Abstract:
인터포저는 반도체 기판, 절연층, 복수의 금속 배선들 및 수동 이퀄라이저를 포함한다. 절연층은 반도체 기판의 상면에 형성된다. 복수의 금속 배선들은 절연층 상의 제1 영역에 형성되고, 서로 이격하도록 배열되며, 신호 전달 라인 및 복수의 접지 라인들을 구비한다. 수동 이퀄라이저는 절연층 상의 제2 영역에 형성되고, 제1 방향으로 연장된 접합 패턴 및 접합 패턴으로부터 제1 방향에 직교하는 제2 방향으로 연장된 복수의 핑거 패턴들을 구비한다. 복수의 핑거 패턴들 중 제1 핑거 패턴은 신호 전달 라인과 전기적으로 연결되고 제2 핑거 패턴들은 각각 복수의 접지 라인들 중 하나와 전기적으로 연결된다.
Abstract:
PURPOSE: An interposer with a passive equalizer, a manufacturing method thereof, a stacked chip package including the interposer, and a manufacturing method thereof are provided to improve signal transmission characteristics without increasing manufacturing costs and/or a size by increasing a resistance value and inductance and reducing capacitance. CONSTITUTION: An insulating layer (120) is formed on the upper surface of a semiconductor substrate. Multiple metal wires (150a-150f) are separately formed on a first area of the insulating layer and include a signal transmission line and multiple ground lines. A passive equalizer (170) includes a junction pattern extended in a first direction and multiple finger patterns (174,176,178) extended in a second direction perpendicular to the first direction from the junction pattern. A first finger pattern among the multiple finger patterns is electrically connected to the signal transmission line. Second finger patterns are electrically connected to the multiple ground lines, respectively. [Reference numerals] (AA) First direction; (BB) Second direction
Abstract:
PURPOSE: An interposer including a passive equalizer using a through silicon via, a manufacturing method thereof, a stacked chip package including the same, and a method for manufacturing the stacked chip package are provided to improve signal transmission properties without increasing a size or manufacturing costs. CONSTITUTION: A first insulation layer (120) is formed on the front side of a semiconductor substrate (110). A second insulation layer (130) is formed on the rear side of the semiconductor substrate. A plurality of through silicon vias (144,146,148) pass through the semiconductor substrate, the first insulation layer, and the second insulation layer. A plurality of metal wires include a signal transmission line (150a) to transmit an electric signal and a plurality of ground lines (150b-150f) to transmit a ground voltage. A rear metal pattern (170) includes a junction pattern (172) and a plurality of finger patterns (174,176,178). [Reference numerals] (AA) Second direction; (BB) First direction