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    Method of simulating formation of lithography features by self-assembly of block copolymers
    11.
    发明授权
    Method of simulating formation of lithography features by self-assembly of block copolymers 有权

    公开(公告)号：US10127336B2

    公开(公告)日：2018-11-13

    申请号：US14890867

    申请日：2014-05-05

    Applicant: ASML Netherlands B.V.

    Inventor： Sander Frederik Wuister ,  Tamara Druzhinina ,  Jan Van Male ,  Joanne Klein-Wolterink ,  Davide Ambesi

    IPC: G06F17/50 ,  G06F7/00 ,  G03F7/00

    Abstract: A method of determining an uncertainty in the position of a domain within a self-assembly block copolymer (BCP) feature. The method includes simulating a BCP feature, calculating a minimum energy position of a first domain within the simulated BCP feature, simulating the application of a potential that causes the position of the first domain to be displaced from the minimum energy position, simulating release of the potential back toward the minimum energy, recording a plurality of energies of the BCP feature during the release and recording at each of the plurality of energies a displacement of the first domain from the minimum energy position, calculating, from the recorded energies and recorded displacements, a probability distribution indicating a probability of the first domain being displaced from the minimum energy position, and, from the probability distribution, calculating an uncertainty in the position of the first domain within the BCP feature.

    Methods and compositions for providing spaced lithography features on a substrate by self-assembly of block copolymers
    14.
    发明授权
    Methods and compositions for providing spaced lithography features on a substrate by self-assembly of block copolymers 有权
    通过嵌段共聚物的自组装在基材上提供间隔光刻特征的方法和组合物

    公开(公告)号：US09250528B2

    公开(公告)日：2016-02-02

    申请号：US14391156

    申请日：2013-03-19

    Applicant: ASML Netherlands B.V.

    Inventor： Sander Frederik Wuister ,  Emiel Peeters

    IPC: G03F7/20 ,  C08L53/00 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00

    CPC classification number: G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  G03F7/0002

    Abstract: A method is disclosed to form a row of mutually spaced elongate lithography features along an axis on a substrate, for instance for use as contact electrodes for a NAND device. The method involves directing alignment of self-assemblable block copolymer (BCP) composition in a trench in a resist layer on the substrate, having the substrate as base, with an epitaxy feature in the trench to cause the ordered BCP layer to have elongate domains stretching across the trench width, substantially parallel to each other and to the substrate. The ordered BCP layer is then used as a resist to pattern the substrate. A BCP composition adapted to assemble with spaced discontinuous elongate elliptical domains is disclosed. The method may allow for sub-resolution contact arrays to be formed using UV lithography.

    Abstract translation: 公开了一种形成沿衬底上的轴线的相互间隔的细长光刻特征行的方法，例如用作NAND器件的接触电极。 该方法包括将自组装嵌段共聚物（BCP）组合物引导到衬底上的抗蚀剂层的沟槽中，其具有衬底作为基底，在沟槽中具有外延特征，以使有序的BCP层具有伸长的畴伸长 横跨沟槽宽度，基本上彼此平行并且与基底平行。 然后将有序的BCP层用作抗蚀剂以对基底进行图案化。 公开了适于与间隔不连续的细长椭圆域组装的BCP组合物。 该方法可以允许使用UV光刻形成亚分辨率接触阵列。

    METHODS OF PROVIDING PATTERNED TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY
    16.
    发明申请
    METHODS OF PROVIDING PATTERNED TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY 有权
    提供用于自组装块式共聚物的图案模式的方法用于器件平台的使用

    公开(公告)号：US20150034594A1

    公开(公告)日：2015-02-05

    申请号：US14385047

    申请日：2013-03-06

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Harmeet Singh ,  Vadim Yevgenyevich Banine ,  Jozef Maria Finders ,  Sander Frederik Wuister ,  Roelof Koole ,  Emiel Peeters

    IPC: G03F7/16 ,  G03F7/20 ,  G03F7/40 ,  G03F7/30

    CPC classification number: G03F7/162 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/165 ,  G03F7/2022 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027

    Abstract: A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.

    Abstract translation: 公开了一种在基底上形成图案化模板以引导自组装嵌段共聚物的取向的方法。 该方法包括在衬底上提供正色调抗蚀剂的抗蚀剂层，并通过光刻法用光化（例如UV）辐射过度曝光抗蚀剂，以在抗蚀剂层的连接区域之间的界面处暴露抗蚀剂层的亚分辨率未曝光抗蚀剂部分 抗蚀剂和基材。 在除去暴露区域之后残留在界面处的抗蚀剂部分为化学外延模板提供了基础。 该方法可以允许简单的直接光刻以形成图案化的化学外延模板，并且可选地包括精确地共同对准的图案电子特征和/或衬底对准特征。

    Method for controlling a manufacturing apparatus and associated apparatuses
    18.
    发明授权
    Method for controlling a manufacturing apparatus and associated apparatuses 有权

    公开(公告)号：US11016399B2

    公开(公告)日：2021-05-25

    申请号：US16765595

    申请日：2018-12-10

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Marleen Kooiman ,  Sander Frederik Wuister

    IPC: G03F7/20 ,  G01N21/956

    Abstract: A method of predicting the dominant failure mode and/or the failure rate of a plurality of features formed on a substrate, and an associated inspection apparatus. The method may include determining a placement metric for each feature, the placement metric including a measure of whether the feature is in an expected position, and comparing a distribution of the placement metric to a reference (e.g., Gaussian) distribution. The placement metric may include a boundary metric for a plurality of boundary points on a boundary defining each feature, the boundary metric including a measure of whether a boundary point is in an expected position. The dominant failure mode and/or the failure rate of the plurality of features is predicted from the comparison.

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