公开(公告)号：US20220075275A1

公开(公告)日：2022-03-10

申请号：US17416314

申请日：2019-12-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Chrysostomos BATISTAKIS ,  Roger Josef Maria JEURISSEN ,  Koen Gerhardus WINKELS

IPC: G03F7/20 ,  G06F30/392

Abstract: A method for determining a deformation of a resist in a patterning process. The method involves obtaining a resist deformation model of a resist having a pattern, the resist deformation model configured to simulate a fluid flow of the resist due to capillary forces acting on a contour of at least one feature of the pattern; and determining, via the resist deformation model, a deformation of a resist pattern to be developed based on an input pattern to the resist deformation model.

公开(公告)号：US20200320238A1

公开(公告)日：2020-10-08

申请号：US16763376

申请日：2018-11-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Chrysostomos BATISTAKIS ,  Scott Anderson MIDDLEBROOKS ,  Sander Frederik WUISTER

IPC: G06F30/28 ,  G03F7/20

Abstract: A method involving obtaining a resist deformation model for simulating a deformation process of a pattern in resist, the resist deformation model being a fluid dynamics model configured to simulate an intrafluid force acting on the resist, performing, using the resist deformation model, a computer simulation of the deformation process to obtain a deformation of the developed resist pattern for an input pattern to the resist deformation model, and producing electronic data representing the deformation of the developed resist pattern for the input pattern.