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公开(公告)号:US20250155820A1
公开(公告)日:2025-05-15
申请号:US19020768
申请日:2025-01-14
Applicant: ASML Netherlands B.V.
Inventor: Remco Johannes Elisa HEIJMANS , Gerrit VAN DER STRAATEN , Ivo VANDERHALLEN , Jan Steven Christiaan WESTERLAKEN
Abstract: A radiation source for an EUV lithography apparatus is disclosed. The radiation source comprises a chamber comprising a plasma formation region, a radiation collector arranged in the chamber and configured to collect radiation emitted at the plasma formation region and to direct the collected radiation towards an intermediate focus region, and a radiation conduit disposed between the radiation collector and the intermediate focus region. The radiation conduit comprises at least one outlet on an inner surface of a wall of the radiation conduit for directing a protective gas flow, and at least one guide portion extending from the inner surface of the wall of the radiation conduit and configured to redirect the protective gas flow. Also disclosed is a method of reducing debris and/or vapor deposition in the radiation conduit by providing a protective gas flow to the at least one outlet of the radiation conduit.
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公开(公告)号:US20250021026A1
公开(公告)日:2025-01-16
申请号:US18711842
申请日:2022-11-18
Applicant: ASML Netherlands B.V.
Inventor: William Peter VAN DRENT , Jan Steven Christiaan WESTERLAKEN , Daniel Jozef Maria DIRECKS , Johannes Henricus Wilhelmus JACOBS , Maurice Wilhelmus Leonardus Hendricus FEIJTS , Edwin Johan BUIS , Bart Leonardus KNAPEN , Nicolaas Johannes Wilhelmus REUVERS , Bastiaan Lambertus Wilhelmus Marinus VAN DE VEN
Abstract: The present invention relates to an apparatus for supplying a liquid target material to a radiation source, comprising a first reservoir, a pressurizing system configured to pressurize a hydraulic fluid, and a separating device configured to separate the hydraulic fluid from the liquid target material in the first reservoir and to transfer a pressure from the hydraulic fluid to the liquid target material. The invention also relates to an associated method of supplying liquid target material to a radiation source.
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公开(公告)号:US20220390852A1
公开(公告)日:2022-12-08
申请号:US17764865
申请日:2020-09-08
Applicant: ASML Netherlands B.V.
Inventor: Remco Johannes Elisa HEIJMANS , Gerrit VAN DER STRAATEN , Ivo VANDERHALLEN , Jan Steven Christiaan WESTERLAKEN
Abstract: A radiation source for an EUV lithography apparatus is disclosed. The radiation source comprises a chamber comprising a plasma formation region, a radiation collector arranged in the chamber and configured to collect radiation emitted at the plasma formation region and to direct the collected radiation towards an intermediate focus region, and a radiation conduit disposed between the radiation collector and the intermediate focus region. The radiation conduit comprises at least one outlet on an inner surface of a wall of the radiation conduit for directing a protective gas flow, and at least one guide portion extending from the inner surface of the wall of the radiation conduit and configured to redirect the protective gas flow. Also disclosed is a method of reducing debris and/or vapor deposition in the radiation conduit by providing a protective gas flow to the at least one outlet of the radiation conduit.
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公开(公告)号:US20220197158A1
公开(公告)日:2022-06-23
申请号:US17603687
申请日:2020-03-10
Applicant: ASML Netherlands B.V.
Inventor: Sander Catharina Reinier DERKS , Daneil Jozel Maria DIRECKS , Marurice Wilhelmus Leonardus Hendricu FEIJTS , Pieter Geradus Mathijs HOEIJMAKERS , Katja Cornelia Joanna Clasina MOORS , Violeta NAVARRO PAREDES , William Peter VAN DRENTS , Jan Steven Christiaan WESTERLAKEN
Abstract: A contamination trap for use in a debris mitigation system of a radiation source, the contamination trap comprising a plurality of vanes configured to trap fuel debris emitted from a plasma formation region of the radiation source; wherein at least one vane or each vane of the plurality of vanes comprises a material comprising a thermal conductivity above 30 W m−1K−1.
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公开(公告)号:US20180113389A1
公开(公告)日:2018-04-26
申请号:US15567252
申请日:2016-03-09
Applicant: ASML NETHERLANDS B.V.
Inventor: Johannes Pieter KROES , Kevin Nicolas Stephan COUTEAU , Rachid EL BOUBSI , Rob Johan Theodoor RUTTEN , Patrick Johannes Cornelus Hendrik SMULDERS , Martijn Lambertus Peter VISSER , Jan Steven Christiaan WESTERLAKEN
IPC: G03F7/20
CPC classification number: G03F7/70908 , G03F7/70716
Abstract: An apparatus has a first component with a first surface and a second component with a second surface, wherein the first and second components can undergo relative movement. The first surface and the second surface face each other. The first surface accommodates a barrier system to provide a barrier to reduce or prevent an inflow of ambient gas into a protected volume of gas between the first and second surfaces. The barrier system includes a curtain opening adapted for a flow of curtain gas therefrom for establishing a gas curtain enclosing part of the protected volume, and an inner entrainment opening, located inward of the curtain opening with respect to the protected volume, adapted for a flow of inner entrainment gas therefrom for being entrained into the flow of curtain gas. The apparatus is configured such that the inner entrainment gas flow is less turbulent than the curtain gas flow.
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公开(公告)号:US20170363964A1
公开(公告)日:2017-12-21
申请号:US15694519
申请日:2017-09-01
Applicant: ASML Netherlands B.V.
Inventor: Thibault Simon Mathieu LAURENT , Johannes Henricus Wilhelmus JACOBS , Haico Victor KOK , Yuri Johannes Gabriël VAN DE VIJVER , Johannes Antonius Maria VAN DE WAL , Bastiaan Andreas Wilhelmus Hubertus KNARREN , Robbert-Jan VOOGD , Jan Steven Christiaan WESTERLAKEN , Johannes Hubertus Antonius VAN DE RIJDT , Allard Eelco KOOIKER , Wilhelmina Margareta Jozef HURKENS-MERTENS , Yohann Bruno Yvon TEILLET
IPC: G03F7/20
CPC classification number: G03F7/7085 , G03F7/70341 , G03F7/70666 , G03F7/70858 , G03F7/70891
Abstract: A sensor for use in lithographic apparatus of an immersion type and which, in use, comes into contact with the immersion liquid is arranged so that the thermal resistance of a first heat path from a transducer of the sensor to a temperature conditioning device is less than the thermal resistance of a second heat flow path from the transducer to the immersion liquid. Thus, heat flow is preferentially towards the temperature conditioning device and not the immersion liquid so that temperature-induced disturbance in the immersion liquid is reduced or minimized.
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