고단열 에어로젤 함침 섬유의 제조 방법
    11.
    发明公开
    고단열 에어로젤 함침 섬유의 제조 방법 有权
    制备高绝缘空气玻璃纤维的方法

    公开(公告)号:KR1020110082379A

    公开(公告)日:2011-07-19

    申请号:KR1020100002337

    申请日:2010-01-11

    Inventor: 오영제 김경호

    Abstract: PURPOSE: A manufacturing method of high insulation aerogel impregnated fiber is provided to offer aerogel non-woven fabric/fiber of ambient drying type having low thermal conductivity, soundproof property and improved energy-saving efficiency. CONSTITUTION: The manufacturing method of high insulation aerogel impregnated fiber is as follows. Silica sol mixes alcoxysilane and isopropyl alcohol, and then proceeds hydrolysis by adding an acid solution to the mixed solution. A polymerization reaction of the silica sol is carried out by adding a small quantity of basic solution. The silica sol is impregnated in the fiber. The fiber is aged and solvent-substituted under a polar solvent. The aerogel impregnated fiber reforms the surface and proceeds the ambient drying process.

    Abstract translation: 目的:提供一种高绝缘气凝胶浸渍纤维的制造方法,提供具有低导热性,隔音性能和提高节能效率的气凝胶无纺布/环境干燥型纤维。 构成:高绝缘气凝胶浸渍纤维的制造方法如下。 二氧化硅溶胶混合烷基硅烷和异丙醇,然后通过向混合溶液中加入酸溶液进行水解。 通过加入少量碱性溶液进行硅溶胶的聚合反应。 将硅溶胶浸渍在纤维中。 纤维在极性溶剂下老化并溶剂取代。 气凝胶浸渍纤维改性表面并进行环境干燥过程。

    에피택셜 성장 강자성체-반도체 접합을 이용한 스핀트랜지스터
    12.
    发明公开
    에피택셜 성장 강자성체-반도체 접합을 이용한 스핀트랜지스터 失效
    使用外延FERROMAGNET-SEMICONDUCTOR JUNCTION的旋转晶体管

    公开(公告)号:KR1020090062601A

    公开(公告)日:2009-06-17

    申请号:KR1020070129952

    申请日:2007-12-13

    Abstract: A spin transistor using an epitaxial ferromagnetism-semiconductor junction is provided to reduce the length of a source and a drain by using the epitaxial ferromagnetic source and drain magnetized to a channel direction. A spin transistor includes a semiconductor substrate(110) having a channel layer(107). A ferromagnetism source(121) and a ferromagnetism drain are separately arranged in an upper part of the semiconductor substrate. The ferromagnetism source and drain are epitaxially grown on the semiconductor substrate. The ferromagnetism source and drain are magnetized to the longitudinal direction of the channel layer by the crystallization anisotropy. A gate(150) is arranged between the source and the drain in the upper part of the semiconductor substrate. The gate is insulated from the semiconductor substrate with the SiO2 gate insulating layer. The gate is formed in order to control the spin of the electron passing through the channel layer.

    Abstract translation: 提供使用外延铁磁半导体结的自旋晶体管,通过使用被磁化成沟道方向的外延铁磁源和漏极来减小源极和漏极的长度。 自旋晶体管包括具有沟道层(107)的半导体衬底(110)。 铁氧体源(121)和铁磁性漏极分别布置在半导体衬底的上部。 铁氧体源极和漏极在半导体衬底上外延生长。 铁磁源和漏极通过结晶各向异性被磁化到沟道层的纵向方向。 栅极(150)布置在半导体衬底的上部的源极和漏极之间。 栅极与具有SiO 2栅极绝缘层的半导体衬底绝缘。 形成栅极以控制通过沟道层的电子的自旋。

    바이오필터 및 이를 이용한 바이오필터 시스템
    13.
    发明公开
    바이오필터 및 이를 이용한 바이오필터 시스템 无效
    生物过滤器和生物过滤系统

    公开(公告)号:KR1020020042883A

    公开(公告)日:2002-06-08

    申请号:KR1020000072221

    申请日:2000-12-01

    Abstract: PURPOSE: A parallel biofilter system that is capable of conducting adsorption process and decomposition process simultaneously is provided, which prevents secondary pollution due to saturated adsorbent. CONSTITUTION: The parallel biofilter system that consists of two biofilters comprises a first and a second biofilters(1,2); a first inlet pipe(3) through which polluted air flows into the fist biofilter; a first inlet valve(3-1) on the line of the first inlet pipe; a second inlet pipe(4) through which polluted air flows into second biofilter; a second inlet valve(4-1) on the line of second inlet pipe; a first purification pipe(5) through which purified air flows from the first biofilter into the second biofilter; purification valves(5-1,5-2) on the line of the first purification pipe; a second purification pipe(6) through which purified air flows from the second biofilter into the first biofilter; purification valves(6-1,6-2) on the line of second purification pipe; a first outlet pipe(7) through which air is vented out of the first biofilter; a first outlet valve(7-1) on the line of the first outlet pipe; a second outlet pipe(8) through which air is vented out of the second biofilter; a second outlet valve on the line of second outlet pipe. The biofilter is prepared by mixing activated carbon, compost and sawdust at the ration of 40:10:50 to 25:25:50(v/v/v); inoculating pseudomonas microbe to the above carrier, followed by cultivation at 20-40deg.C for 10-16 hours; packing the above carrier into filter housing and then sealing the filter housing.

    Abstract translation: 目的:提供能够同时进行吸附过程和分解过程的平行生物过滤系统,可防止饱和吸附剂引起的二次污染。 构成:由两个生物过滤器组成的平行生物过滤器系统包括第一和第二生物过滤器(1,2); 污染空气通过其流入第一生物过滤器的第一入口管道(3); 在第一入口管线上的第一入口阀(3-1); 第二入口管(4),污染空气通过其流入第二生物过滤器; 在第二入口管线上的第二入口阀(4-1); 净化空气从第一生物滤池流入第二生物过滤器的第一净化管道(5); 第一净化管线上的净化阀(5-1,5-2); 净化空气通过第二净化管道(6)从第二生物过滤器流入第一生物过滤器; 第二净化管线上的净化阀(6-1,6-2); 第一出口管(7),空气从第一生物过滤器排出; 在第一出口管线上的第一出口阀(7-1); 第二出口管(8),空气从第二生物过滤器排出; 在第二出口管线上的第二出口阀。 生物过滤器通过以40:10:50至25:25:50(v / v / v)的比例混合活性炭,堆肥和锯末来制备; 将假单胞菌接种到上述载体上,然后在20-40℃下培养10-16小时; 将上述载体包装到过滤器壳体中,然后密封过滤器壳体。

    이중 전하 공급층 구조를 이용한 스핀 트랜지스터
    14.
    发明公开
    이중 전하 공급층 구조를 이용한 스핀 트랜지스터 失效
    使用双载波供电层结构的旋转晶体管

    公开(公告)号:KR1020100037683A

    公开(公告)日:2010-04-12

    申请号:KR1020080096896

    申请日:2008-10-02

    CPC classification number: H01L29/66984 H01L29/7785

    Abstract: PURPOSE: A spin transistor with a double charge-supply layer structure is provided to improve the vertical symmetry of electron distribution in an energy band structure and a channel by arraigning a double charge-supply layer for binary electron gas structure channel layer. CONSTITUTION: Cladding layers are respectively arranged in the upper side and the lower side of the binary electron gas structure of a channel layer(1). A semiconductor substrate includes a lower cladding layer(3). Ferromagnetic source and drain which are spaced apart from each other are arranged to the longitudinal direction of the channel layer. A gate voltage is applied to a gate electrode to control the spin of the electron which passes through the channel layer. A first charge-supply layer(4) supplies a carrier to the channel layer. A spin transistor is arranged between the upper cladding layer(3') and the channel layer. The spin transistor includes a second charge-supply layer(4').

    Abstract translation: 目的:提供具有双电荷供应层结构的自旋晶体管,通过对双电子电子气体结构通道层的双电荷供应层进行调整,提高能带结构和通道中电子分布的垂直对称性。 构成:通道层(1)的二元电子气体结构的上侧和下侧分别设置包覆层。 半导体衬底包括下包层(3)。 彼此间隔开的铁磁源和漏极被布置在沟道层的纵向方向上。 栅极电压施加到栅电极以控制通过沟道层的电子的自旋。 第一电荷供给层(4)向沟道层提供载流子。 自由晶体管布置在上包层(3')和沟道层之间。 自旋晶体管包括第二电荷供应层(4')。

    기포를 이용한 미소 전자 기계 구조의 발전장치
    16.
    发明公开
    기포를 이용한 미소 전자 기계 구조의 발전장치 失效
    使用泡沫的MEMS发生器

    公开(公告)号:KR1020030070333A

    公开(公告)日:2003-08-30

    申请号:KR1020020009832

    申请日:2002-02-25

    CPC classification number: H02N2/18

    Abstract: PURPOSE: A generator for a MEMS by using bubbles is provided to be used as power source for the bio-MEMS by generating with using low-temperature heat source without replacing the power source periodically. CONSTITUTION: A generator for a MEMS is composed of a liquid chamber having a lower wall and a side wall and storing liquid; a bubble generating unit generating bubbles in the liquid chamber; an elastic piezoelectric plate(20) placed near the upper part of the bubble generating unit in the liquid chamber, displaced according to contact of bubbles, and composed of a first free end, a second end and a piezoelectric material layer; and a couple of electrodes(22,23) electrically connected to the piezoelectric material layer.

    Abstract translation: 目的:通过使用气泡产生MEMS用于生物MEMS的电源,通过使用低温热源生成而不用周期性地更换电源。 构成:用于MEMS的发生器由具有下壁和侧壁并储存液体的液体室组成; 气泡生成单元,其在所述液体室中产生气泡; 弹性压电板(20),其位于所述液体室内的所述气泡发生单元的上部附近,根据气泡的接触位移,并由第一自由端,第二端和压电材料层构成; 和电连接到压电材料层的一对电极(22,23)。

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