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公开(公告)号：US10546790B2
公开(公告)日：2020-01-28
申请号：US15445478
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.
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公开(公告)号：US12124174B2
公开(公告)日：2024-10-22
申请号：US17438994
申请日：2020-02-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Paul Jonathan Turner , Anagnostis Tsiatmas
IPC: G03F7/00
CPC classification number: G03F7/70633
Abstract: A method, computer program and associated apparatuses for metrology. The method includes determining whether a substrate or substrate portion is subject to a process effect. The method includes: obtaining inspection data including a plurality of sets of measurement data associated with a structure on the substrate or portion thereof (for example measurement pupils); and obtaining fingerprint data describing a spatial variation of a parameter of interest. An iterative mapping of the inspection data to the fingerprint data is performed. Whether the structure is subject to a process effect is based on a degree to which the iterative mapping converges on a solution.
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公开(公告)号：US11784098B2
公开(公告)日：2023-10-10
申请号：US17408043
申请日：2021-08-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
CPC classification number: H01L22/12 , G01N21/9501 , G03F7/70633 , G03F7/70683 , G03F9/7003
Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.
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公开(公告)号：US11101184B2
公开(公告)日：2021-08-24
申请号：US16572751
申请日：2019-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
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公开(公告)号：US10677589B2
公开(公告)日：2020-06-09
申请号：US16105013
申请日：2018-08-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Alok Verma , Hugo Augustinus Joseph Cramer , Thomas Theeuwes , Anagnostis Tsiatmas , Bert Verstraeten
IPC: G06F17/50 , G01B11/00 , G01N21/55 , G06F7/00 , G01B11/27 , G03F7/20 , G06F30/398 , G06F30/3308 , G06F30/367
Abstract: A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.
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Patent Agency Ranking
公开(公告)号：US20190155173A1
公开(公告)日：2019-05-23
申请号：US16178638
申请日：2018-11-02
Applicant: ASML Netherlands B.V.
Inventor： Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard Mc Namara , Thomas Theeuwes , Maria Isabel De La Fuente Valentin , Mir Homayoun Shahrjerdy , Arie Jeffrey Den Boef , Shu-jin Wang
Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
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公开(公告)号：US20190063911A1
公开(公告)日：2019-02-28
申请号：US16105013
申请日：2018-08-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Alok Verma , Hugo Augustinus Joseph Cramer , Thomas Theeuwes , Anagnostis Tsiatmas , Bert Verstraeten
Abstract: A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.
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18.发明授权公开(公告)号：US12142535B2
公开(公告)日：2024-11-12
申请号：US15445465
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
Abstract: A method of determining overlay of a patterning process, the method including: illuminating a substrate with a radiation beam such that a beam spot on the substrate is filled with one or more physical instances of a unit cell, the unit cell having geometric symmetry at a nominal value of overlay; detecting primarily zeroth order radiation redirected by the one or more physical instances of the unit cell using a detector; and determining, by a hardware computer system, a non-nominal value of overlay of the unit cell from values of an optical characteristic of the detected radiation.
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19.发明授权公开(公告)号：US10983445B2
公开(公告)日：2021-04-20
申请号：US16268564
申请日：2019-02-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitesh Pandey , Zili Zhou , Gerbrand Van Der Zouw , Arie Jeffrey Den Boef , Markus Gerardus Martinus Maria Van Kraaij , Armand Eugene Albert Koolen , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen , Martinus Hubertus Maria Van Weert , Anagnostis Tsiatmas , Shu-jin Wang , Bastiaan Onne Fagginger Auer , Alok Verma
Abstract: An inspection apparatus, method, and system are described herein. An example inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, the illumination beam polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization. The inspection apparatus may be further configured to generate image data representing an image of each of the feature(s) based on the intensity data, and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.
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公开(公告)号：US10795269B2
公开(公告)日：2020-10-06
申请号：US16170786
申请日：2018-10-25
Applicant: ASML Netherlands B.V.
Inventor： Zili Zhou , Gerbrand Van Der Zouw , Nitesh Pandey , Markus Gerardus Martinus Maria Van Kraaij , Martinus Hubertus Maria Van Weert , Anagnostis Tsiatmas , Sergey Tarabrin , Hilko Dirk Bos
Abstract: The disclosure relates to methods of determining a value of a parameter of interest of a patterning process, and of cleaning a signal containing information about the parameter of interest. In one arrangement, first and second detected representations of radiation are obtained. The radiation is provided by redirection of polarized incident radiation by a structure. The first and second detected representations are derived respectively from first and second polarization components of the redirected radiation. An asymmetry in the first detected representation comprises a contribution from the parameter of interest and a contribution from one or more other sources of asymmetry. An asymmetry in the second detected representation comprises a larger contribution from said one or more other sources of asymmetry relative to a contribution from the parameter of interest. A combination of the first and second detected representations is used to determine a value of the parameter of interest.
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