changes is formed by successively changing one of any processing condition selected from a group consisting of the composition of an etching solution, etching time, and the temperature of the etching solution. A metallic catalyst is deposited on the surface of the silicon substrate.

    Abstract translation: 目的：提供一种形成多直径硅线结构的方法，以通过金属辅助催化蚀刻形成具有宽表面积和高效率的硅线。 构成：在硅衬底的表面上刻蚀蚀刻掩模。 蚀刻掩模图案化的硅衬底的表面被化学蚀刻。 通过依次改变选自由蚀刻溶液的组成，蚀刻时间和蚀刻溶液的温度组成的组中的任何一种处理条件形成纵向直径变化的硅线。 金属催化剂沉积在硅衬底的表面上。

    실리콘 와이어 구조체의 제조방법
    8.
    发明公开
    실리콘 와이어 구조체의 제조방법 有权
    硅线结构的制作方法

    公开(公告)号：KR1020120015512A

    公开(公告)日：2012-02-22

    申请号：KR1020100077669

    申请日：2010-08-12

    Applicant: 재단법인대구경북과학기술원

    Inventor： 최호진 ,  장환수 ,  김재현 ,  백성호 ,  김성빈 ,  오병윤

    IPC: H01L21/306

    CPC classification number: H01L21/02019 ,  H01L31/02363

    Abstract: PURPOSE: A method for manufacturing a silicon wire structure is provided to reduce a width of a silicon wire by forming a plurality of etch pits in a region of the same area. CONSTITUTION: A mask layer is patterned on a silicon wafer(S1). A part of the silicon wafer, which is not covered with the mask layer, is chemically etched with a metallic catalyst(S2). Residual metal is removed from the silicon wafer after chemical etching with the metallic catalyst(S3). The silicon wafer including an etch pit is formed by eliminating the mask layer(S4). A silicon wire array is formed by electrochemically etching silicon wafer including the etch pit(S5).

    Abstract translation: 目的：提供一种制造硅线结构的方法，通过在相同区域的区域中形成多个蚀刻凹坑来减小硅线的宽度。 构成：在硅晶片上形成掩模层（S1）。 未被掩模层覆盖的硅晶片的一部分用金属催化剂进行化学蚀刻（S2）。 用金属催化剂进行化学蚀刻后，从硅晶片除去残余金属（S3）。 通过消除掩模层形成包括蚀刻坑的硅晶片（S4）。 通过电化学蚀刻包括蚀刻坑的硅晶片形成硅线阵列（S5）。

    하이브리드 태양전지 및 그 제조 방법
    9.
    发明公开
    하이브리드 태양전지 및 그 제조 방법 有权
    混合太阳能电池及其制造方法

    公开(公告)号：KR1020110075233A

    公开(公告)日：2011-07-06

    申请号：KR1020090131623

    申请日：2009-12-28

    Applicant: 재단법인대구경북과학기술원

    Inventor： 우성호 ,  김재현 ,  백성호 ,  장환수 ,  최호진 ,  김성빈

    IPC: H01L51/42 ,  H01L31/072

    CPC classification number: Y02E10/549 ,  Y02P70/521 ,  H01L51/42 ,  H01L31/072

    Abstract: PURPOSE: A hybrid solar cell and a manufacturing method thereof are provided to improve low charge mobility and electrical conductivity of an organic semiconductor material by using an inorganic material. CONSTITUTION: A hybrid solar battery comprises a substrate(100), a transparent electrode(110), a buffer layer(120), a mixture layer(130A) including a silicon nano structure and an organic semiconductor, and an upper electrode(140). The transparent electrode is arranged on the substrate. The buffer layer can be formed on the transparent electrode(110). A mixed layer of an N type silicon-based nano structure and a P type organic semiconductor or a mixed layer of a P type silicon-based nano structure and an N type organic semiconductor is formed between the two facing electrodes.

    Abstract translation: 目的：提供一种混合太阳能电池及其制造方法，以通过使用无机材料来改善有机半导体材料的低电荷迁移率和导电性。 构成：混合太阳能电池包括基板（100），透明电极（110），缓冲层（120），包括硅纳米结构和有机半导体的混合层（130A）和上电极（140） 。 透明电极配置在基板上。 缓冲层可以形成在透明电极（110）上。 在两个相对的电极之间形成N型硅基纳米结构和P型有机半导体的混合层或P型硅基纳米结构和N型有机半导体的混合层。

    실리콘 와이어 구조체의 제조방법
    10.
    发明授权
    실리콘 와이어 구조체의 제조방법 有权
    硅丝结构的制造方法

    公开(公告)号：KR101264877B1

    公开(公告)日：2013-05-15

    申请号：KR1020100077669

    申请日：2010-08-12

    Applicant: 재단법인대구경북과학기술원

    Inventor： 최호진 ,  장환수 ,  김재현 ,  백성호 ,  김성빈 ,  오병윤

    IPC: H01L21/306

    Abstract: 실리콘웨이퍼위에마스크층을패터닝하는단계; 상기마스크층으로덮이지않은상기실리콘웨이퍼의일부를금속촉매화학적식각하는단계; 상기금속촉매화학적식각이후상기실리콘웨이퍼로부터잔존금속을제거하는단계; 상기잔존금속제거이후상기마스크층을제거하여에치피트가형성된실리콘웨이퍼를얻는단계; 및상기에치피트가형성된상기실리콘웨이퍼를전기화학적식각처리하여실리콘와이어어레이를형성하는단계를포함하는실리콘와이어구조체의제조방법이제공된다.

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