公开(公告)号：US11435671B2

公开(公告)日：2022-09-06

申请号：US16690633

申请日：2019-11-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Marleen Kooiman

IPC: G03F7/20 ,  G01N23/2251 ,  H01J37/26 ,  H01J37/285

Abstract: A method of reducing variability of an error associated with a structure on a substrate in a lithography process is disclosed. The method includes determining, based on one or more images obtained based on a scan of the substrate by a scanning electron microscope (SEM), a first error due to a SEM distortion in the image. The method also includes determining, based on the image, a second error associated with a real error of the structure, where the error associated with the structure includes the first error and the second error. A command is generated by a data processor that enables a modification of the lithography process and an associated reduction of the variability of the error based on reducing any of the first error or the second error.

公开(公告)号：US11016399B2

公开(公告)日：2021-05-25

申请号：US16765595

申请日：2018-12-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Marleen Kooiman ,  Sander Frederik Wuister

IPC: G03F7/20 ,  G01N21/956

Abstract: A method of predicting the dominant failure mode and/or the failure rate of a plurality of features formed on a substrate, and an associated inspection apparatus. The method may include determining a placement metric for each feature, the placement metric including a measure of whether the feature is in an expected position, and comparing a distribution of the placement metric to a reference (e.g., Gaussian) distribution. The placement metric may include a boundary metric for a plurality of boundary points on a boundary defining each feature, the boundary metric including a measure of whether a boundary point is in an expected position. The dominant failure mode and/or the failure rate of the plurality of features is predicted from the comparison.

公开(公告)号：US11966167B2

公开(公告)日：2024-04-23

申请号：US16771343

申请日：2018-12-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Marleen Kooiman ,  David Marie Rio ,  Sander Frederik Wuister

IPC: G03F7/00

CPC classification number: G03F7/705 ,  G03F7/70666 ,  G03F7/706839

Abstract: A method for calibrating a resist model. The method includes: generating a modeled resist contour of a resist structure based on a simulated aerial image of the resist structure and parameters of the resist model, and predicting a metrology contour of the resist structure from the modeled resist contour based on information of an actual resist structure obtained by a metrology device. The method includes adjusting one or more of the parameters of the resist model based on a comparison of the predicted metrology contour and an actual metrology contour of the actual resist structure obtained by the metrology device.