公开(公告)号：US11822255B2

公开(公告)日：2023-11-21

申请号：US17389842

申请日：2021-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham Slachter ,  Stefan Hunsche ,  Wim Tjibbo Tel ,  Anton Bernhard Van Oosten ,  Koenraad Van Ingen Schenau ,  Gijsbert Rispens ,  Brennan Peterson

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70558 ,  G03F7/70625

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US10775705B2

公开(公告)日：2020-09-15

申请号：US16325228

申请日：2017-08-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Jozef Maria Finders ,  Orion Jonathan Pierre Mouraille ,  Anton Bernhard Van Oosten

IPC: G03F7/20

Abstract: A method of tuning a patterning stack, the method including: defining a function that measures how a parameter representing a physical characteristic pertaining to a pattern transferred into a patterning stack on a substrate is affected by change in a patterning stack variable, the patterning stack variable representing a physical characteristic of a material layer of the patterning stack; varying, by a hardware computer system, the patterning stack variable and evaluating, by the hardware computer system, the function with respect to the varied patterning stack variable, until a termination condition is satisfied; and outputting a value of the patterning stack variable when the termination condition is satisfied.

公开(公告)号：US10732511B2

公开(公告)日：2020-08-04

申请号：US16257955

申请日：2019-01-25

Applicant: ASML Netherlands B.V.

Inventor： Marcus Adrianus Van De Kerkhof ,  Anton Bernhard Van Oosten ,  Hans Butler ,  Erik Roelof Loopstra ,  Marc Wilhelmus Maria Van Der Wijst ,  Koen Jacobus Johannes Maria Zaal

IPC: G03F7/20 ,  G02B7/182 ,  G02B26/08

Abstract: Disclosed is a system configured to project a beam of radiation onto a target portion of a substrate within a lithographic apparatus. The system comprises a mirror having an actuator for positioning the mirror and/or configuring the shape of the mirror, the actuator also providing active damping to the mirror, and a controller for generating actuator control signals for control of said actuator(s). A first coordinate system is used for control of said actuator(s) when positioning said mirror and/or configuring the shape of said mirror and a second coordinate system is used for control of said actuator(s) when providing active damping to said mirror.

公开(公告)号：US10571812B2

公开(公告)日：2020-02-25

申请号：US16045979

申请日：2018-07-26

Applicant: ASML Netherlands B.V.

Inventor： Fahong Li ,  Miguel Garcia Granda ,  Carlo Cornelis Maria Luijten ,  Bart Peter Bert Segers ,  Cornelis Andreas Franciscus Johannes Van Der Poel ,  Frank Staals ,  Anton Bernhard Van Oosten ,  Mohamed Ridane

IPC: G03F7/20 ,  G01M11/02

Abstract: Focus performance of a lithographic apparatus is measured using pairs of targets that have been exposed (1110) with an aberration setting (e.g. astigmatism) that induces a relative best focus offset between them. A calibration curve (904) is obtained in advance by exposing similar targets on FEM wafers (1174, 1172). In a set-up phase, calibration curves are obtained using multiple aberration settings, and an anchor point (910) is recorded, where all the calibration curves intersect. When a new calibration curve is measured (1192), the anchor point is used to produce an adjusted updated calibration curve (1004′) to cancel focus drift and optionally to measure drift of astigmatism. Another aspect of the disclosure (FIGS. 13-15) uses two aberration settings (+AST, −AST) in each measurement, reducing sensitivity to astigmatism drift. Another aspect (FIGS. 16-17) uses pairs of targets printed with relative focus offsets, by double exposure in one resist layer.

公开(公告)号：US10216093B2

公开(公告)日：2019-02-26

申请号：US14762190

申请日：2013-12-12

Applicant: ASML Netherlands B.V.

Inventor： Marcus Adrianus Van De Kerkhof ,  Anton Bernhard Van Oosten ,  Hans Butler ,  Erik Roelof Loopstra ,  Marc Wilhelmus Maria Van Der Wijst ,  Koen Jacobus Johannes Maria Zaal

IPC: G03F7/20 ,  G02B7/182 ,  G02B26/08

Abstract: Disclosed is a system configured to project a beam of radiation onto a target portion of a substrate within a lithographic apparatus. The system comprises a mirror (510) having an actuator (500) for positioning the mirror and/or configuring the shape of the mirror, the actuator also providing active damping to the mirror, and a controller (515a, 515b) for generating actuator control signals for control of said actuator(s). A first coordinate system is used for control of said actuator(s) when positioning said mirror and/or configuring the shape of said mirror and a second coordinate system is used for control of said actuator(s) when providing active damping to said mirror.

公开(公告)号：US10001710B2

公开(公告)日：2018-06-19

申请号：US15214067

申请日：2016-07-19

Applicant: ASML Netherlands B.V.

Inventor： Frank Staals ,  Carlo Cornelis Maria Luijten ,  Paul Christiaan Hinnen ,  Anton Bernhard Van Oosten

IPC: G01B11/04 ,  G03B27/32 ,  G03B27/74 ,  G03C5/00 ,  G03F7/20 ,  G01B11/02 ,  G01B11/27

CPC classification number: G03F7/70633 ,  G01B11/02 ,  G01B11/272 ,  G01B2210/56 ,  G03F7/70625 ,  G03F7/70641

Abstract: Disclosed is a method of monitoring a lithographic process parameter, such as focus and/or dose, of a lithographic process. The method comprises acquiring a first and a second target measurement using respectively a first measurement configuration and a second measurement configuration, and determining the lithographic process parameter from a first metric derived from said first target measurement and said second target measurement. The first metric may be difference. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.