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公开(公告)号:KR1020170120328A
公开(公告)日:2017-10-31
申请号:KR1020160048652
申请日:2016-04-21
Applicant: 조선대학교산학협력단 , 한국광기술원
Abstract: 본발명의백색광원에관한것으로서, 광을출사하는발광다이오드와, 발광다이오드에결합되어발광다이오드로부터출사되는광을백색광으로변환하는백색변환층을구비하고, 백색변환층은 CHNHPbClBr(0 ≤ x ≤ 3)와 CHNHPbBrI(0 ≤ y ≤ 3) 중적어도하나를포함하는유기금속할로겐화물페로보스카이트물질이포함된다. 이러한백색광원에의하면, 가시광대역에서태양광스펙트럼과유사한발광패턴을제공할수 있다.
Abstract translation: 根据本发明的白光源包括用于发光的发光二极管和用于将从发光二极管发射的光转换成白光的白色转换层, 3)和CHNHPbBrI(0≤y≤3)。 根据这种白色光源,可以提供与可见光波段处的太阳光谱相似的光发射图案。
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公开(公告)号:KR1020160086004A
公开(公告)日:2016-07-19
申请号:KR1020150002955
申请日:2015-01-08
Applicant: 조선대학교산학협력단 , 한국광기술원
CPC classification number: F21V5/002 , F21S2/005 , F21V5/04 , F21Y2101/00
Abstract: 본발명은 LED칩을 LED램프의렌즈층에나노크기의입자들을결합하여미 산란을유도함으로써후방으로의배광영역을확장시킬수 있는 COB 타입무지향성 LED램프에관한것으로서, LED칩과, 상기 LED칩이실장되는회로기판을포함하는조명부와; 상기조명부가설치되는본체와; 상기조명부에전원을공급하도록상기본체에결합되어외부전원에접속되는소켓부와; 상기조명부의상부를감싸도록형성되어상기조명부를보호하며상기 LED칩에서방출된빛이통과할수 있도록투명한소재로형성된베이스와, 상기베이스내부에분포되어상기베이스를통과하는빛을미 산란시키기위한산란입자들을포함하는렌즈부;를구비한다. 본발명에따른 COB 타입무지향성조명램프는 LED의배치를변경하거나, 램프의내부구조를변경하지않고후배광을형성하여제작단가의상승없이기존의조명과같은배광분포를얻음으로써제조단가하락을통해대중화에기여할수 있을뿐만아니라, 렌즈부에산란입자가분포된구조를적용함으로써원하는배광분포및 휘도의손실없이기존의조명과유사한배광분포및 조도를얻을수 있는장점을갖는다.
Abstract translation: 本发明涉及一种板载(COB)型无方向性LED灯。 纳米颗粒耦合到LED灯的透镜层以引起精细的散射,以使LED芯片在向后的方向上的光分布面积扩大。 LED灯包括:包括LED芯片的照明单元和安装有LED芯片的电路板; 具有安装在其上的照明单元的主体; 插座单元,其耦合到主体并连接到外部电源以向照明单元供电; 以及透镜单元,其包括由透明材料制成的基底,以使从LED芯片发出的光通过,并且形成为围绕照明单元的上部,以保护照明单元并散射分散在基座中的颗粒散射 光穿过基地。 COB型无方向性照明灯可以在不调节LED布置或改变灯的内部结构的情况下获得后分配光,以获得与常规灯相同的光分布,而不增加制造成本。 因此,COB型无方向性照明灯可以降低制造成本,以使得能够普及并且应用散射颗粒分布在透镜单元中的结构以获得期望的光分布或与没有亮度的常规灯相同的配光和亮度 失利。
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公开(公告)号:KR101426849B1
公开(公告)日:2014-08-13
申请号:KR1020130016711
申请日:2013-02-18
Applicant: 조선대학교산학협력단
CPC classification number: H01L33/42 , H01L21/02603 , H01L2933/0016
Abstract: The present invention relates to a nitride-based light emitting diode with a metal nanowire transparent electrode and a method of manufacturing the same. The present invention includes a substrate, an n-type nitride semiconductor layer, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an n-type electrode formed on one side of the n-type nitride semiconductor layer, a p-type electrode formed on one side of the p-type nitride semiconductor layer, and a transparent electrode layer which is formed with a metal nanowire in the exposed part of the p-type nitride semiconductor layer. According to such the nitride-based light emitting diode, a transparent electrode layer is formed on the p-type nitride semiconductor layer by using a metal nanowire, thereby preventing the deterioration of optical transmission characteristic in an ultraviolet ray band and facilitating manufacture.
Abstract translation: 本发明涉及一种具有金属纳米线透明电极的氮化物系发光二极管及其制造方法。 本发明包括基板,n型氮化物半导体层,形成在n型氮化物半导体层上的有源层,形成在有源层上的p型氮化物半导体层,形成在一侧的n型电极 n型氮化物半导体层的p型电极,形成在p型氮化物半导体层的一侧的p型电极和在p型氮化物半导体的露出部分中形成有金属纳米线的透明电极层 层。 根据这样的氮化物系发光二极管,通过使用金属纳米线,在p型氮化物半导体层上形成透明电极层,防止紫外线带的光传输特性恶化,便于制造。
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公开(公告)号:KR1020130101691A
公开(公告)日:2013-09-16
申请号:KR1020120022611
申请日:2012-03-06
Applicant: 조선대학교산학협력단 , 이온나이스 유한회사
IPC: F21V7/04 , F21V29/70 , F21V17/02 , F21W131/103
CPC classification number: F21V7/04 , F21V14/04 , F21V17/02 , F21V29/70 , F21W2131/103
Abstract: PURPOSE: A light emitting diode (LED) street lamp is provided to have uniform light distribution property using an LED which is strong on heat than a lens and using a reflective unit in each LED and to improve durability. CONSTITUTION: An LED street lamp comprises a radiator (30), a substrate (40), a reflector (50), and a housing for protecting the same. The radiator emits heat generated in the substrate. The substrate comprises multiple LEDs which are arranged with a constant pattern and reflector is put on the substrate. The substrate comprises a penetration unit for exposing the LED and multiple reflective units capable of directing light which is emitted from the LED to each direction.
Abstract translation: 目的:提供一种发光二极管(LED)路灯,其具有均匀的光分布特性,使用热量比透镜强的LED,并且在每个LED中使用反射单元并且提高耐久性。 构成:LED路灯包括散热器(30),基板(40),反射器(50)和用于保护它的外壳。 散热器散发基板中产生的热量。 基板包括以恒定图案布置的多个LED,并且将反射器放置在基板上。 衬底包括用于暴露LED的穿透单元和能够将从LED发射的光引导到每个方向的多个反射单元。
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公开(公告)号:KR101301847B1
公开(公告)日:2013-08-29
申请号:KR1020120012381
申请日:2012-02-07
Applicant: 조선대학교산학협력단
Abstract: 본 발명에 따른 질화물계 발광 다이오드 및 이의 제조방법은 기판, 상기 기판상에 형성된 GaN 층, 상기 GaN 층 상부에서 n-형 Al
x Ga
y In
z N(0≤x,y,z≤1)로 형성되며 광도파로 구조가 포함된 n-형 하부접촉층, 상기 n-형 하부접촉층 상부에 형성되며 n-형 Al
x Ga
y In
z N(0≤x,y,z≤1)로 구성되는 활성층, 상기 활성층 상부에 형성되며 p-형 Al
x Ga
y In
z N(0≤x,y,z≤1)로 구성되는 p-형 상부접촉층, 상기 n-형 하부접촉층 상의 노출된 영역에 형성된 n-형 전극; 및 상기 p-형 상부접촉층 상에 형성된 p-형 전극을 포함하는 것을 특징으로 한다.-
公开(公告)号:KR1020130091103A
公开(公告)日:2013-08-16
申请号:KR1020120012381
申请日:2012-02-07
Applicant: 조선대학교산학협력단
CPC classification number: H01L33/06 , H01L33/007 , H01L33/32 , H01L2933/0008
Abstract: PURPOSE: A nitride based light emitting diode and a manufacturing method thereof are provided to implement a light emitting device of high efficiency by forming an optical waveguide structure on an n-type bottom contact layer. CONSTITUTION: A GaN layer (200) is formed on a substrate. An n-type bottom contact layer (300) is formed on the upper side of the GaN layer. The n-type bottom contact layer includes an optical waveguide structure. An active layer is formed on the upper side of the n-type bottom contact layer. A p-type top contact layer (700) is formed on the upper side of the active layer.
Abstract translation: 目的:提供一种氮化物基发光二极管及其制造方法,通过在n型底部接触层上形成光波导结构来实现高效率的发光元件。 构成:在衬底上形成GaN层(200)。 在GaN层的上侧形成n型底部接触层(300)。 n型底部接触层包括光波导结构。 在n型底部接触层的上侧形成有源层。 在有源层的上侧形成p型顶部接触层(700)。
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