公开(公告)号：US12205820B2

公开(公告)日：2025-01-21

申请号：US17808741

申请日：2022-06-24

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma

IPC: H01L21/285 ,  B05D1/00 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

公开(公告)号：US12170197B2

公开(公告)日：2024-12-17

申请号：US17388773

申请日：2021-07-29

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Delphine Longrie ,  Hidemi Suemori ,  Jan Willem Maes ,  Marko Tuominen ,  Shaoren Deng ,  Ivo Johannes Raaijmakers ,  Andrea Illiberi

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/32 ,  H01L21/321 ,  H01L21/56 ,  H01L21/67 ,  H01L21/768 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

公开(公告)号：US20210175092A1

公开(公告)日：2021-06-10

申请号：US17130902

申请日：2020-12-22

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  C23C16/56 ,  H01L21/033 ,  H01L21/02 ,  C23C16/455 ,  H01L21/32 ,  H01L21/3213 ,  C23C16/04 ,  H01L21/768

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US10854460B2

公开(公告)日：2020-12-01

申请号：US16504861

申请日：2019-07-08

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3065 ,  C23C16/04 ,  B05D1/00 ,  C23C16/455 ,  C23C16/56

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

公开(公告)号：US10559458B1

公开(公告)日：2020-02-11

申请号：US16200100

申请日：2018-11-26

Applicant: ASM IP Holding B.V.

Inventor： Hidemi Suemori ,  Hiroo Sekiguchi ,  Takashi Yoshida

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/30

Abstract: A method of forming a nitrogen-incorporated silicon or metal oxide film, includes (i) depositing by a plasma a silicon or metal oxide film on a substrate using a precursor containing a silicon or metal and an oxidizing gas, said plasma having a first plasma density; and (ii) nitriding by a plasma the silicon or metal oxide film using a nitriding gas without using any precursor, said plasma having a second plasma density which is higher than the first plasma density.

公开(公告)号：US10546744B2

公开(公告)日：2020-01-28

申请号：US16268260

申请日：2019-02-05

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28 ,  H01L21/033

Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US10460928B2

公开(公告)日：2019-10-29

申请号：US15996062

申请日：2018-06-01

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28 ,  H01L21/033

Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US20180151345A1

公开(公告)日：2018-05-31

申请号：US15364024

申请日：2016-11-29

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C14/08 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/042 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/3105 ,  H01L21/32

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US20250037995A1

公开(公告)日：2025-01-30

申请号：US18914767

申请日：2024-10-14

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US12154785B2

公开(公告)日：2024-11-26

申请号：US17814161

申请日：2022-07-21

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.