Abstract:
A lithographic process includes clamping (CL) a substrate (W) onto a substrate support (WT), measuring (AS) positions of marks across the clamped substrate, and applying a pattern to the clamped using the positions measured. A correction (WCOR) is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic (402, 404, 406) in the positions measured across the substrate. In one embodiment the correction is generated by firstly inferring one or more shape characteristics of the warped substrate (FFW) using the measured positions and other information (CDAT). Then, based on the inferred shape characteristics, a clamping model is applied (WCM) to simulate deformation of the warped substrate in response to clamping. Thirdly said correction (LCOR) is calculated based on the simulated deformation. Some or all of these steps may be integrated and/or implemented by a look-up table.
Abstract:
Described is a method for determining a spatially varying process offset for a lithographic process, the spatially varying process offset (MTD) varying over a substrate subject to the lithographic process to form one or more structures thereon. The method comprises obtaining a trained model (MOD), having been trained to predict first metrology data based on second metrology data, wherein the first metrology data (OV) is spatially varying metrology data which relates to a first type of measurement of said structures being a measure of yield and said second metrology data (PB) is spatially varying metrology data which relates to a second type of measurement of said structures and correlates with said first metrology data; and using said model to obtain said spatially varying process offset (MTD).
Abstract:
The present invention provides a method, system and program for determining a position of a feature referenced to a substrate. The method comprises measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate comprising the feature, or another layer of the substrate, or another layer of another substrate. The present invention also provides a method, system and program for controlling positioning of a substrate.
Abstract:
Measurements are obtained from locations across a substrate (W') before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of performance parameters such as overlay, after a pattern has been applied. A set of measurement locations (606, 606' or 606") is selected from among all possible measurement locations (302). At least a subset of the selected measurement locations are selected dynamically (202c), in response to measurements obtained using a preliminary selection (610) of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect of the disclosure, outlier measurements are detected based on supplementary data such as height measurements or historic data.
Abstract:
Described is a method for determining a spatially varying process offset for a lithographic process, the spatially varying process offset varying over a substrate subject to the lithographic process to form one or more structures thereon. The method comprises obtaining a trained model, having been trained to predict first metrology data based on second metrology data, wherein the first metrology data is spatially varying metrology data which relates to a first type of measurement of said structures being a measure of yield and said second metrology data is spatially varying metrology data which relates to a second type of measurement of said structures and correlates with said first metrology data; and using said model to obtain said spatially varying process offset.