公开(公告)号：JP2004343044A

公开(公告)日：2004-12-02

申请号：JP2003436600

申请日：2003-12-16

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： DEN BOEF ARIE JEFFREY ,  MOS EVERHARDUS CORNELIS ,  SCHAAR MAURITS VAN DER

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC classification number: G03F9/7019 ,  G03F9/7011

Abstract: PROBLEM TO BE SOLVED: To provide a method of correcting accurately the errors caused by an alignment discrepancy generated when performing the alignment of a substrate after its processing, even though no calibrating measurement extending over a wide range is performed. SOLUTION: During manufacturing a device, a beam of radiation is projected onto a substrate via a mask. The substrate is aligned with the mask by using an alignment structure on the substrate. The characteristic of the light reflected by the alignment structure is used for determining the relative position of the substrate. The preceding processing of the substrate generates potentially errors in the position determined by the reflection light. The measurement of the characteristic of the reflection light is used for determining the correcting extent required to correct the errors generated by the processing of the substrate. Preferably, the parameters of a physical model of the alignment structure may be estimated from the reflection light, and it is preferred to use them for determining the corrections of the errors. Preferably, it is preferred to measure a plurality of amplitudes of different diffraction peaks for determining the corrections of the errors. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2002319544A

公开(公告)日：2002-10-31

申请号：JP2002097335

申请日：2002-02-22

Applicant: ASML NETHERLANDS BV

Inventor： MOS EVERHARDUS CORNELIS ,  VAN DER SCHAAR MAURITS

IPC: G03F9/00 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a computer program for determining a corrected position of a measured alignment mark P on a substrate W which is exposed in a lithographic projection apparatus. SOLUTION: The computer program is provided to determine a corrected position of an alignment mark P on the substrate W which is exposed in the lithographic projection apparatus. In the case where the computer program is run on a computer system, in order to measure the position of at least one alignment mark P on the substrate W on which an aluminum Al layer is coated, a program code means, which commands the computer system, is contained to perform a stage for control a measuring device, and a stage for calculating a corrected position of the alignment mark based on the measurement position of the alignment mark and a model of a working device engaged in coating of the aluminum layer.

公开(公告)号：JP2011003894A

公开(公告)日：2011-01-06

申请号：JP2010129556

申请日：2010-06-07

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： SCHOUMANS NICOLE ,  MOS EVERHARDUS CORNELIS ,  HEPP BIRGITT NOELLE CORNELIA LIDUINE ,  GROENENDIJK REMCO JOCHEM SEBASTIAAN

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70616 ,  G03F7/705 ,  G03F7/70608

Abstract: PROBLEM TO BE SOLVED: To provide a method for obtaining information which is used when modeling lithography process, and to provide a lithography structure for executing the lithographic method.SOLUTION: The method of obtaining information to be used for modeling of lithography process is provided. A pattern feature can be formed to a target part of substrate by projecting a beam PB to the target part of the substrate. The lithographic process is featured for the target part with any one of a first property, showing change in a first direction along the front surface of substrate and a second property showing changes in a second direction, along the front surface of substrate or with both the first and second properties. The properties of the pattern feature are measured, and information to be used for modeling the process can be obtained, by using the property of measured pattern feature and at least either the first property or the second property of the lithography process. The lithographic process may be a projection of a beam to the front surface of substrate, or may include such a projection of beam.

Abstract translation: 要解决的问题：提供一种获取在光刻工艺建模时使用的信息的方法，并提供用于执行光刻方法的光刻结构。解决方案：提供获得用于光刻工艺建模的信息的方法。 可以通过将光束PB投射到基板的目标部分来形成到基板的目标部分的图案特征。 光刻工艺的特征在于具有第一特性中的任一个的目标部分，沿着基板的前表面显示沿第一方向的变化，以及沿着基板的前表面显示沿第二方向的变化的第二特性， 第一和第二属性。 测量图案特征的属性，并且可以通过使用测量图案特征的属性和光刻过程的至少第一属性或第二属性来获得用于建模过程的信息。 光刻工艺可以是将光束投射到衬底的前表面，或者可以包括这样的光束投影。

公开(公告)号：JP2010251798A

公开(公告)日：2010-11-04

申请号：JP2010161443

申请日：2010-07-16

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： DEN BOEF ARIE JEFFREY ,  MOS EVERHARDUS CORNELIS ,  SCHAAR MAURITS VAN DER

IPC: H01L21/027 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01N21/27 ,  G01N21/47 ,  G01N21/956 ,  G03F7/20

CPC classification number: G03F7/70633

Abstract: PROBLEM TO BE SOLVED: To provide a method of identifying a false low overlay calculation. SOLUTION: Both the first and the 0-th order of diffraction are detected with a scatterometer. The first order of diffraction is used to detect an overlay error. Then, if this is a false overlay error calculation of magnitude greater than the bias but smaller than the pitch of the diffraction grating, then, the 0-th order of diffraction is used to flag. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种识别虚假低覆盖计算的方法。

解决方案：用散射仪检测第一和第0级的衍射。 衍射的一阶用于检测叠加误差。 然后，如果这是大于偏置但小于衍射光栅的间距的幅度的错误叠加误差计算，则使用0阶衍射来标记。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2009152558A

公开(公告)日：2009-07-09

申请号：JP2008279686

申请日：2008-10-30

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： VAN BILSEN FRANCISCUS BERNARDU ,  MOS EVERHARDUS CORNELIS

IPC: H01L21/027 ,  G03F9/00

CPC classification number: G03F9/7046 ,  G03F9/7003

Abstract: PROBLEM TO BE SOLVED: To improve throughput of a method of determining the position of fields of a substrate.
SOLUTION: This lithographic method includes steps of: determining relative positional relationships between fields on a substrate, one of the fields including a first field; in a lithographic apparatus, using an alignment apparatus to obtain at least one absolute positional relationship between the position of at least the first field of the substrate and a part of the lithographic apparatus; and determining an absolute positional relationship between at least one field, other than the first field, and the part of the lithographic apparatus using the relative positional relationships and the at least one obtained absolute relationship.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提高确定衬底的场的位置的方法的生产量。 解决方案：该光刻方法包括以下步骤：确定衬底上的场之间的相对位置关系，其中一个场包括第一场; 在光刻设备中，使用对准装置获得至少基板的第一场的位置与光刻设备的一部分之间的至少一个绝对位置关系; 以及使用所述相对位置关系和所述至少一个所获得的绝对关系，确定除了所述第一场以外的至少一个场与所述光刻设备的所述部分之间的绝对位置关系。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008047900A

公开(公告)日：2008-02-28

申请号：JP2007206106

申请日：2007-08-08

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： DEN BOEF ARIE JEFFREY ,  DUSA MIRCEA ,  MOS EVERHARDUS CORNELIS ,  SCHAAR MAURITS VAN DER ,  KEIJ STEFAN CAROLUS J A

IPC: H01L21/027

CPC classification number: G03F7/70633

Abstract: PROBLEM TO BE SOLVED: To provide a simple, alternative method decreasing an influence due to the asymmetric diversity of a sensor.
SOLUTION: A test system projects multiple radiation beams with different wavelengths and/or polarized radiations onto two targets. A first radiation beam is projected onto a first target to detect a reflected radiation A
1+ . The first target contains two diffraction gratings each of which has a bias of +d for the other. The first radiation beam is also projected onto a second target which contains two diffraction gratings each of which has a bias of -d for the other to detect a reflected radiation A
1- . A second radiation beam with a wavelength and/or a polarized radiation different from those of the first radiation beam is projected onto the first target to detect a reflected radiation A
2+ . The second radiation beam is also projected on the second target to detect a reflected radiation A
2- . The detected radiations A
1+ , A
1- , A
2+ and A
2- are used to determine an overlay error.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种简单的替代方法，减少由于传感器的不对称多样性引起的影响。

解决方案：测试系统将具有不同波长和/或极化辐射的多个辐射束投射到两个目标上。 将第一辐射束投影到第一靶上以检测反射辐射A 1 SB 1 + 。 第一个靶包含两个衍射光栅，每个衍射光栅的另一个具有+ d的偏置。 第一辐射束也被投射到包含两个衍射光栅的第二靶上，每个衍射光栅都具有-d的偏置，另一个具有用于另一个的偏转，以检测反射的辐射A 1。 将具有与第一辐射束不同的波长和/或偏振辐射的第二辐射束投影到第一靶上以检测反射辐射A SB 2 + 。 第二辐射束也投射在第二靶上以检测反射辐射A 2 SB。 使用检测到的辐射A 1 + ，A 1 - ，A 2 + 和A 2 - 重叠错误。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2008021984A

公开(公告)日：2008-01-31

申请号：JP2007156383

申请日：2007-06-13

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： SCHAAR MAURITS VAN DER ,  DEN BOEF ARIE JEFFREY ,  MOS EVERHARDUS CORNELIS ,  KEIJ STEFAN CAROLUS J A

IPC: H01L21/027 ,  G03F9/00

CPC classification number: G03F9/7076 ,  G03F7/70633

Abstract: PROBLEM TO BE SOLVED: To provide an overlay system capable of recognizing overlay error, being larger than the pitch of an overlay marker lattice, relating to alignment of a projection exposure.
SOLUTION: The overlay target on a substrate comprises two pairs of lattices. A first pair has a pitch P1, and a second pair has a pitch P2, with each pair containing a lattice oriented almost vertical to the first lattice. When a resist layer is aligned with a layer below it, the same overlay mark is provided on the upper layer. The relative positions of the overlay targets on the upper and lower layers are compared each other by measuring diffraction spectrum after overlay beam is radiated on the overlay targets. By providing two pairs of overlay targets having different pitches in each lattice, such overlay error which is larger than either one pitch in the overlay lattice can be measured.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种覆盖系统，其能够识别与投影曝光的对准有关的重叠标记格子的间距大于重叠误差的重叠误差。 解决方案：衬底上的覆盖目标包括两对晶格。 第一对具有间距P1，第二对具有间距P2，每对包含几何垂直于第一格子的晶格。 当抗蚀剂层与其下面的层对准时，在上层上提供相同的覆盖标记。 通过在覆盖光束在覆盖目标上辐射之后测量衍射光谱，将覆盖目标在上层和下层上的相对位置进行比较。 通过在每个格子中提供具有不同间距的两对覆盖目标，可以测量大于覆盖网格中的任一个间距的覆盖误差。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2010166034A

公开(公告)日：2010-07-29

申请号：JP2009280123

申请日：2009-12-10

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： MOS EVERHARDUS CORNELIS ,  FINDERS JOZEF MARIA ,  MIDDLEBROOKS SCOTT ANDERSON ,  WANGLI DONGZI ,  DE MOL CHRISTIANUS GERARDUS MARIA ,  DUSA MIRCEA

IPC: H01L21/027 ,  H01L21/3065

CPC classification number: G03B27/42 ,  G03F7/705

Abstract: PROBLEM TO BE SOLVED: To provide a method of optimizing a method for double patterning.
SOLUTION: This optimization method records control variables such as a control dose and a focal point, in each of processes in a double patterning lithographic process, and measures characteristics of intermediate features such as a critical dimension and a sidewall angle in a double patterning process. Then, the final feature is modeled, and a disturbance between a measured value and a model is measured, and the values of the control variables are optimized.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种优化双重图案化方法的方法。

解决方案：该优化方法在双重图案化平版印刷工艺中的每个处理中记录诸如控制剂量和焦点的控制变量，并测量中间特征的特征，例如双重的临界尺寸和侧壁角度 图案化过程。 然后，对最终特征进行建模，并测量测量值和模型之间的干扰，并优化控制变量的值。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009094512A

公开(公告)日：2009-04-30

申请号：JP2008259704

申请日：2008-10-06

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： MOS EVERHARDUS CORNELIS ,  DEN BOEF ARIE JEFFREY ,  SCHAAR MAURITS VAN DER ,  KEIJ STEFAN CAROLUS J A

IPC: H01L21/027 ,  G01B11/00 ,  G03F9/00

CPC classification number: G03F9/7049 ,  G03F9/7015 ,  G03F9/7088

Abstract: PROBLEM TO BE SOLVED: To provide an improved alignment system capable of detecting the marker which has received process fluctuation, by allowing use of smaller alignment marker or radiation of different wavelength. SOLUTION: An alignment sensor comprises a spatial coherent radiation source which supplies radiation beam to an angle-resolved skiatrometer. The surface of pupil specifies an angle of incidence of the position of radial direction of radiation at a substrate while an angular position specifies the azimuth angle of radiation. A detector is preferable to be a two-dimensional detector so as to be capable of measuring the two-dimensional angular dispersion spectrum of a substrate target. Alignment is carried out by detecting beats in the dispersion spectrum during scanning the substrate with respect to the skiatrometer. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：通过允许使用较小的对准标记或不同波长的辐射，提供能够检测已经接收到过程波动的标记的改进的对准系统。 解决方案：对准传感器包括空间相干辐射源，其将辐射束提供给角度分辨的测角仪。 瞳孔表面指定基板处的辐射径向位置的入射角，而角位置指定辐射的方位角。 检测器优选为二维检测器，以便能够测量基板靶的二维角分散光谱。 通过在扫描基板期间相对于滑雪测定仪检测分散光谱中的拍子来进行对准。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008147654A

公开(公告)日：2008-06-26

申请号：JP2007310091

申请日：2007-11-30

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： MOS EVERHARDUS CORNELIS ,  SCHAAR MAURITS VAN DER ,  SIMONS HUBERTUS JOHANNES GERTR

IPC: H01L21/027

CPC classification number: G03F7/70725 ,  G03F7/70258 ,  G03F7/70358 ,  G03F7/70458 ,  G03F7/70525 ,  G03F7/70633 ,  G03F7/70783

Abstract: PROBLEM TO BE SOLVED: To provide an instrument and process that can reduce or correct the contribution of the strains or defects of a mask pattern to the strain of an exposure pattern.
SOLUTION: In the instrument for determining the process parameter of a process for generating an overlay pattern on a substrate, by applying a process model to a proposed process parameter and data, including a deduced overlay error between overlay patterns, the proposed overlay error corresponds to a process control, depending on the proposed value of the process parameter. Thus, the value determined for the process parameter corresponds to the minimum overlay error. The instrument determines the first value of the process parameter that generates the first portion of the overlay pattern in the first section of a target field, and a second value that is different from the first value of the process parameter for generating one of the second portion of the overlay pattern.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供可以减少或校正掩模图案的应变或缺陷对曝光图案的应变的贡献的仪器和工艺。 解决方案：在用于确定用于在衬底上生成覆盖图案的工艺的工艺参数的工具中，通过将工艺模型应用于所提出的工艺参数和数据，包括叠加图案之间的推导覆盖误差，所提出的覆盖 错误对应于过程控制，具体取决于过程参数的建议值。 因此，为过程参数确定的值对应于最小重叠误差。 仪器确定在目标场的第一部分中产生覆盖图案的第一部分的过程参数的第一值，以及不同于用于生成第二部分之一的过程参数的第一值的第二值 的覆盖图案。 版权所有（C）2008，JPO＆INPIT