Field emission display cell structure and fabrication proces s

    公开(公告)号:AU5727496A

    公开(公告)日:1996-11-29

    申请号:AU5727496

    申请日:1996-05-06

    Inventor: POTTER MICHAEL D

    Abstract: A lateral-emitter field-emission device includes a thin-film emitter cathode (50) of thickness less than several hundred angstrom and has an edge or tip (110) with small radius of curvature. In the display cell structure, a cathodoluminescent phosphor anode (60), allowing a large portion of the phosphor anode's top surface to emit light in a desired direction. An anode contact layer contacts the phosphor anode (60) from below to form a buried anode contact (90) which does not interfere with light emission. The anode phosphor is precisely spaced apart form the cathode edge or tip and receives electrons emitted by the field emission from the edge or tip of the lateral-emitter cathode, when a small bias voltage is applied. The device may be configured as diode, triode, or tetrode, etc. having one or more control electrodes (140) and/or (170) positioned to allow control of current from the emitter to the phosphor anode by an electrical signal applied to the control electrode.

    SURFACE ELECTRON DISPLAY DEVICE AND FABRICATION PROCESS
    6.
    发明申请
    SURFACE ELECTRON DISPLAY DEVICE AND FABRICATION PROCESS 审中-公开
    表面电子显示器件和制造工艺

    公开(公告)号:WO9832145A3

    公开(公告)日:1998-11-19

    申请号:PCT/US9723718

    申请日:1997-12-30

    Inventor: POTTER MICHAEL D

    CPC classification number: H01J3/022 H01J9/025

    Abstract: A device useful as a display element has an electron emitter (40) and an anode (30) disposed to receive electrons emitted from the emitter. The anode has surface portions differing in resistivity, providing an electron sink portion (80) at the surface portion of lowest resistivity. A preferred embodiment has a lateral field-emission electron emitter (10) and has an anode formed by processes specially adapted to provide anode portions of differing resistivity, including the electron sink portion (80). The electron sink portion is preferably disposed at a position laterally spaced apart from the emitting tip of the device's electron emitter. In a particularly preferred fabrication process, the anode is formed by depositing a base layer, depositing and patterning an etch-stop layer (75) with an opening to define the electron-sink portion, forming an opening by etching overlying layers down to the etch-stop layer, and heating the base layer and etch-stop layer to form an anode surface that includes both an integral electron-sink portion and a cathodeluminescent phosphor (35) for emitting light. The fabrication process provides for fabricating a plurality of display element devices to make a flat panel display.

    Surface electron display device and fabrication process

    公开(公告)号:AU5805298A

    公开(公告)日:1998-08-07

    申请号:AU5805298

    申请日:1997-12-30

    Inventor: POTTER MICHAEL D

    Abstract: A device useful as a display element has an electron emitter and an anode disposed to receive electrons emitted from the emitter. The anode has surface portions differing in resistivity, providing an electron sink portion at the surface portion of lowest resistivity. A preferred embodiment has a lateral field-emission electron emitter and has an anode formed by processes specially adapted to provide anode portions of differing resistivity, including the electron sink portion. The electron sink portion is preferably disposed at a position laterally spaced apart from the emitting tip of the device's electron emitter. In a particularly preferred fabrication process, the anode is formed by depositing a base layer, depositing and patterning an etch-stop layer with an opening to define the electron-sink portion, forming an opening by etching overlying layers down to the etch-stop layer, and heating the base layer and etch-stop layer to form an anode surface that includes both an integral electron-sink portion and a cathodoluminescent phosphor for emitting light. The fabrication process provides for fabricating a plurality of display element devices to make a flat panel display.

    SURFACE ELECTRON DISPLAY DEVICE AND FABRICATION PROCESS

    公开(公告)号:CA2274664A1

    公开(公告)日:1998-07-23

    申请号:CA2274664

    申请日:1997-12-30

    Inventor: POTTER MICHAEL D

    Abstract: A device useful as a display element has an electron emitter (40) and an anode (30) disposed to receive electrons emitted from the emitter. The anode has surface portions differing in resistivity, providing an electron sink portion (80) at the surface portion of lowest resistivity. A preferred embodiment has a lateral field-emission electron emitter (10) and has an anode formed by processes specially adapted to provide anode portions of differing resistivity, including the electron sink portion (80). The electron sink portion is preferably disposed at a position laterally spaced apart from the emitting tip of the device's electron emitter. In a particularly preferred fabrication process, the anode is formed by depositing a base layer, depositing and patterning an etch-stop layer (75) with an opening to define the electron-sink portion, forming an opening by etching overlying layers down to the etch-stop layer, and heating the base layer and etch-stop layer to form an anode surface that includes both an integral electron-sink portion and a cathodeluminescent phosphor (35) for emitting light. The fabrication process provides for fabricating a plurality of display element devices to make a flat panel display.

    FABRICATION PROCESS FOR HERMETICALLY SEALED CHAMBER IN SUBSTRATE
    10.
    发明公开
    FABRICATION PROCESS FOR HERMETICALLY SEALED CHAMBER IN SUBSTRATE 失效
    一种用于生产密闭室在衬底

    公开(公告)号:EP0829094A4

    公开(公告)日:1998-06-17

    申请号:EP96916893

    申请日:1996-05-31

    Inventor: POTTER MICHAEL D

    CPC classification number: H01J9/025 H01J3/022 H01J2201/30423 H01J2209/385

    Abstract: A process for fabricating, in a planar substrate, a hermetically sealed chamber for a field-emission cell or the like, allows operating the device in a vacuum or a low pressure inert gas. The process includes methods of covering an opening (160), enclosing the vacuum or gas, and methods of including an optional quantity of gettering material. An example of a device using such a hermetically sealed chamber is a lateral-emitter field-emission device (10) having a lateral emitter (100) parallel to a substrate (20) and having a simplified anode structure (70). In one simple embodiment, a control electrode (140) is positioned in a plane above the emitter edge (110) and automatically aligned to that edge. The simplified devices are specially adapted for field emission display arrays. An overall fabrication process uses steps (S1-S18) to produce the devices and arrays. Various embodiments of the fabrication process allow the use of conductive or insulating substrates (20), allow fabrication of devices having various functions and complexity, and allow covering a trench opening (160) etched through the emitter and insulator, thus enclosing the hermetically sealed chamber.

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