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公开(公告)号：US20230005734A1
公开(公告)日：2023-01-05
申请号：US17944583
申请日：2022-09-14
Applicant: ASM IP Holding B.V.
Inventor： Shinya Yoshimoto , Jun Yoshikawa , Toshihisa Nozawa
IPC: H01L21/02 , H01L21/285
Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.
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