Abstract:
There is an apparatus for cleaning a substrate mounted on a moveable platen. In an example embodiment, the apparatus comprises a first chamber, the first chamber has solvent-dispensing nozzles; the solvent-dispensing nozzles wet the substrate surface with a solvent as the platen transports the substrate. The platen moves in a predetermined direction and at a predetermined scan velocity as it transports the substrate into a process chamber. The process chamber has a hot source at a predetermined height from the substrate surface; it provides heat energy directed toward the substrate surface, the heat energy evaporates the solvent dispensed on the substrate surface; the solvent evaporation removes particulates from the substrate surface, as the platen transports the substrate from the first chamber into the process chamber. Substrates cleaned may include precision photo-masks, or wafers.
Abstract:
Apparatuses and methods for cleaning a surface comprising contaminate particles are provided. In one respect, plasma and/or a shockwave may be created in a fluid flowing through a nozzle. The nozzle, coupled to a laser source and a fluid feed may be configured to deliver the generated plasma and/or shockwave to the surface.
Abstract:
The present invention provides an apparatus and a method for an ultraviolet cleaning tool. The cleaning tool includes ultraviolet source spaced apart from a surface having contaminant particles. The ultraviolet source can create ozone between the surface and the ultraviolet source which breaks the chemical bonds between particles and the surface. The apparatus includes a gas feed which introduces a gas to aid the chemical bond. Additionally, the gas feed can introduce a gas to remove the particles from the surface.
Abstract:
There is an apparatus for cleaning a substrate (5) mounted on a moveable platen. In an example embodiment, the apparatus comprises a first chamber (20), the first chamber has solvent-dispensing nozzles (25); the solvent-dispensing nozzles wet the substrate surface (5) with a solvent (7) as the platen transports the substrate. The platen moves in a predetermined direction and at a predetermined scan velocity as it transports the substrate into a process chamber. The process chamber has a hot source (30) at a predetermined height (h) from the substrate surface (5); it provides heat energy directed toward the substrate surface, the heat energy evaporates the solvent (7) dispensed on the substrate surface; the solvent evaporation removes particulates (35) from the substrate surface, as the platen transports the substrate from the first chamber (20) into the process chamber. Substrates cleaned may include precision photo-masks, or wafers.
Abstract:
The present invention provides an apparatus and a method for an ultraviolet cleaning tool. The cleaning tool includes ultraviolet source spaced apart from a surface having contaminant particles. The ultraviolet source can create ozone between the surface and the ultraviolet source which breaks the chemical bonds between particles and the surface. The apparatus includes a gas feed which introduces a gas to aid the chemical bond. Additionally, the gas feed can introduce a gas to remove the particles from the surface.
Abstract:
Apparatuses and methods for cleaning a surface comprising contaminate particles are provided. In one respect, plasma and/or a shockwave may be created in a fluid flowing through a nozzle. The nozzle, coupled to a laser source and a fluid feed may be configured to deliver the generated plasma and/or shockwave to the surface.
Abstract:
An apparatus including a laser operating in different cleaning techniques is provided. In one embodiment, the laser interacts with the particle to remove the particle by expansion. In another embodiment, a liquid-assisted laser cleaning technique evaporates a liquid layer on the surface by laser pulses and subsequently removing the particles from the surface. Further, the present disclosure provides parameters to control the energy transfer to the particle. For example, for a shock wave generation parameters, the droplets size and concentration (e.g., pressure), substrate surface temperature, chemical composition of the droplets may be controlled.