公开(公告)号：EP4127834A1

公开(公告)日：2023-02-08

申请号：EP21707304.8

申请日：2021-03-01

Applicant: ASML Netherlands B.V.

Inventor： KOULIERAKIS, Eleftherios ,  LANCIA, Carlo ,  GONZALEZ HUESCA, Juan Manuel ,  YPMA, Alexander ,  GKOROU, Dimitra ,  SAHRAEIAN, Reza

IPC: G03F7/20

公开(公告)号：EP3994525A1

公开(公告)日：2022-05-11

申请号：EP20730276.1

申请日：2020-06-05

Applicant: ASML Netherlands B.V.

Inventor： BASTANI, Vahid ,  SONNTAG, Dag ,  SAHRAEIAN, Reza ,  GKOROU, Dimitra

IPC: G03F7/20 ,  G05B19/418 ,  H01L21/66

公开(公告)号：EP3945548A1

公开(公告)日：2022-02-02

申请号：EP20188698.3

申请日：2020-07-30

Applicant: ASML Netherlands B.V.

Inventor： GKOROU, Dimitra ,  BASTANI, Vahid ,  SAHRAEIAN, Reza ,  TABERY, Cyrus, Emil

IPC: H01L21/66 ,  G03F7/20 ,  G05B19/418 ,  G05B23/02

Abstract: Methods and apparatus for classifying semiconductor wafers. The method comprises: sorting a set of semiconductor wafers, using a model, into a plurality of sub-sets based on parameter data corresponding to one or more parameters of the set of semiconductor wafers, wherein the parameter data for semiconductor wafers in a sub-set include one or more common characteristics; identifying one or more semiconductor wafers within a sub-set based on a probability of the one or more semiconductor wafers being correctly allocated to the sub-set; comparing the parameter data of the one or more identified semiconductor wafers to reference parameter data; and reconfiguring the model based on the comparison. The comparison is undertaken by a human to provide constraints for the model. The apparatus is configured to undertake the method.

公开(公告)号：EP3913435A1

公开(公告)日：2021-11-24

申请号：EP20175361.3

申请日：2020-05-19

Applicant: ASML Netherlands B.V.

Inventor： SAHRAEIAN, Reza ,  BASTANI, Vahid ,  GKOROU, Dimitra ,  DOS SANTOS GUZELLA, Thiago

IPC: G03F7/20 ,  G06N5/04

Abstract: Apparatus and methods of configuring an imputer model for imputing a second parameter. The method comprises inputting a first data set comprising values of a first parameter to the imputer model, and evaluating the imputer model to obtain a second data set comprising imputed values of the second parameter. The method further comprises obtaining a third data set comprising measured values of a third parameter, wherein the third parameter is correlated to the second parameter; obtaining a prediction model configured to infer values of the third parameter based on inputting values of the second parameter; inputting the second data set to the prediction model, and evaluating the prediction model to obtain inferred values of the third parameter; and configuring the imputer model based on a comparison of the inferred values and the measured values of the third parameter.

公开(公告)号：EP4244675A1

公开(公告)日：2023-09-20

申请号：EP21799267.6

申请日：2021-10-26

Applicant: ASML Netherlands B.V.

Inventor： WERKMAN, Roy ,  WILDENBERG, Jochem, Sebastiaan ,  SAHRAEIAN, Reza

IPC: G03F7/20

公开(公告)号：EP4182967A1

公开(公告)日：2023-05-24

申请号：EP21734332.6

申请日：2021-06-21

Applicant: ASML Netherlands B.V.

Inventor： GKOROU, Dimitra ,  BASTANI, Vahid ,  SAHRAEIAN, Reza ,  TABERY, Cyrus, Emil

IPC: H01L21/66 ,  G03F7/20 ,  G05B19/418 ,  G05B23/02

公开(公告)号：EP4050328A1

公开(公告)日：2022-08-31

申请号：EP21159169.8

申请日：2021-02-25

Applicant: ASML Netherlands B.V.

Inventor： DOS SANTOS GUZELLA, Thiago ,  ISHIBASHI, Masashi ,  SANNO, Noriaki ,  BASTANI, Vahid ,  SAHRAEIAN, Reza ,  SAPUTRA, Putra

IPC: G01N21/956 ,  G03F7/20 ,  G05B19/418 ,  G06N20/00 ,  H01L21/66

Abstract: Described is a method for determining a spatially varying process offset for a lithographic process, the spatially varying process offset varying over a substrate subject to the lithographic process to form one or more structures thereon. The method comprises obtaining a trained model, having been trained to predict first metrology data based on second metrology data, wherein the first metrology data is spatially varying metrology data which relates to a first type of measurement of said structures being a measure of yield and said second metrology data is spatially varying metrology data which relates to a second type of measurement of said structures and correlates with said first metrology data; and using said model to obtain said spatially varying process offset.

公开(公告)号：EP3767392A1

公开(公告)日：2021-01-20

申请号：EP19186833.0

申请日：2019-07-17

Applicant: ASML Netherlands B.V.

Inventor： BASTANI, Vahid ,  SONNTAG, DAG ,  SAHRAEIAN, Reza ,  GKOROU, Dimitra

IPC: G03F7/20 ,  G05B19/418 ,  H01L21/66

Abstract: A method of determining the contribution of a process feature to the performance of a process of patterning substrates. The method may comprise obtaining (402) a first model trained on first process data and first performance data. One or more substrates may be identified (404) based on a quality of prediction of the first model when applied to process data associated with the one or more substrates. A second model may be trained (406) on second process data and second performance data associated with the identified one or more substrates. The second model may be used (408) to determine the contribution of a process feature of the second process data to the second performance data associated with the one or more substrates.