Abstract:
PURPOSE: A method for manufacturing an organic FET(Field Effect Transistor) is provided to improve the mobility of electric charge by indirectly carrying out a plasma treatment under vacuum after the deposition process for an organic semiconductor layer. CONSTITUTION: A gate electrode(2) is formed on a substrate(1). A gate isolating layer(3) is formed on the entire surface of the resultant structure. A source and a drain(4,5) are formed on both edge portion of the gate isolating layer. A self-assembled monolayer(6) is formed between the source and drain on the gate isolating layer. An organic semiconductor layer(7) is formed on the self-assembled monolayer. A plasma treatment is indirectly carried out on the resultant structure under vacuum by using a switching shutter for diffusing the impurities of the organic semiconductor layer to the outside.
Abstract:
PURPOSE: An organic electroluminescence device is provided to be capable of realizing a high efficiency by making holes injected from an anode electrode easily. CONSTITUTION: An anode electrode(110) is formed on a substrate(100), and a cathode electrode(180) is opposite to the anode electrode. A luminescence layer(150) is interposed between the anode electrode and the cathode electrode. A hole injection layer(120) and a hole transport layer(130) are sequentially interposed between the anode electrode and the luminescence layer. An electron transport layer(160) and an electron injection layer(170) are sequentially interposed between the luminescence layer and the cathode layer. A buffer layer(140) is interposed between the luminescence layer and the hole transport layer and makes holes smoothly flow from the hole transport layer to the luminescence layer.
Abstract:
Provided are spirobifluorene compounds which can provide excellent processibility with improved solubility in organic solvents, an electroluminescence (EL) polymer obtained therefrom and an EL element having the same. The EL polymer comprising repeating units of the following formula: wherein R 1 and R 2 are identical or different and are independently a straight-chain or branched alkyl group having from 1 to 22 carbon atoms or an aryl group substituted by C 1 -C 22 alkyl, and at least one of the R 1 and R 2 contains one or more atoms selected from the group consisting of O, N, S, Si and Ge.
Abstract translation:提供了螺二芴化合物,其可提供优异的可加工性和改善的在有机溶剂中的溶解性,由其获得的电致发光(EL)聚合物和具有该化合物的EL元件。 包含下式的重复单元的EL聚合物:其中R SUB 1 SUB和R SUB 2 SUB是相同或不同的并且独立地是直链或支链烷基,其具有 1至22个碳原子的芳基或被C 1 -C 1烷基取代的芳基以及至少一个R SUB 1 1 SUB和C 1 -C 22烷基, R SUB 2 SUB包含一个或多个选自O,N,S,Si和Ge的原子。
Abstract:
Provided are compounds having molecular components capable of transporting/injecting hole and an organic EL device having a self-assembled monolayer comprising the same. The compound has the following formula:wherein Ar is a functional group having hole transporting or injecting capability, R is a C1 to C22 alkyl group, and X is an alkoxy group or halogen.
Abstract:
PURPOSE: An organic electro-luminescence display panel and a method for fabricating the same are provided to obtain a desired patterned insulating layer without breaking an overhang structure of a photoresist for patterning the insulating layer and reduce leakage current between the first and the second electrodes or pixels by arranging a target of a sputtering gun and a patterned substrate to a vertical direction. CONSTITUTION: The first electrode(5) is formed on a substrate(1). The substrate(1) is formed with a high polymer plastic. An insulating layer(2) is formed on an edge of the first electrode(5) and the substrate(1) without the first electrode(5). An organic light emission layer(3) is formed on the insulating layer(2). The second electrode(4) is formed on the organic light emission layer(3). Namely, the organic light emission layer(3) is formed between the first electrode(5) and the second electrode(4).
Abstract:
PURPOSE: An organic electro-luminescence display panel and a method for fabricating the same are provided to obtain a desired patterned insulating layer without breaking an overhang structure of a photoresist for patterning the insulating layer and reduce leakage current between the first and the second electrodes or pixels by arranging a target of a sputtering gun and a patterned substrate to a vertical direction. CONSTITUTION: The first electrode(5) is formed on a substrate(1). The substrate(1) is formed with a high polymer plastic. An insulating layer(2) is formed on an edge of the first electrode(5) and the substrate(1) without the first electrode(5). An organic light emission layer(3) is formed on the insulating layer(2). The second electrode(4) is formed on the organic light emission layer(3). Namely, the organic light emission layer(3) is formed between the first electrode(5) and the second electrode(4).
Abstract:
PURPOSE: An organic ELD(ElectroLuminescence Device) is provided to be capable of enhancing the efficiency in low voltage by increasing the charge implantation efficiency of a cathode. CONSTITUTION: An anode(22), a hole carrier layer(23), and electron carrier layer(24) and a multi-layered cathode are sequentially stacked on a glass substrate(21). The cathode consists of the first metal layer(25a), a non-conductor layer(25b) and the second metal layer(25c). The first metal layer(25a) has a thickness so that hot electrons can pass through without losing their energies. The non-conductor layer(25b) is formed on the first metal layer, and has a thickness so that electrons can pass through. The second metal layer(25c) is formed on the non-conductor layer(25b).
Abstract:
PURPOSE: A field effect transistor and a pixel driving circuit of an active display is to lower a driving voltage of a field effect transistor and raise a movement and a field effect of a charge conveyor in a semiconductor layer. CONSTITUTION: A ferroelectric(32) is deposited on a gate(31). An organic semiconductor layer(33) and a source/drain(34) are formed on the ferroelectric. The organic semiconductor uses a simple molecular organic, a polymer and so forth. The ferroelectric consists of a PZT(Pb(Zr, Ti)O3) and so forth, and has a dielectric rate of 1000 to 1500 at a thin film state. A pixel driving circuit of an active drive type display comprises a storage battery, a luminescence element, the first FET for controlling the storage battery, and the second FET for controlling a current flowing into the luminescence element. The first field effect transistor consists of the gate, the ferroelectric formed on the gate, the organic semiconductor formed on the ferroelectric, and the source/drain.
Abstract:
본 발명에 2차원 배열 안테나를 이용한 매립물 탐지 장치 및 송수신 분석 모듈에 관한 것으로, 2차원 배열 안테나를 이용한 매립물 탐지 장치는 기판 상에 m행 n열(m, n은 1이상의 정수)로 2차원 배열된 다수의 단위 안테나; 하나 이상의 상기 단위 안테나 중에서 선택된 송신 안테나를 통하여 펄스 신호를 구조물내의 매립물로 입사시키도록 하는 제1스위치; 및 하나 이상의 상기 단위 안테나를 중에서 선택된 수신 안테나를 통하여 수신되는 반사 신호를 전달받고, 상기 반사 신호를 상기 매립물의 위치와 형상 정보를 분석하는 송수신 분석 모듈로 전달하는 제2스위치를 포함하여 구성된다.
Abstract:
본 발명에 2차원 배열 안테나를 이용한 매립물 탐지 장치 및 송수신 분석 모듈에 관한 것으로, 2차원 배열 안테나를 이용한 매립물 탐지 장치는 기판 상에 m행 n열(m, n은 1이상의 정수)로 2차원 배열된 다수의 단위 안테나; 하나 이상의 상기 단위 안테나 중에서 선택된 송신 안테나를 통하여 펄스 신호를 구조물내의 매립물로 입사시키도록 하는 제1스위치; 및 하나 이상의 상기 단위 안테나를 중에서 선택된 수신 안테나를 통하여 수신되는 반사 신호를 전달받고, 상기 반사 신호를 상기 매립물의 위치와 형상 정보를 분석하는 송수신 분석 모듈로 전달하는 제2스위치를 포함하여 구성된다.