公开(公告)号：EP3614207A1

公开(公告)日：2020-02-26

申请号：EP18189926.1

申请日：2018-08-21

Applicant: ASML Netherlands B.V.

Inventor： PANDEY, Nitesh ,  DEN BOEF, Arie Jeffrey ,  VAN DAM, Marinus Johannes Maria

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956

Abstract: A metrology tool for determining a parameter of interest of a structure fabricated on a substrate, the metrology tool comprising: an illumination optical system for illuminating the structure with illumination radiation under a non-zero angle of incidence; a detection optical system comprising a detection optical sensor and at least one lens for capturing a portion of illumination radiation scattered by the structure and transmitting the captured radiation towards the detection optical sensor, wherein the illumination optical system and the detection optical system do not share an optical element.

公开(公告)号：EP3149544B1

公开(公告)日：2018-10-10

申请号：EP14748178.2

申请日：2014-08-01

Applicant: ASML Netherlands B.V.

Inventor： DEN BOEF, Arie Jeffrey ,  BHATTACHARYYA, Kaustuve

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/70158 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/708 ,  H01L23/544

Abstract: Metrology targets are formed by a lithographic process, each target comprising a bottom grating and a top grating. Overlay performance of the lithographic process can be measured by illuminating each target with radiation and observing asymmetry in diffracted radiation. Parameters of metrology recipe and target design are selected so as to maximize accuracy of measurement of overlay, rather than reproducibility. The method includes calculating at least one of a relative amplitude and a relative phase between (i) a first radiation component representing radiation diffracted by the top grating and (ii) a second radiation component representing radiation diffracted by the bottom grating after traveling through the top grating and intervening layers. The top grating design may be modified to bring the relative amplitude close to unity. The wavelength of illuminating radiation in the metrology recipe can be adjusted to bring the relative phase close to π/2 or 3π/2.

公开(公告)号：EP4006640A1

公开(公告)日：2022-06-01

申请号：EP20209950.3

申请日：2020-11-26

Applicant: Stichting Nederlandse Wetenschappelijk Onderzoek Instituten ,  ASML Netherlands B.V. ,  Stichting VU ,  Universiteit van Amsterdam

Inventor： KRAUS, Peter Michael ,  ROSCAM ABBING, Sylvianne Dorothea Christina ,  CAMPI, Filippo ,  ZHANG, ZhuangYan ,  SMORENBURG, Petrus Wilhelmus ,  LIN, Nan ,  WITTE, Stefan Michiel ,  DEN BOEF, Arie Jeffrey

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956 ,  G01N23/22

Abstract: Disclosed is a metrology apparatus and method for measurement of a diffractive structure on a substrate. The metrology apparatus comprises a radiation source operable to provide first radiation for excitation of the diffractive structure such that high harmonic second radiation is generated from said diffractive structure and/or substrate; and a detection arrangement operable to detect said second radiation, at least a portion of which having been diffracted by said diffractive structure.

公开(公告)号：EP3454125A1

公开(公告)日：2019-03-13

申请号：EP17189918.0

申请日：2017-09-07

Applicant: ASML Netherlands B.V.

Inventor： HUISMAN, Simon, Reinald ,  DEN BOEF, Arie Jeffrey

IPC: G03F7/20

Abstract: A method of determining a parameter of a patterning process applied to an object comprising two features (for example an overlay of the two features) comprises: irradiating the two features of the object with a radiation beam and receiving at least a portion of the radiation beam scattered from the two features of the object. The at least a portion of the radiation beam comprises: a first portion comprising at least one diffraction order and a second portion comprising at least one diffraction order that is different to a diffraction order of the first portion. The method further comprises moderating a phase difference between the first and second portions and combining the first and second portions such that they interfere to produce a time dependent intensity signal. The method further comprises determining the parameter of the patterning process from a contrast of the time dependent intensity signal.

公开(公告)号：EP3394677A1

公开(公告)日：2018-10-31

申请号：EP16806123.2

申请日：2016-12-06

Applicant: ASML Netherlands B.V.

Inventor： HINNEN, Paul Christiaan ,  MATHIJSSEN, Simon Gijsbert Josephus ,  GOOSEN, Maikel Robert ,  VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie Jeffrey

IPC: G03F7/20

CPC classification number: G03F7/70525 ,  G03F7/702 ,  G03F7/70641 ,  G03F7/70683 ,  G03F7/7085

Abstract: A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (θ). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (S1) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.

公开(公告)号：EP4184426A1

公开(公告)日：2023-05-24

申请号：EP21209476.7

申请日：2021-11-22

Applicant: ASML Netherlands B.V.

Inventor： KOOLEN, Armand Eugene Albert ,  COENE, Willem Marie Julia Marcel ,  KONIJNENBERG, Alexander Prasetya ,  TUKKER, Teunis Willem ,  DEN BOEF, Arie Jeffrey

IPC: G06T5/00 ,  G06T5/10

Abstract: Disclosed is a metrology method and associated devices. The method comprises obtaining a first image, said first image being subject to one or more non-isoplanatic aberrations of an optical system used to capture said image; and non-iteratively correcting said first image for the effect of said one or more non-isoplanatic aberrations by performing one or both of: a field non-isoplanatic correction operation in field space for said first image, said field space corresponding to a field plane of the optical system; and a pupil non-isoplanatic correction operation in pupil space for said first image, said pupil space corresponding to a pupil plane of the optical system. Said one or more non-isoplanatic aberrations comprise a class of non-isoplanatic aberrations describable as a convolution combined with an object distortion and/or a pupil distortion.

公开(公告)号：EP3783436A1

公开(公告)日：2021-02-24

申请号：EP19192284.8

申请日：2019-08-19

Applicant: ASML Netherlands B.V.

Inventor： PANDEY, Nitesh ,  MATHIJSSEN, Simon Gijsbert Josephus ,  BHATTACHARYYA, Kaustuve ,  DEN BOEF, Arie Jeffrey

IPC: G03F7/20 ,  G01J3/36 ,  G01N21/95 ,  G01N21/956 ,  G02B5/20 ,  G02B27/10 ,  G02B27/12

Abstract: Disclosed is an illumination and detection apparatus for a metrology tool, and associated method. The apparatus comprises an illumination arrangement operable to produce measurement illumination comprising a plurality of discrete wavelength bands and comprising a spectrum having no more than a single peak within each wavelength band. The detection arrangement comprises a detection beamsplitter to split scattered radiation into a plurality of channels, each channel corresponding to a different one of said wavelength bands; and at least one detector for separate detection of each channel.

公开(公告)号：EP3454123A1

公开(公告)日：2019-03-13

申请号：EP17189662.4

申请日：2017-09-06

Applicant: ASML Netherlands B.V.

Inventor： JAK, Martin Jacobus Johan ,  EBERT, Martin ,  DEN BOEF, Arie Jeffrey ,  PANDEY, Nitesh

IPC: G03F7/20

Abstract: A method comprising: evaluating a plurality of polarization characteristics associated with measurement of a metrology target of a substrate processed using a patterning process, against one or more measurement quality parameters; and selecting one or more polarization characteristics from the plurality of polarization characteristics based on one or more of the measurement quality parameters.

公开(公告)号：EP3422103A1

公开(公告)日：2019-01-02

申请号：EP17177953.1

申请日：2017-06-26

Applicant: ASML Netherlands B.V.

Inventor： SANGUINETTI, Gonzalo Roberto ,  BOZKURT, Murat ,  VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie Jeffrey

IPC: G03F7/20

Abstract: Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.

公开(公告)号：EP3149544A1

公开(公告)日：2017-04-05

申请号：EP14748178.2

申请日：2014-08-01

Applicant: ASML Netherlands B.V.

Inventor： DEN BOEF, Arie Jeffrey ,  BHATTACHARYYA, Kaustuve

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/70158 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/708 ,  H01L23/544

Abstract: Metrology targets are formed by a lithographic process, each target comprising a bottom grating and a top grating. Overlay performance of the lithographic process can be measured by illuminating each target with radiation and observing asymmetry in diffracted radiation. Parameters of metrology recipe and target design are selected so as to maximize accuracy of measurement of overlay, rather than reproducibility. The method includes calculating at least one of a relative amplitude and a relative phase between (i) a first radiation component representing radiation diffracted by the top grating and (ii) a second radiation component representing radiation diffracted by the bottom grating after traveling through the top grating and intervening layers. The top grating design may be modified to bring the relative amplitude close to unity. The wavelength of illuminating radiation in the metrology recipe can be adjusted to bring the relative phase close to &pgr;/2 or 3&pgr;/2.

Abstract translation: 计量目标由光刻工艺形成，每个目标包括底部光栅和顶面格栅。 所述光刻过程的重叠性能可以通过照射每个目标用辐射和衍射的辐射观测不对称来测量。 计量配方和目标设计参数的选择，从而最大限度地覆盖的测量精度，而不是重复性。 该方法包括：计算相对振幅中的至少一个之间，（ⅰ）的相对相位表示由顶面格栅和衍射的辐射的第一辐射组分（ii）表示由该底部穿过顶部行进之后光栅衍射的辐射的第二辐射部件 光栅和中间层。 顶面格栅设计可以进行修改，以使接近于相对幅度。 在计量配方照射辐射的波长可以被调节，以使相对相位接近PI / 2或3π/ 2。