公开(公告)号：KR101370043B1

公开(公告)日：2014-03-04

申请号：KR1020120107265

申请日：2012-09-26

Applicant: 조선대학교산학협력단

Inventor： 권민기 ,  강용진 ,  김진원 ,  나만균 ,  김주현

IPC: G01N25/72 ,  G01N21/88

CPC classification number: G01N25/72 ,  G01N21/88 ,  G01N2201/102

Abstract: The present invention relates to a heating apparatus, comprising; a lamp unit to heat inspection object bodies to allow detection of defect status of the inspection object bodies by using a thermographic camera; a main body to install the lamp unit; an optical unit installed in the main body to make uniform an energy density distribution of the light spot incident on a light irradiation plane of the inspection object body by refracting light emitted from the lamp unit and to allow changes of a size and a shape of the light spot so as to correspond to the shape of the light irradiation plane. The heating apparatus according to the present invention can provide concentrated heat for surfaces of the inspection object body for inspection by varying a size of a light spot or light bundle irradiated from the lamp unit toward the inspection object body. In addition, energy densities can be provided uniformly to the surfaces of the inspection object body, and hence defect status of the inspection object body can be accurately inspected since shapes of a light spot or light bundle can be adjusted to a shape corresponding to the shape of the surfaces of the inspection object body according to arrangement directions of the inspection object body.

Abstract translation: 本发明涉及一种加热装置，包括： 灯单元，用于加热检查物体以允许通过使用热成像照相机检测检查对象物体的缺陷状态; 安装灯具的主体; 安装在主体中的光学单元，通过折射从灯单元发出的光来使入射到检查对象体的光照射平面上的光斑的能量密度分布均匀，并允许改变尺寸和形状 光点，以对应于光照射平面的形状。 根据本发明的加热装置可以通过改变从灯单元照射到检查对象体的光斑或光束的尺寸来提供用于检查的检查对象体的表面的集中热。 此外，能够将能量密度均匀地提供给检查对象物体的表面，因此可以精确地检查检查对象体的缺陷状态，因为可以将光斑或光束的形状调整为与形状对应的形状 根据检查对象体的布置方向检查检查对象体的表面。

公开(公告)号：KR101343028B1

公开(公告)日：2013-12-18

申请号：KR1020120022611

申请日：2012-03-06

Applicant: 조선대학교산학협력단 ,  이온나이스 유한회사

Inventor： 권민기 ,  이현규 ,  최판주 ,  배호준 ,  강용진 ,  최유민 ,  노정조 ,  김자연

IPC: F21V7/04 ,  F21V29/70 ,  F21V17/02 ,  F21W131/103

Abstract: 본발명에따른우수한배광분포특성을가진 LED 가로등이개시된다. 본 LED 가로등은하우징, 하우징내에설치되는기판, 기판위에설치된복수의 LED, 및반사체를포함한다. 반사체는복수의 LED를각각노출시키기위한복수의관통부, 및복수의관통부둘레에각각배치된복수의반사유닛을포함한다. 복수의반사유닛은각각복수의 LED로부터복수의관통부를통해방출된각각의광을반사시키도록구성된다.

Abstract translation: 目的：提供一种发光二极管（LED）路灯，其使用与透镜相比强的热量并且在每个LED中使用反射单元并提高耐用性的LED具有均匀的配光特性。 构成：LED路灯包括散热器（30），基板（40），反射器（50）和用于保护其的外壳。 散热器发射在基板中产生的热量。 衬底包括以恒定图案布置的多个LED，并且将反射体放置在衬底上。 基板包括用于暴露LED的穿透单元和能够将从LED发射的光引导到每个方向的多个反射单元。

公开(公告)号：KR1020130101691A

公开(公告)日：2013-09-16

申请号：KR1020120022611

申请日：2012-03-06

Applicant: 조선대학교산학협력단 ,  이온나이스 유한회사

Inventor： 권민기 ,  이현규 ,  최판주 ,  배호준 ,  강용진 ,  최유민 ,  노정조 ,  김자연

IPC: F21V7/04 ,  F21V29/70 ,  F21V17/02 ,  F21W131/103

CPC classification number: F21V7/04 ,  F21V14/04 ,  F21V17/02 ,  F21V29/70 ,  F21W2131/103

Abstract: PURPOSE: A light emitting diode (LED) street lamp is provided to have uniform light distribution property using an LED which is strong on heat than a lens and using a reflective unit in each LED and to improve durability. CONSTITUTION: An LED street lamp comprises a radiator (30), a substrate (40), a reflector (50), and a housing for protecting the same. The radiator emits heat generated in the substrate. The substrate comprises multiple LEDs which are arranged with a constant pattern and reflector is put on the substrate. The substrate comprises a penetration unit for exposing the LED and multiple reflective units capable of directing light which is emitted from the LED to each direction.

Abstract translation: 目的：提供一种发光二极管（LED）路灯，其具有均匀的光分布特性，使用热量比透镜强的LED，并且在每个LED中使用反射单元并且提高耐久性。 构成：LED路灯包括散热器（30），基板（40），反射器（50）和用于保护它的外壳。 散热器散发基板中产生的热量。 基板包括以恒定图案布置的多个LED，并且将反射器放置在基板上。 衬底包括用于暴露LED的穿透单元和能够将从LED发射的光引导到每个方向的多个反射单元。

公开(公告)号：KR101301847B1

公开(公告)日：2013-08-29

申请号：KR1020120012381

申请日：2012-02-07

Applicant: 조선대학교산학협력단

Inventor： 권민기 ,  최판주 ,  배호준 ,  강용진 ,  최유민 ,  김자연

IPC: H01L33/32 ,  H01L33/22

Abstract: 본 발명에 따른 질화물계 발광 다이오드 및 이의 제조방법은 기판, 상기 기판상에 형성된 GaN 층, 상기 GaN 층 상부에서 n-형 Al
x Ga
y In
z N(0≤x,y,z≤1)로 형성되며 광도파로 구조가 포함된 n-형 하부접촉층, 상기 n-형 하부접촉층 상부에 형성되며 n-형 Al
x Ga
y In
z N(0≤x,y,z≤1)로 구성되는 활성층, 상기 활성층 상부에 형성되며 p-형 Al
x Ga
y In
z N(0≤x,y,z≤1)로 구성되는 p-형 상부접촉층, 상기 n-형 하부접촉층 상의 노출된 영역에 형성된 n-형 전극; 및 상기 p-형 상부접촉층 상에 형성된 p-형 전극을 포함하는 것을 특징으로 한다.

公开(公告)号：KR1020130091103A

公开(公告)日：2013-08-16

申请号：KR1020120012381

申请日：2012-02-07

Applicant: 조선대학교산학협력단

Inventor： 권민기 ,  최판주 ,  배호준 ,  강용진 ,  최유민 ,  김자연

IPC: H01L33/32 ,  H01L33/22

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/32 ,  H01L2933/0008

Abstract: PURPOSE: A nitride based light emitting diode and a manufacturing method thereof are provided to implement a light emitting device of high efficiency by forming an optical waveguide structure on an n-type bottom contact layer. CONSTITUTION: A GaN layer (200) is formed on a substrate. An n-type bottom contact layer (300) is formed on the upper side of the GaN layer. The n-type bottom contact layer includes an optical waveguide structure. An active layer is formed on the upper side of the n-type bottom contact layer. A p-type top contact layer (700) is formed on the upper side of the active layer.

Abstract translation: 目的：提供一种氮化物基发光二极管及其制造方法，通过在n型底部接触层上形成光波导结构来实现高效率的发光元件。 构成：在衬底上形成GaN层（200）。 在GaN层的上侧形成n型底部接触层（300）。 n型底部接触层包括光波导结构。 在n型底部接触层的上侧形成有源层。 在有源层的上侧形成p型顶部接触层（700）。