Voltage contrast metrology mark
    1.
    发明授权

    公开(公告)号:US12169366B2

    公开(公告)日:2024-12-17

    申请号:US16772022

    申请日:2018-12-07

    Abstract: A measurement mark is disclosed. According to certain embodiments, the measurement mark includes a set of first test structures developed in a first layer on a substrate, each of the set of first test structures comprising a plurality of first features made of first conducting material. The measurement mark also includes a set of second test structures developed in a second layer adjacent to the first layer, each of the set of second test structures comprising a plurality of second features made of second conducting material. The measurement mark is configured to indicate connectivity between the set of first test structures and associated second test structures in the set of second test structures when imaged using a voltage-contrast imaging method.

    Method for controlling a manufacturing process and associated apparatuses

    公开(公告)号:US11187994B2

    公开(公告)日:2021-11-30

    申请号:US17264023

    申请日:2019-07-03

    Abstract: A method for controlling a manufacturing process for manufacturing semiconductor devices, the method including: obtaining performance data indicative of the performance of the manufacturing process, the performance data including values for a performance parameter across a substrate subject to the manufacturing process; and determining a process correction for the manufacturing process based on the performance data and at least one control characteristic related to a dynamic behavior of one or more control parameters of the manufacturing process, wherein the determining is further based on an expected stability of the manufacturing process when applying the process correction.

    Process window based on defect probability

    公开(公告)号:US11079687B2

    公开(公告)日:2021-08-03

    申请号:US16955483

    申请日:2018-12-17

    Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

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