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公开(公告)号：US11982946B2
公开(公告)日：2024-05-14
申请号：US17628668
申请日：2020-07-06
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： Nikhil Mehta , Maurits Van Der Schaar , Markus Gerardus Martinus Maria Van Kraaij , Hugo Augustinus Joseph Cramer , Olger Victor Zwier , Jeroen Cottaar , Patrick Warnaar
IPC: G03F7/20 , G01N21/956 , G03F1/84 , G03F7/00
CPC classification number: G03F7/70625 , G01N21/956 , G03F1/84 , G03F7/70633
Abstract: A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.
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公开(公告)号：US20230185990A1
公开(公告)日：2023-06-15
申请号：US18095515
申请日：2023-01-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Lotte Marloes Willems , Kaustuve Bhattacharyya , Panagiotis Pieter Bintevinos , Guangqing Chen , Martin Ebert , Pieter Jacob Mathias Hendrik Knelissen , Stephen Morgan , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Jen-Shiang Wang , Peter Hanzen Wardenier
CPC classification number: G06F30/20 , G03F7/705 , G03F7/70625 , G03F7/70683 , G03F7/70633 , G03F9/7046 , G06F2111/10
Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.
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公开(公告)号：US11003099B2
公开(公告)日：2021-05-11
申请号：US16593132
申请日：2019-10-04
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Murat Bozkurt , Patrick Warnaar , Stefan Cornelis Theodorus Van Der Sanden
IPC: G03F9/00 , G03F7/20 , G01N21/956
Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.
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公开(公告)号：US10955353B2
公开(公告)日：2021-03-23
申请号：US16270155
申请日：2019-02-07
Applicant: ASML Netherlands B.V.
Inventor： Arie Jeffrey Den Boef , Arno Jan Bleeker , Youri Johannes Laurentius Maria Van Dommelen , Mircea Dusa , Antoine Gaston Marie Kiers , Paul Frank Luehrmann , Henricus Petrus Maria Pellemans , Maurits Van Der Schaar , Cedric Desire Grouwstra , Markus Gerardus Martinus Maria Van Kraaij
Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
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公开(公告)号：US10481503B2
公开(公告)日：2019-11-19
申请号：US15237246
申请日：2016-08-15
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Youping Zhang , Hendrik Jan Hidde Smilde , Anagnostis Tsiatmas , Adriaan Johan Van Leest , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
Abstract: A substrate has first and second target structures formed by a lithographic process. Each target structure has a two-dimensional periodic structure formed in a single layer using first and second lithographic steps. The first target structure has features defined in the second lithographic step displaced relative to features defined in the first lithographic step by a first bias amount. The second target structure has features defined in the second lithographic step displaced relative to features defined in the first lithographic step by a second bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained. A measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
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Patent Agency Ranking
公开(公告)号：US10474043B2
公开(公告)日：2019-11-12
申请号：US15841811
申请日：2017-12-14
Applicant: ASML Netherlands B.V.
Inventor： Patrick Warnaar , Maurits Van Der Schaar , Grzegorz Grzela , Erik Johan Koop , Victor Emanuel Calado , Si-Han Zeng
Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured Wt times, where Wt is an integer greater than 2 so as to obtain N*Wt measurement values; and determining R property values using Q equations and the N*Wt measurement values, where R
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公开(公告)号：US20190072496A1
公开(公告)日：2019-03-07
申请号：US16114629
申请日：2018-08-28
Applicant: ASML Netherlands B.V.
IPC: G01N21/88 , G01N21/956 , G03F7/20 , G01N21/47
Abstract: Multilayered product structures are formed on substrates by a combination of patterning steps, physical processing steps and chemical processing steps. An inspection apparatus illuminates a plurality of target structures and captures pupil images representing the angular distribution of radiation scattered by each target structure. The target structures have the same design but are formed at different locations on a substrate and/or on different substrates. Based on a comparison of the images the inspection apparatus infers the presence of process-induced stack variations between the different locations. In one application, the inspection apparatus separately measures overlay performance of the manufacturing process based on dark-field images, combined with previously determined calibration information. The calibration is adjusted for each target, depending on the stack variations inferred from the pupil images.
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公开(公告)号：US10126662B2
公开(公告)日：2018-11-13
申请号：US15912036
申请日：2018-03-05
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson Middlebrooks , Niels Geypen , Hendrik Jan Hidde Smilde , Alexander Straaijer , Maurits Van Der Schaar , Markus Gerardus Martinus Maria Van Kraaij
IPC: G03F7/20
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
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公开(公告)号：US09594311B2
公开(公告)日：2017-03-14
申请号：US14335711
申请日：2014-07-18
Applicant: ASML Netherlands B.V.
Inventor： Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar , Andreas Fuchs , Martyn John Coogans
CPC classification number: G03F7/7065 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G03F7/70633 , G03F9/7049 , G03F9/7088
Abstract: The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured. The intensity of each of the first diffraction orders from the diffraction spectrum are compared to determine overlay (or other properties) of exposed layers on the substrate.
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10.发明授权Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 有权检测方法和装置，光刻设备，光刻处理单元和器件制造方法公开(公告)号：US09594310B2
公开(公告)日：2017-03-14
申请号：US14335702
申请日：2014-07-18
Applicant: ASML Netherlands B.V.
Inventor： Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar , Andreas Fuchs , Martyn John Coogans
CPC classification number: G03F7/7065 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G03F7/70633 , G03F9/7049 , G03F9/7088
Abstract: The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured. The intensity of each of the first diffraction orders from the diffraction spectrum are compared to determine overlay (or other properties) of exposed layers on the substrate.
Abstract translation: 本发明使用在图像平面内或附近测量衍射光谱，以便确定曝光的基底的性质。 特别地，正和负的第一衍射级被分离或分离，检测并测量它们的强度。 比较来自衍射光谱的每个第一衍射级的强度，以确定衬底上的暴露层的覆盖（或其它性质）。
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