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公开(公告)号：US09470986B2
公开(公告)日：2016-10-18
申请号：US14190036
申请日：2014-02-25
Applicant: ASML Netherlands B.V.
Inventor： Andreas Fuchs , Maurits Van Der Schaar , Scott Anderson Middlebrooks , Panagiotis Pieter Bintevinos
IPC: G03F7/20 , G01N21/956
CPC classification number: G03F7/70633 , G01N21/956
Abstract: A method for determining overlay error includes measuring asymmetry of radiation reflected from each of a plurality of targets on a substrate. The plurality of targets include a predetermined overlay offset. The method also includes comparing the measured asymmetry of the radiation reflected from each of the plurality of targets to the corresponding predetermined overlay offset of the respective target. Additionally, the method includes determining the overlay error of a point on the substrate as a function of measured asymmetry reflected from the point. The function is determined by fitting a polynomial or a Fourier series to a comparison of the measured asymmetry of the radiation reflected from each of the plurality of targets to the corresponding predetermined overlay offset of the respective target. The function limits an effect of linearity error.
Abstract translation: 用于确定覆盖误差的方法包括测量从衬底上的多个靶中的每一个反射的辐射的不对称性。 多个目标包括预定的覆盖偏移。 该方法还包括将从多个目标中的每一个反射的辐射的测量的不对称性与相应目标的对应的预定叠加偏移进行比较。 另外，该方法包括根据从该点反射的测量的不对称性来确定衬底上的点的重叠误差。 通过将多项式或傅里叶级数拟合到从多个目标中的每一个反射的辐射的测量的不对称与相应目标的对应的预定叠加偏移的比较来确定该功能。 该功能限制了线性误差的影响。
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12.发明授权公开(公告)号：US09255892B2
公开(公告)日：2016-02-09
申请号：US14825765
申请日：2015-08-13
Applicant: ASML Netherlands B.V.
IPC: G01B11/00 , G01B11/14 , G03B27/32 , H01L23/544 , G01N21/95 , G03F7/20 , G01N21/47 , G02B5/18 , G03F9/00
CPC classification number: G01N21/9501 , G01N21/4738 , G01N2201/06113 , G01N2201/10 , G02B5/1823 , G02B5/1861 , G03F7/70058 , G03F7/70633 , G03F7/70683 , G03F9/70 , G03F9/7046 , G03F9/7076 , H01L23/544 , H01L2924/0002 , Y10T428/24612 , H01L2924/00
Abstract: A second set of superimposed gratings are superposed over a first set of superimposed gratings. The second set of gratings have a different periodicity from the first set of gratings or a different orientation. Consequently the first order diffraction pattern from the second set of superimposed gratings can be distinguished from the first order diffraction pattern from the first set of superimposed gratings.
Abstract translation: 第二组叠加的光栅叠加在第一组叠加的光栅上。 第二组光栅具有与第一组光栅不同的周期性或不同的取向。 因此，来自第二组叠加光栅的一阶衍射图可以与来自第一组叠加光栅的一阶衍射图案区分开。
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13.发明授权公开(公告)号：US12066764B2
公开(公告)日：2024-08-20
申请号：US18143825
申请日：2023-05-05
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Patrick Warnaar , Vasco Tomas Tenner , Maurits Van Der Schaar
IPC: G03F7/00 , G01R31/265
CPC classification number: G03F7/706839 , G01R31/2656 , G03F7/70633
Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.
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公开(公告)号：US12019377B2
公开(公告)日：2024-06-25
申请号：US17299531
申请日：2019-12-04
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Olger Victor Zwier , Patrick Warnaar
CPC classification number: G03F7/70633 , G01N21/4788 , G03F7/70683
Abstract: A target for determining a performance parameter of a lithographic process, the target comprising a first sub-target formed by at least two overlapping gratings, wherein the underlying grating of the first sub-target has a first pitch and the top lying grating of the first sub-target has a second pitch, at least a second sub-target formed by at least two overlapping gratings, wherein the underlying grating of the second sub-target has a third pitch and the top lying grating of the second sub-target has a fourth pitch.
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公开(公告)号：US11429029B2
公开(公告)日：2022-08-30
申请号：US17081325
申请日：2020-10-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Maurits Van Der Schaar , Patrick Warnaar , Youping Zhang , Arie Jeffrey Den Boef , Feng Xiao , Martin Ebert
Abstract: A method includes projecting an illumination beam of radiation onto a metrology target on a substrate, detecting radiation reflected from the metrology target on the substrate, and determining a characteristic of a feature on the substrate based on the detected radiation, wherein a polarization state of the detected radiation is controllably selected to optimize a quality of the detected radiation.
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Patent Agency Ranking
公开(公告)号：US20220113638A1
公开(公告)日：2022-04-14
申请号：US17559710
申请日：2021-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing Chen , Wei Liu , Maurits Van Der Schaar
Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter of a metrology target design to a perturbation of a process parameter for forming, or measuring the formation of, the metrology target, and determining a robustness of the metrology target design based on the sum of the sensitivity multiplied by the perturbation of at least one of the process parameters.
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公开(公告)号：US11092900B2
公开(公告)日：2021-08-17
申请号：US16675674
申请日：2019-11-06
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Youping Zhang , Hendrik Jan Hidde Smilde , Anagnostis Tsiatmas , Adriaan Johan Van Leest , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
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公开(公告)号：US10996570B2
公开(公告)日：2021-05-04
申请号：US16594613
申请日：2019-10-07
Applicant: ASML Netherlands B.V.
Inventor： Zili Zhou , Nitesh Pandey , Olger Victor Zwier , Patrick Warnaar , Maurits Van Der Schaar , Elliott Gerard McNamara , Arie Jeffrey Den Boef , Paul Christiaan Hinnen , Murat Bozkurt , Joost Jeroen Ottens , Kaustuve Bhattacharyya , Michael Kubis
IPC: G03F7/20 , G01N21/47 , G01N21/95 , G01N21/956 , G03F9/00
Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.
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19.发明授权公开(公告)号：US10859923B2
公开(公告)日：2020-12-08
申请号：US16792267
申请日：2020-02-16
Applicant: ASML Netherlands B.V.
Inventor： Gonzalo Roberto Sanguinetti , Murat Bozkurt , Maurits Van Der Schaar , Arie Jeffrey Den Boef
Abstract: Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.
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公开(公告)号：US10578980B2
公开(公告)日：2020-03-03
申请号：US16465161
申请日：2017-11-23
Applicant: ASML NETHERLANDS B.V.
Inventor： Ralph Timotheus Huijgen , Marc Jurian Kea , Marcel Theodorus Maria Van Kessel , Masashi Ishibashi , Chi-Hsiang Fan , Hakki Ergün Cekli , Youping Zhang , Maurits Van Der Schaar , Liping Ren
IPC: G03B27/32 , G03F7/20 , G01N21/956 , G03F9/00
Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.
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