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    METHODS OF TEXTURING SURFACES FOR CONTROLLED REFLECTION
    11.
    发明申请
    METHODS OF TEXTURING SURFACES FOR CONTROLLED REFLECTION 审中-公开
    用于控制反射的纹理表面的方法

    公开(公告)号：WO2011056948A2

    公开(公告)日：2011-05-12

    申请号：PCT/US2010055418

    申请日：2010-11-04

    Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  KORZENSKI MICHAEL B ,  JIANG PING ,  DUBOIS LAWRENCE H

    Inventor： CHEN TIANNIU ,  KORZENSKI MICHAEL B ,  JIANG PING ,  DUBOIS LAWRENCE H

    IPC: H01L31/042 ,  H01L31/0236

    CPC classification number: H01L31/02363 ,  Y02E10/50

    Abstract: Novel methods for the texturing of photovoltaic cells is described, wherein texturing minimizes reflectance losses and hence increases solar cell efficiency. In one aspect, a microstamp with the mirror inverse of the optimum surface structure is described. The photovoltaic cell substrate to be etched and the microstamp are immersed in a bath and pressed together to yield the optimum surface structure. In another aspect, nanoscale structures are introduced to the surface of a photovoltaic cell by depositing nanoparticles or introducing metal induced pitting to a substrate surface. In still another aspect, remote plasma source (RPS) or reactive ion etching (RIE), is used to etch nanoscale features into a silicon-containing substrate.

    Abstract translation: 描述了用于光伏电池纹理化的新方法，其中纹理使反射损失最小化并因此增加太阳能电池效率。 在一个方面，描述了具有最佳表面结构的反射镜的微型电阻。 要蚀刻的光伏电池基板和微型电极浸入浴中并压在一起以产生最佳的表面结构。 在另一方面，通过沉积纳米颗粒或将金属诱导的点蚀引入到衬底表面，将纳米尺度结构引入光伏电池的表面。 在另一方面，使用远程等离子体源（RPS）或反应离子蚀刻（RIE）将纳米尺度特征蚀刻到含硅衬底中。

    FORMULATIONS FOR CLEANING MEMORY DEVICE STRUCTURES
    12.
    发明申请
    FORMULATIONS FOR CLEANING MEMORY DEVICE STRUCTURES 审中-公开
    清洁存储设备结构的配方

    公开(公告)号：WO2008058173A3

    公开(公告)日：2008-08-07

    申请号：PCT/US2007083891

    申请日：2007-11-07

    Applicant: ADVANCED TECH MATERIALS ,  VISINTIN PAMELA M ,  KORZENSKI MICHAEL B

    Inventor： VISINTIN PAMELA M ,  KORZENSKI MICHAEL B

    IPC: C11D1/00 ,  C11D3/37

    CPC classification number: C11D11/0047 ,  C11D3/0073 ,  C11D3/02 ,  C11D3/042 ,  C11D3/046 ,  C11D3/06 ,  C11D3/08 ,  C11D3/28 ,  C11D3/30 ,  C11D3/43 ,  C11D7/08 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/5004 ,  H01L21/02074 ,  H01L21/02101 ,  H01L21/31111 ,  H01L27/10844

    Abstract: A removal composition and process for removing silicon-containing layers from a microelectronic device having said layers thereon. The removal composition selectively removes layers including, but not limited to, silicon oxide, plasma enhanced tetraethyl orthosilicate (P-TEOS), borophosphosilicate glass (BPSG), plasma enhanced oxide (PEOX), high density plasma oxide (HDP), phosphosilicate glass (PSG), spin-on-dielectrics (SOD), thermal oxide, updoped silicate glass, sacrificial oxides, silicon-containing organic polymers, silicon-containing hybrid organic/inorganic materials, organosilicate glass (OSG), TEOS, fluorinated silicate glass (FSG), hemispherical grain (HSQ), carbon-doped oxide (CDO) glass, and combinations thereof, relative to lower electrode, device substrate, and/or etch stop layer materials.

    Abstract translation: 一种去除组合物和从其上具有所述层的微电子器件去除含硅层的方法。 （P-TEOS），硼磷硅酸盐玻璃（BPSG），等离子体增强氧化物（PEOX），高密度等离子体氧化物（HDP），磷硅酸盐玻璃（磷硅酸盐玻璃）等（但不限于此） PSG），旋转电介质（SOD），热氧化物，上覆硅酸盐玻璃，牺牲氧化物，含硅有机聚合物，含硅杂化有机/无机材料，有机硅酸盐玻璃（OSG），TEOS，氟化硅酸盐玻璃 ），半球形晶粒（HSQ），碳掺杂氧化物（CDO）玻璃及其组合，相对于下电极，器件衬底和/或蚀刻停止层材料。

    ENVIRONMENTALLY FRIENDLY POLYMER STRIPPING COMPOSITIONS
    18.
    发明申请
    ENVIRONMENTALLY FRIENDLY POLYMER STRIPPING COMPOSITIONS 审中-公开
    环境友好型聚合物剥离组合物

    公开(公告)号：WO2010017160A2

    公开(公告)日：2010-02-11

    申请号：PCT/US2009052641

    申请日：2009-08-04

    Applicant: ADVANCED TECH MATERIALS ,  ATMI TAIWAN CO LTD ,  KORZENSKI MICHAEL B ,  TANG LILLIAN CHING-HSUAN ,  HSU ROBERT MING-ANN

    Inventor： KORZENSKI MICHAEL B ,  TANG LILLIAN CHING-HSUAN ,  HSU ROBERT MING-ANN

    IPC: G03F7/30 ,  G03F7/42 ,  H01L21/027

    CPC classification number: G03F7/422 ,  H01L21/31133

    Abstract: Non-aqueous and semi-aqueous removal compositions for removing resist and/or other materials from microelectronic devices. The non-aqueous removal composition includes tetrahydrofurfuryl alcohol and at least one dibasic ester. The semi-aqueous removal composition includes tetrahydrofurfuryl alcohol, at least one dibasic ester, at least one corrosion inhibitor, and no more than 30 wt% water. The removal compositions effectively removes resist and/or other materials while not damaging the underlying low-k dielectric or metallic materials.

    Abstract translation: 用于从微电子器件去除抗蚀剂和/或其他材料的非水和半水相去除组合物。 非水性去除组合物包含四氢糠醇和至少一种二元酯。 该半水性去除组合物包含四氢糠醇，至少一种二元酯，至少一种腐蚀抑制剂和不超过30重量％的水。 去除组合物有效去除抗蚀剂和/或其他材料，同时不损坏下面的低k电介质或金属材料。

    FORMULATIONS FOR REMOVING COPPER-CONTAINING POST-ETCH RESIDUE FROM MICROELECTRONIC DEVICES
    19.
    发明申请
    FORMULATIONS FOR REMOVING COPPER-CONTAINING POST-ETCH RESIDUE FROM MICROELECTRONIC DEVICES 审中-公开
    用于从微电子设备中去除含铜复合后残留物的配方

    公开(公告)号：WO2007120259A3

    公开(公告)日：2008-01-17

    申请号：PCT/US2006060582

    申请日：2006-11-07

    Applicant: ADVANCED TECH MATERIALS ,  VISINTIN PAMELA M ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H

    Inventor： VISINTIN PAMELA M ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H

    IPC: B01D53/04

    CPC classification number: C11D11/0047 ,  C11D3/0073 ,  H01L21/02063

    Abstract: A method and composition for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes a diluent, a solvent and a copper corrosion inhibitor, wherein the diluent may be a dense fluid or a liquid solvent. The removal compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.

    Abstract translation: 描述了用于从图案化的微电子器件去除含铜的后蚀刻和/或后灰渣的方法和组合物。 除去组合物包括稀释剂，溶剂和铜缓蚀剂，其中稀释剂可以是致密流体或液体溶剂。 去除组合物有效地从微电子器件去除含铜的蚀刻后残留物，而不损害暴露的低k电介质和金属互连材料。

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