公开(公告)号：US20150240359A1

公开(公告)日：2015-08-27

申请号：US14188760

申请日：2014-02-25

Applicant: ASM IP Holding B.V.

Inventor： Lucian C. Jdira ,  Herbert Terhorst ,  Michael Halpin ,  Carl White ,  Todd Robert Dunn ,  Eric Shero ,  Melvin Verbass ,  Christopher Wuester ,  Kyle Fondurulia

IPC: C23C16/455 ,  H01L21/02

Abstract: A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

Abstract translation: 用于晶片处理反应器的气体入口系统包括适于连接到晶片处理反应器的气体入口的管状气体歧管管道; 以及包括用于将第一气体输送到管状气体歧管导管中的第一进料和用于将第二气体供给到管状气体歧管导管中的第二进料的气体进料。 每个进料具有在管状气体歧管导管的第一轴向位置处连接到管状气体歧管导管的两个或更多个喷射端口，并且每个气体进料的喷射端口沿管状气体歧管导管的圆周均匀分布 第一个轴向位置。

公开(公告)号：US20240420971A1

公开(公告)日：2024-12-19

申请号：US18741168

申请日：2024-06-12

Applicant: ASM IP Holding B.V.

Inventor： Subir Parui ,  Kelly Houben ,  Theodorus Oosterlaken ,  Herbert Terhorst ,  Bert Jongbloed

IPC: H01L21/67 ,  H01L21/687

Abstract: A vertical furnace and a method for processing a plurality of substrates in said vertical furnace is disclosed. Embodiments of the presently described vertical furnace comprise a process chamber, a heating element configured to provide the heat to reach the desired process temperature for the processing of the plurality of substrates. The vertical furnace may further comprise heat distributing member for distributing the heat provided by the heating element. Embodiments of the presently described method comprise processing the plurality of substrates in a vertical furnace described herein.

公开(公告)号：US20240254629A1

公开(公告)日：2024-08-01

申请号：US18631858

申请日：2024-04-10

Applicant: ASM IP Holding B.V.

Inventor： Ankit Kimtee ,  Rohan Vijay Rane ,  Herbert Terhorst ,  Eric James Shero ,  Jereld Lee Winkler ,  Michael Schmotzer ,  Shuyang Zhang ,  Todd Robert Dunn ,  Shubham Garg

IPC: C23C16/458 ,  C23C16/46

CPC classification number: C23C16/4586 ,  C23C16/46

Abstract: A susceptor assembly includes a heater pedestal and a cap coupled to the heater pedestal. The cap can include one or mor through holes to facilitate purging and/or reduce dead volumes associated with the susceptor assemblies. Reactor systems including such assemblies are also disclosed.

公开(公告)号：US11926894B2

公开(公告)日：2024-03-12

申请号：US15585540

申请日：2017-05-03

Applicant: ASM IP Holding B.V.

Inventor： Mohith Verghese ,  Eric James Shero ,  Carl Louis White ,  Kyle Fondurulia ,  Herbert Terhorst

IPC: C23C16/44 ,  C23C16/448 ,  C23C16/455

CPC classification number: C23C16/4481 ,  C23C16/45544

Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.

公开(公告)号：US20240068097A1

公开(公告)日：2024-02-29

申请号：US18452725

申请日：2023-08-21

Applicant: ASM IP Holding B.V.

Inventor： Subir Parui ,  Werner Knaepen ,  Dieter Pierreux ,  Kelly Houben ,  Herbert Terhorst ,  Theodorus G.M. Oosterlaken ,  Angelos Karagiannis

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45574 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/4584 ,  C23C16/52

Abstract: A substrate processing apparatus configured to from a layer on a plurality of substrates is disclosed. Embodiments of the presently described substrate processing apparatus comprise a process chamber. The process chamber comprises process space for receiving a substrate boat arranged for holding the plurality of substrates. The substrate processing apparatus further comprise a gas delivery assembly comprising at least one gas injector; a gas exhaust assembly comprising two gas outlets. The two gas outlets are positioned at a distance on either side of the at least one gas injector.

公开(公告)号：US20230207377A1

公开(公告)日：2023-06-29

申请号：US18087871

申请日：2022-12-23

Applicant: ASM IP Holding B.V.

Inventor： Rohan Vijay Rane ,  Herbert Terhorst ,  Eric James Shero ,  Ankit Kimtee ,  Jereld Lee Winkler ,  Michael Schmotzer ,  Shuyang Zhang ,  Todd Robert Dunn ,  Shubham Garg

IPC: H01L21/687 ,  C23C16/44

CPC classification number: H01L21/68735 ,  C23C16/4408 ,  H01L21/68785

Abstract: A semiconductor processing device comprises a susceptor assembly comprising a wafer support configured to support a wafer. The wafer support comprises a wafer support body configured to support the wafer, a purge channel extending laterally from an inner portion of the wafer support body to an outer portion of the wafer support body, a first plenum channel disposed at the outer portion of the wafer support and in fluid communication with the purge channel, and an outlet to deliver purge gas to an edge of the wafer, the outlet in fluid communication with the first plenum channel, a purge gas supply hole on a surface opposite to the wafer support body. The purge gas supply hole is in fluid communication with the purge channel, and a plurality of first purge holes fluidly communicated with the first plenum channel and the purge channel.

公开(公告)号：US20210214846A1

公开(公告)日：2021-07-15

申请号：US17149023

申请日：2021-01-14

Applicant: ASM IP HOLDING B.V.

Inventor： Dinkar Nandwana ,  Carl Louis White ,  Eric James Shero ,  William George Petro ,  Herbert Terhorst ,  Gnyanesh Trivedi ,  Mark Olstad ,  Ankit Kimtee ,  Kyle Fondurulia ,  Michael Schmotzer ,  Jereld Lee Winkler

IPC: C23C16/455 ,  C23C16/458

Abstract: The present disclosure pertains to embodiments of a showerhead assembly which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The showerhead assembly has a showerhead which has an increased thickness which advantageously decreases reactor chamber size and decreases cycling time. Decreased cycling time can improve throughput and decrease costs.

公开(公告)号：US20190032998A1

公开(公告)日：2019-01-31

申请号：US15660805

申请日：2017-07-26

Applicant: ASM IP Holding B.V.

Inventor： Lucian C. Jdira ,  Chris G.M. de Ridder ,  Theodorus G.M. Oosterlaken ,  Klaas P. Boonstra ,  Herbert Terhorst ,  Juul Keijser

IPC: F27B5/04 ,  F27B1/14 ,  F27B1/28 ,  F27B5/08 ,  F27B5/12 ,  F27B5/16 ,  F27D3/00 ,  F27D11/00

Abstract: An assembly of a liner and a flange for a vertical furnace for processing substrates is provided. The liner being configured to extend in the interior of a process tube of the vertical furnace, and the flange is configured to at least partially close a liner opening. The liner comprising a substantially cylindrical wall delimited by the liner opening at a lower end and closed at a higher end and being substantially closed for gases above the liner opening and defining an inner space. The flange comprising:an inlet opening configured to insert and remove a boat configured to carry substrates in the inner space of the liner;a gas inlet to provide a gas to the inner space. The assembly is constructed and arranged with a gas exhaust opening to remove gas from the inner space and a space between the liner and the low pressure tube.

公开(公告)号：US20180094351A1

公开(公告)日：2018-04-05

申请号：US15585540

申请日：2017-05-03

Applicant: ASM IP Holding B.V.

Inventor： Mohith Verghese ,  Eric James Shero ,  Carl Louis White ,  Kyle Fondurulia ,  Herbert Terhorst

IPC: C23C16/448 ,  C23C16/455

CPC classification number: C23C16/4481 ,  C23C16/45544

Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.

公开(公告)号：US09431238B2

公开(公告)日：2016-08-30

申请号：US14718517

申请日：2015-05-21

Applicant: ASM IP Holding B.V.

Inventor： Bert Jongbloed ,  Dieter Pierreux ,  Cornelius A. van der Jeugd ,  Herbert Terhorst ,  Lucian Jdira ,  Radko G. Bankras ,  Theodorus G. M. Oosterlaken

IPC: H01L21/02

CPC classification number: H01L21/02337 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02233 ,  H01L21/02274

Abstract: In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500° C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber.

Abstract translation: 在一些实施方案中，反应性固化方法可以通过将处理室中的半导体衬底暴露于含有过氧化氢的环境中，其中处理室中的压力为约300托或更小。 在一些实施方案中，过氧化氢分子在处理室中的停留时间为约5分钟或更短。 固化过程温度可以设定在约500℃或更低。 固化过程可用于固化可流动介电材料，并且可以提供高度均匀的固化结果，例如在批处理室中固化的一批半导体衬底。