METROLOGY METHOD FOR MEASURING AN ETCHED TRENCH AND ASSOCIATED METROLOGY APPARATUS

    公开(公告)号:EP4016186A1

    公开(公告)日:2022-06-22

    申请号:EP20215422.5

    申请日:2020-12-18

    Abstract: A method of determining at least one homogeneity metric describing homogeneity of an etched trench on a substrate formed by a lithographic manufacturing process. The method comprises obtaining one or more images of the etched trench, wherein each of said one or more images comprises a spatial representation of one or more parameters of scattered radiation as detected by a detector or camera (365) following scattering and/or diffraction from the etched trench; and measuring homogeneity along the length of the etched trench on said one or more images to determine said at least one homogeneity metric.

    METROLOGY IN LITHOGRAPHIC PROCESSES
    3.
    发明公开

    公开(公告)号:EP3462239A1

    公开(公告)日:2019-04-03

    申请号:EP17193415.1

    申请日:2017-09-27

    Abstract: An apparatus and method for estimating a parameter of a lithographic process and an apparatus and method for determining a relationship between a measure of quality of an estimate of a parameter of a lithographic process are provided. In the apparatus for estimating the parameter a processor is configured to determine a quality of the estimate of the parameter relating to the tested substrate based on a measure of feature asymmetry in the at least first features of the tested substrate and further based on a relationship determined for a plurality of corresponding at least first features of at least one further substrate representative of the tested substrate, the relationship being between a measure of quality of an estimate of the parameter relating to the at least one further substrate and a measure of feature asymmetry in the corresponding first features.

    METHOD TO DETERMINE A PATTERNING PROCESS PARAMETER

    公开(公告)号:EP3460574A1

    公开(公告)日:2019-03-27

    申请号:EP17192525.8

    申请日:2017-09-22

    Abstract: A method to determine a patterning process parameter, the method comprising: for a target, calculating a first value for an intermediate parameter from data obtained by illuminating the target with radiation comprising a central wavelength; for the target, calculating a second value for the intermediate parameter from data obtained by illuminating the target with radiation comprising two different central wavelengths; and calculating a combined measurement for the patterning process parameter based on the first and second values for the intermediate parameter.

    ILLUMINATION SOURCE FOR AN INSPECTION APPARATUS, INSPECTION APPARATUS AND INSPECTION METHOD
    8.
    发明公开
    ILLUMINATION SOURCE FOR AN INSPECTION APPARATUS, INSPECTION APPARATUS AND INSPECTION METHOD 审中-公开
    检查设备的照明源,检查设备和检查方法

    公开(公告)号:EP3276419A1

    公开(公告)日:2018-01-31

    申请号:EP16181778.8

    申请日:2016-07-28

    CPC classification number: G03F7/70625 G01N21/47 G03F7/70633

    Abstract: Disclosed is an illumination source for generating measurement radiation for an inspection apparatus. The source generates at least first measurement radiation and second measurement radiation such that the first measurement radiation and the second measurement radiation interfere to form combined measurement radiation modulated with a beat component. The illumination source may be a HHG source. Also disclosed is an inspection apparatus comprising such a source and an associated inspection method.

    Abstract translation: 公开了一种用于为检查设备产生测量辐射的照明源。 源产生至少第一测量辐射和第二测量辐射,使得第一测量辐射和第二测量辐射干涉以形成用差拍分量调制的组合测量辐射。 照明源可以是HHG源。 还公开了包括这样的源和相关联的检查方法的检查设备。

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