公开(公告)号：US20230176491A1

公开(公告)日：2023-06-08

申请号：US17923913

申请日：2021-04-21

Applicant: ASML Netherlands B.V.

Inventor： Olger Victor ZWIER ,  Maurits VAN DER SCHAAR ,  Hilko Dirk BOS ,  Hans VAN DER LAAN ,  S.M. Masudur Rahman AL ARIF ,  Henricus Wilhelmus Maria Van Buel ,  Armand Eugene Albert KOOLEN ,  Victor CALADO ,  Kaustuve BHATTACHARYYA ,  Jin LIAN ,  Sebastianus Adrianus GOORDEN ,  Hui Quan LIM

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F7/70558 ,  G03F7/70633 ,  G03F7/70625

Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.

公开(公告)号：US20220260929A1

公开(公告)日：2022-08-18

申请号：US17628668

申请日：2020-07-06

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Nikhil MEHTA ,  Maurits VAN DER SCHAAR ,  Markus Gerardus Martinus Maria VAN KRAAIJ ,  Hugo Augustinus Joseph CRAMER ,  Olger Victor ZWIER ,  Jeroen COTTAAR ,  Patrick WARNAAR

IPC: G03F7/20 ,  G03F1/84 ,  G01N21/956

Abstract: A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.

公开(公告)号：US20210389365A1

公开(公告)日：2021-12-16

申请号：US17460947

申请日：2021-08-30

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Patrick WARNAAR ,  Vasco Tomas TENNER ,  Maurits VAN DER SCHAAR

IPC: G01R31/265

Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.

公开(公告)号：US20180046737A1

公开(公告)日：2018-02-15

申请号：US15559759

申请日：2016-03-24

Applicant: ASML Netherlands B.V.

Inventor： Lotte Marloes WILLEMS ,  Kaustuve BHATTACHARYYA ,  Panagiotis Peter BINTEVINOS ,  Guangqing CHEN ,  Martin EBERT ,  Pieter Jacob Mathias Hendrik KNELISSEN ,  Stephen MORGAN ,  Maurits VAN DER SCHAAR ,  Leonardus Hericus Marie VERSTAPPEN ,  Jen-Shiang WANG ,  Peter Hanzen WARDENIER

IPC: G06F17/50 ,  G03F7/20

CPC classification number: G06F17/5009 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7046 ,  G06F2217/16

Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.

公开(公告)号：US20170010541A1

公开(公告)日：2017-01-12

申请号：US15114368

申请日：2015-01-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Seyed Iman MOSSAVAT ,  Hugo Augustinus Joseph CRAMER ,  Maurits VAN DER SCHAAR

IPC: G03F7/20 ,  G01B11/27

CPC classification number: G03F7/70591 ,  G01B11/272 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

Abstract: A method of determining edge placement error within a structure produced using a lithographic process, the method comprising the steps of: (a) receiving a substrate comprising a first structure produced using the lithographic process, the first structure comprising first and second layers, each of the layers having first areas of electrically conducting material and second areas of non-electrically conducting material; (b) receiving a target signal indicative of a first target relative position which is indicative of a target position of edges between the first areas and the second areas of the first layer relative to edges between the first areas and second areas of the second layer in the first structure during said lithographic process; (c) detecting scattered radiation while illuminating the first structure with optical radiation to obtain a first signal; and (d) ascertaining an edge placement error parameter on the basis of the first signal and the first target relative position.

Abstract translation: 一种确定在使用光刻工艺制造的结构内的边缘放置误差的方法，所述方法包括以下步骤：（a）接收包括使用所述光刻工艺制造的第一结构的衬底，所述第一结构包括第一层和第二层， 所述层具有导电材料的第一区域和非导电材料的第二区域; （b）接收指示第一目标相对位置的目标信号，该第一目标相对位置指示相对于第二层的第一区域和第二区域之间的边缘在第一区域和第一层的第二区域之间的边缘的目标位置 在所述平版印刷过程中的第一结构; （c）在用光辐射照射第一结构的同时检测散射辐射以获得第一信号; 和（d）基于第一信号和第一目标相对位置确定边缘放置误差参数。

公开(公告)号：US20160179019A1

公开(公告)日：2016-06-23

申请号：US15057651

申请日：2016-03-01

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Patrick WARNAAR ,  Kaustuve BHATTACHARYYA ,  Hendrik Jan Hidde SMILDE ,  Michael KUBIS

IPC: G03F9/00

CPC classification number: G03F9/7042 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683 ,  H01L23/544 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

公开(公告)号：US20160116849A1

公开(公告)日：2016-04-28

申请号：US14892176

申请日：2014-05-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Hugo Augustinus Joseph CRAMER ,  Arie Jeffrey DEN BOEF ,  Henricus Johannes Lambertus MEGENS ,  Maurits VAN DER SCHAAR ,  Te-Chih HUANG

IPC: G03F7/20

CPC classification number: G03F7/70133 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of determining a critical-dimension-related property, such as critical dimension (CD) or exposure dose, includes illuminating each of a plurality of periodic targets having different respective critical dimension biases, measuring intensity of radiation scattered by the targets, recognizing and extracting each grating from the image, determining a differential signal, and determining the CD-related property based on the differential signal, the CD biases and knowledge that the differential signal approximates to zero at a 1:1 line-to-space ratio of such periodic targets. Use of the determined CD-related property to control a lithography apparatus in lithographic processing of subsequent substrates. In order to use just two CD biases, a calibration may use measurements on a “golden wafer” (i.e. a reference substrate) to determine the intensity gradient for each of the CD pairs, with known CDs. Alternatively, the calibration can be based upon simulation of the sensitivity of intensity gradient to CD.

Abstract translation: 确定临界尺寸相关性质（例如临界尺寸（CD）或曝光剂量）的方法包括照射具有不同的相应临界尺寸偏差的多个周期性靶标中的每一个，测量由靶标散射的辐射的强度，识别和 从图像中提取每个光栅，确定差分信号，并且基于差分信号确定CD相关属性，CD偏差和差分信号以这样的1：1线间比接近零的知识 定期目标。 使用确定的CD相关属性来控制光刻设备在后续基板的光刻处理中。 为了仅使用两个CD偏移，校准可以使用“金色晶片”（即，参考基底）上的测量来确定具有已知CD的每个CD对的强度梯度。 或者，校准可以基于对CD的强度梯度的灵敏度的模拟。

公开(公告)号：US20220035255A1

公开(公告)日：2022-02-03

申请号：US17299531

申请日：2019-12-04

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Olger Victor ZWIER ,  Patrick WARNAAR

IPC: G03F7/20 ,  G01N21/47

Abstract: A target for determining a performance parameter of a lithographic process, the target comprising a first sub-target formed by at least two overlapping gratings, wherein the underlying grating of the first sub-target has a first pitch and the top lying grating of the first sub-target has a second pitch, at least a second sub-target formed by at least two overlapping gratings, wherein the underlying grating of the second sub-target has a third pitch and the top lying grating of the second sub-target has a fourth pitch.

公开(公告)号：US20210208083A1

公开(公告)日：2021-07-08

申请号：US17192276

申请日：2021-03-04

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Amo Jan BLEEKER ,  Youri Johannes VAN DOMMELEN ,  Mircea DUSA ,  Antoine Gaston Marie KIERS ,  Paul Frank LUEHRMANN ,  Henricus Petrus Maria PELLEMANS ,  Maurits VAN DER SCHAAR ,  Cédric Désiré GROUWSTRA ,  Markus Geradus Maritinus VAN KRAAIJ

IPC: G01N21/88 ,  G03F7/20 ,  G03F9/00

Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

公开(公告)号：US20200183290A1

公开(公告)日：2020-06-11

申请号：US16792267

申请日：2020-02-16

Applicant: ASML Netherlands B.V.

Inventor： Gonzalo Roberto SANGUINETTI ,  Murat BOZKURT ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF

IPC: G03F7/20 ,  G01B11/27

Abstract: Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.