Abstract:
Disclosed is a method of determining at least one exposure parameter such as focus and/or dose. The method comprises obtaining product metrology data for a plurality of structures; grouping said product metrology data into a plurality of neighbor groups, each neighbor group describing a different arrangement of said structures; obtaining pre-calibrated sensitivity relationship data for each of said plurality of neighbor groups or different combinations thereof, and inferring said at least one exposure parameter from the product metrology data and pre-calibrated sensitivity relationship data.
Abstract:
A method of determining at least one homogeneity metric describing homogeneity of an etched trench on a substrate formed by a lithographic manufacturing process. The method comprises obtaining one or more images of the etched trench, wherein each of said one or more images comprises a spatial representation of one or more parameters of scattered radiation as detected by a detector or camera (365) following scattering and/or diffraction from the etched trench; and measuring homogeneity along the length of the etched trench on said one or more images to determine said at least one homogeneity metric.
Abstract:
An apparatus and method for estimating a parameter of a lithographic process and an apparatus and method for determining a relationship between a measure of quality of an estimate of a parameter of a lithographic process are provided. In the apparatus for estimating the parameter a processor is configured to determine a quality of the estimate of the parameter relating to the tested substrate based on a measure of feature asymmetry in the at least first features of the tested substrate and further based on a relationship determined for a plurality of corresponding at least first features of at least one further substrate representative of the tested substrate, the relationship being between a measure of quality of an estimate of the parameter relating to the at least one further substrate and a measure of feature asymmetry in the corresponding first features.
Abstract:
A method to determine a patterning process parameter, the method comprising: for a target, calculating a first value for an intermediate parameter from data obtained by illuminating the target with radiation comprising a central wavelength; for the target, calculating a second value for the intermediate parameter from data obtained by illuminating the target with radiation comprising two different central wavelengths; and calculating a combined measurement for the patterning process parameter based on the first and second values for the intermediate parameter.
Abstract:
A metrology apparatus is disclosed that measures a structure formed on a substrate to determine a parameter of interest. The apparatus comprises an optical system configured to focus radiation onto the structure and direct radiation after reflection from the structure onto a detector, wherein: the optical system is configured such that the detector detects a radiation intensity resulting from interference between radiation from at least two different points in a pupil plane field distribution, wherein the interference is such that a component of the detected radiation intensity containing information about the parameter of interest is enhanced relative to one or more other components of the detected radiation intensity.
Abstract:
A method of aligning a diffractive optical system, to be operated with an operating beam, comprises: aligning the diffractive optical system using an alignment beam having a different wavelength range from the operating beam and using a diffractive optical element (604 - 616) optimized to diffract the alignment beam and the operating beam in the same, or a predetermined, direction. In an example, the alignment beam comprises infra-red (IR) radiation and the operating beam comprises soft X-ray (SXR) radiation. The diffractive optical element is optimized by providing it with a first periodic structure with a first pitch (p IR ) and a second periodic structure with a second pitch (p SXR ). After alignment, the vacuum system is pumped down and in operation the SXR operating beam is generated by a high harmonic generation (HHG) optical source pumped by the IR alignment beam' optical source.
Abstract:
A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (θ). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (S1) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.
Abstract:
Disclosed is an illumination source for generating measurement radiation for an inspection apparatus. The source generates at least first measurement radiation and second measurement radiation such that the first measurement radiation and the second measurement radiation interfere to form combined measurement radiation modulated with a beat component. The illumination source may be a HHG source. Also disclosed is an inspection apparatus comprising such a source and an associated inspection method.
Abstract:
Disclosed is a method of inferring a value for at least one local uniformity metric relating to product structure and associated apparatus. The method comprises obtaining intensity data relating to a measurement of a target and describing at least one intensity distribution per target position of the target and determining at least one intensity indicator from said at least one intensity distribution. The value for the at least one local uniformity metric is inferred from the at least one intensity indicator.
Abstract:
Disclosed is an illumination and detection apparatus for a metrology tool, and associated method. The apparatus comprises an illumination arrangement operable to produce measurement illumination comprising a plurality of discrete wavelength bands and comprising a spectrum having no more than a single peak within each wavelength band. The detection arrangement comprises a detection beamsplitter to split scattered radiation into a plurality of channels, each channel corresponding to a different one of said wavelength bands; and at least one detector for separate detection of each channel.