-
公开(公告)号：CA2221378A1
公开(公告)日：1996-12-05
申请号：CA2221378
申请日：1996-05-31
Applicant: POTTER MICHAEL D , ADVANCED VISION TECH INC
Inventor： POTTER MICHAEL D
Abstract: A lateral field-emission device (10) has a lateral emitter (100) substantially parallel to a substrate (20) and has a simplified anode structure (70). The anode's top surface is precisely spaced apart from the plane of the lateral emitter and receives electrons emitted by field emission from the edge of the lateral emitter cathode, when a suitable bias voltage is applied. The device may be configured as a diode, or as a triode, tetrode, etc. having control electrodes (140) positioned to allow control of current from the emitter to the anode by an electrical signal applied to the control electrode.
-
公开(公告)号：CA2345629A1
公开(公告)日：2001-02-01
申请号：CA2345629
申请日：2000-07-25
Applicant: ADVANCED VISION TECH INC
Inventor： POTTER MICHAEL D
Abstract: An ultra-high-frequency vacuum-channel field-effect microelectronic device (VFED or IGVFED) has a lateral field-emission source (60), a drain (150), an d one or more insulated gates (40, 160). The insulated gate(s) are preferably disposed to extend in overlapping alignment with the emitting edge (85) of t he lateral field-emission source and with a portion of the vacuum-channel regio n (120). If the gate(s) are omitted, the device performs as an ultra-high spee d diode. A preferred fabrication process for the device uses a sacrificial material temporarily deposited in a trench for the vacuum-channel region whi ch is covered with an insulating cover. An access hole in the cover allows removal of the sacrificial material. As part of a preferred fabrication process, the drain preferably acts also as a sealing plug, plugging the acce ss hole and sealing the vacuum-channel region after the vacuum-channel region i s evacuated.
-
公开(公告)号：AU1818799A
公开(公告)日：1999-07-05
申请号：AU1818799
申请日：1998-12-11
Applicant: ADVANCED VISION TECH INC
Inventor： POTTER MICHAEL D
IPC: H01J9/39 , H01J1/304 , H01J7/18 , H01J9/02 , H01J29/94 , H01J1/02 , H01J1/16 , H01J19/10 , H01J1/62 , H01J63/04 , H01J17/24 , H01J19/70 , H01J61/26
Abstract: A self-gettering electron field emitter (30) has a first portion (40) formed of a low-work-function material for emitting electrons, and it has an integral second portion (50) that acts both as a low-resistance electrical conductor and as a gettering surface. The self-geterring emitter (30) is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance geterring material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-geterring emitter (30) is particularly suitable for use in lateral field emission devices (10). The preferred emitter structure has a tapered edge (60), with a salient portion (45) of the low-work-function material extending a small distance beyond an edge (55) of the gettering and low resistance material. A fabrication process (S1-S6) is specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices.
-
公开(公告)号：AU5962896A
公开(公告)日：1996-12-18
申请号：AU5962896
申请日：1996-05-31
Applicant: ADVANCED VISION TECH INC
Inventor： POTTER MICHAEL D
Abstract: A lateral field-emission device (10) has a lateral emitter (100) substantially parallel to a substrate (20) and has a simplified anode structure (70). The anode's top surface is precisely spaced apart from the plane of the lateral emitter and receives electrons emitted by field emission from the edge of the lateral emitter cathode, when a suitable bias voltage is applied. The device may be configured as a diode, or as a triode, tetrode, etc. having control electrodes (140) positioned to allow control of current from the emitter to the anode by an electrical signal applied to the control electrode.
-
公开(公告)号：CA2221443A1
公开(公告)日：1996-12-05
申请号：CA2221443
申请日：1996-05-31
Applicant: ADVANCED VISION TECH INC , POTTER MICHAEL D
Inventor： POTTER MICHAEL D
Abstract: A process for fabricating, in a planar substrate, a hermetically sealed cham ber for a field-emission cell or the like, allows operat ing the device in a vacuum or a low pressure inert gas. The process includes methods of covering an opening (160), enclosing the vacuum or g as, and methods of including an optional quantity of gettering material. An exam ple of a device using such a hermetically sealed chamber is a lateral-emitter field-emission device (10) having a lateral emitter (100) pa rallel to a substrate (20) and having a simplified anode structure (70). In one simple embodiment, a control electrode (140) is positioned in a plane above the emitter edge (110) and automatically al igned to that edge. The simplified devices are specially adapted for field emission d isplay arrays. An overall fabrication process uses steps (S1-S18) to produce the devices and arrays. Various embodiments of the fabrication pr ocess allow the use of conductive or insulating substrat es (20), allow fabrication of devices having various functions and complexity, and allow covering a trench opening (160) etched through the emitter and insulator, thus enclosing the hermetically sealed chamber.
-
Patent Agency Ranking
公开(公告)号：AU2661399A
公开(公告)日：1999-08-23
申请号：AU2661399
申请日：1999-02-06
Applicant: ADVANCED VISION TECH INC
Inventor： POTTER MICHAEL D
Abstract: A lateral-emitter field emission device (10) has a gate (60) that is separated by an insulating layer (80) from a vaccum- or gas-filled microchamber environment (20) containing other elements of the device (10). For example, the gate (60) may be disposed external to the microchamber (20). The insulating layer (80) is disposed such that there is no vaccum- or gas-filled path to the gate for electrons that are emitted from a lateral emitter (40, 100). The insulating layer (70, 80) disposed between the emitter and the gate preferably comprises a material having a dielectric constant greater than one. The insulating layer also preferably has a low secondary electron yield over the device's operative range of electron energies. For display applications, the insulating layer is preferably transparent. Emitted electrons are confined to the microchamber (20) containing their emitter (100). Thus, the gate current component of the emitter current consists of displacement current only. This displacement current is a result of any change in potential of the gate relative to other elements such as, for example, relative to the emitter. Direct electron current from the emitter to the gate is prevented. An array of the devices comprises an array of microchambers, so that electron current from each emitter (100) can reach only the anode (50, 55) in the same microchamber, even for diode devices lacking a gate electrode (60). A fabrication process (S1-S28) is specially adapted for fabricating the device and arrays of such devices.
-
公开(公告)号：CA2239288A1
公开(公告)日：1998-03-12
申请号：CA2239288
申请日：1997-08-30
Applicant: POTTER MICHAEL D , ADVANCED VISION TECH INC
Inventor： POTTER MICHAEL D
Abstract: Phosphor compositions are prepared by treating metal oxides or mixed-metal oxides with refractory metals to form cathodoluminescent phosphors stimulatable by electrons of very low energy. The phosphors comprise 90 % to 100 % of a mixed metal oxide MxTyOz (where M is a metal selected from Zn, Sn, In, Cu, and combinations thereof; T is a refractory metal selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and combinations thereof; and O is Oxygen, x, y, and z being chosen such that z is at most stoichiometric for MxTyOz) and 0 % to 10 % of a dopant comprising a substance selected from a rare earth element of the lanthanide series, Mn, Cr, and combinations thereof, or stoichiometrically excess Zn, Cu, Sn, or In. A blue-light-emitting phosphor based on ZnO treated with Ta2O5 or Ta to form Ta2Zn3O8 is characterized by CIE 1931 chromaticity values x and y, where x is between about 0.14 and 0.20 and y is between about 0.05 and 0.15. In preferred embodiments, a process is specially adapted for forming the phosphor in an electrically-conductive thinfilm or surface-layer form in situ during fabrication of displays. A preferred in situ process has an integrated etch stop, which precisely defines the depth of an opening in a field-emission display structure utilizing the low-energy-electron excited phosphor. A field-emission display comprises cells, each having a field-emission cathode and an anode comprising at least one cathodoluminescent phosphor. Arrangements of various color phosphors may be made by selective deposition of suitable dopants. The display cell structures may also have gate elements for controlling electron current flowing to the anode and its phosphor when suitable voltages are applied.
-
公开(公告)号：AU7480796A
公开(公告)日：1997-05-22
申请号：AU7480796
申请日：1996-10-28
Applicant: ADVANCED VISION TECH INC
Inventor： POTTER MICHAEL D
-
公开(公告)号：AU6346496A
公开(公告)日：1997-02-05
申请号：AU6346496
申请日：1996-07-03
Applicant: ADVANCED VISION TECH INC , MICHAEL D POTTER
Inventor： POTTER MICHAEL D
-
公开(公告)号：AU5961796A
公开(公告)日：1996-12-18
申请号：AU5961796
申请日：1996-05-31
Applicant: ADVANCED VISION TECH INC , POTTER MICHAEL D
Inventor： POTTER MICHAEL D
Abstract: A field emission device (10) is made with a lateral emitter (100) substantially parallel to a substrate (20) and with a simplified anode stucture (70). The lateral-emitter field-emission device has a thin-film emitter cathode (100) which has a thickness not exceeding several hundred angstroms and has an emitting blade edge or tip (110) having a small radius of curvature. The anode's top surface is precisely spaced apart from and below the plane of the lateral emitter and receives electrons emitted by field emission from the blade edge or tip of the lateral-emitter cathode, when a suitable bias voltage is applied. A fabrication process is disclosed using process steps (S1-S18) similar to those of semiconductor integrated circuit fabrication to produce the novel devices and their arrays. Various embodiments of the fabrication process allow the use of conductive or insulating substrates (20) and allow fabrication of devices having various functions and complexity. The anode (70) is simply fabricated, without the use of prior-art processes which formed a spacer made by a conformal coating. In a preferred fabrication process for the simplified anode device, the following steps are performed: an anode film (70) is deposited; an insulator film (90) is deposited over the anode film; an ultra-thin conductive emitter film (100) is deposited over the insulator and patterned; a trench opening (160) is etched through the emitter and insulator, stopping at the anode film, thus forming and automatically aligning an emitting edge of the emitter; and means are provided for applying an electrical bias to the emitter and anode, sufficient to cause field emission of electrons from the emitting edge of the emitter to the anode. The anode film may comprise a phosphor (75) for a device specially adapted for use in a field emission display. The fabrication process may also include steps to deposit additional insulator films (130) and to deposit additional conductive films for control electrodes (140), which are automatically aligned with the emitter blade edge or tip (110).
-
-
-
-
-
-
-
-
-
Search Results
24
records
(took 0.025 seconds)
