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公开(公告)号：US20190115274A1
公开(公告)日：2019-04-18
申请号：US16077185
申请日：2017-02-10
Applicant: Apple Inc.
Inventor： Hsin-Hua Hu , Jaein Choi , James E. Pedder , Ion Bita , Hairong Tang , Chin Wei Hsu , Sandeep Chalasani , Chih-Lei Chen , Sunggu Kang , Shinya Ono , Jung Yen Huang , Lun Tsai
IPC: H01L23/31 , H01L23/00 , H01L25/075 , H01L25/16
Abstract: Micro LED and microdriver chip integration schemes are described. In an embodiment a microdriver chip includes a plurality of trenches formed in a bottom surface of the microdriver chip, with each trench surrounding a conductive stud extending below a bottom surface of the microdriver chip body. Integration schemes are additionally described for providing electrical connection to conductive terminal contacts and micro LEDs bonded to a display substrate and adjacent to a microdriver chip.
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公开(公告)号：US20180374831A1
公开(公告)日：2018-12-27
申请号：US16028611
申请日：2018-07-06
Applicant: Apple Inc.
Inventor： Kapil V. Sakariya , Andreas Bibl , Hsin-Hua Hu
Abstract: Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.
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公开(公告)号：US09831383B2
公开(公告)日：2017-11-28
申请号：US14071106
申请日：2013-11-04
Applicant: Apple Inc.
Inventor： Hsin-Hua Hu , Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law
CPC classification number: H01L33/08 , H01L21/67144 , H01L24/75 , H01L24/83 , H01L24/95 , H01L27/156 , H01L33/0079 , H01L33/405 , H01L2224/7598 , H01L2224/83 , H01L2224/95145 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.
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公开(公告)号：US20170125391A1
公开(公告)日：2017-05-04
申请号：US15405042
申请日：2017-01-12
Applicant: Apple Inc.
Inventor： John A. Higginson , Andreas Bibl , Hsin-Hua Hu
CPC classification number: H01L25/167 , H01L21/56 , H01L23/3171 , H01L25/0753 , H01L25/50 , H01L27/1214 , H01L27/1248 , H01L27/1262 , H01L33/005 , H01L33/06 , H01L33/42 , H01L33/44 , H01L33/54 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/005 , H01L2933/0066 , H01L2924/00
Abstract: A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.
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公开(公告)号：US20160163765A1
公开(公告)日：2016-06-09
申请号：US14563772
申请日：2014-12-08
Applicant: Apple Inc.
Inventor： Hsin-Hua Hu , Andreas Bibl
CPC classification number: H01L25/0753 , H01L27/156 , H01L33/44 , H01L33/62 , H01L51/0097 , H01L2224/24 , H01L2251/5338 , H01L2933/0025 , H01L2933/0033 , H01L2933/0066 , Y02E10/549 , Y02P70/521
Abstract: A conformable electronic device and methods for forming such devices are described. Embodiments of a conformable electronic device may include a silicon substrate having a thickness of 50 μm or less. An array of LEDs that are electrically coupled to a controller chip may be formed on a surface of the silicon substrate. In an embodiment, a top passivation layer is formed over the array of LEDs, the one or more controller chips, and the top surface of the silicon substrate. An embodiment also includes a bottom passivation layer formed on a bottom surface of the silicon substrate.
Abstract translation: 描述了适合的电子设备和用于形成这种设备的方法。 适应电子器件的实施例可以包括厚度为50μm或更小的硅衬底。 电耦合到控制器芯片的LED阵列可以形成在硅衬底的表面上。 在一个实施例中，顶部钝化层形成在LED阵列上，一个或多个控制器芯片和硅衬底的顶表面上。 实施例还包括形成在硅衬底的底表面上的底部钝化层。
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Patent Agency Ranking
公开(公告)号：US20220293572A1
公开(公告)日：2022-09-15
申请号：US17804707
申请日：2022-05-31
Applicant: Apple Inc.
Inventor： Kapil V. Sakariya , Andreas Bibl , Hsin-Hua Hu
Abstract: Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.
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公开(公告)号：US10950591B2
公开(公告)日：2021-03-16
申请号：US16860677
申请日：2020-04-28
Applicant: Apple Inc.
Inventor： Hsin-Hua Hu
IPC: H01L25/16 , H01L23/00 , H01L33/62 , H01L21/56 , H01L21/683 , H01L25/075
Abstract: Embodiments describe a display integration scheme in which an array of pixel driver chips embedded front side up in an insulator layer. A front side redistribution layer (RDL) spans across and is in electrical connection with the front sides of the array of pixel driver chips, and an array of light emitting diodes (LEDs) is bonded to the front side RDL. The pixel driver chips may be located directly beneath the display area of the display panel.
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公开(公告)号：US10784236B2
公开(公告)日：2020-09-22
申请号：US16028611
申请日：2018-07-06
Applicant: Apple Inc.
Inventor： Kapil V. Sakariya , Andreas Bibl , Hsin-Hua Hu
Abstract: Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.
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公开(公告)号：US20200251614A1
公开(公告)日：2020-08-06
申请号：US16783737
申请日：2020-02-06
Applicant: Apple Inc.
Inventor： Kelly McGroddy , Hsin-Hua Hu , Andreas Bibl , Clayton Ka Tsun Chan , Daniel Arthur Haeger
IPC: H01L33/14 , H01L33/42 , H01L33/30 , H01L33/00 , H01L33/06 , H01L27/01 , H01L23/00 , H01L27/15 , H01L25/075
Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.
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公开(公告)号：US20200091127A1
公开(公告)日：2020-03-19
申请号：US16688646
申请日：2019-11-19
Applicant: Apple Inc.
Inventor： John A. Higginson , Andreas Bibl , Hsin-Hua Hu
IPC: H01L25/16 , H01L33/44 , H01L23/31 , H01L33/06 , H01L33/00 , H01L33/42 , H01L33/62 , H01L25/075 , H01L27/12 , H01L25/00 , H01L33/54
Abstract: A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.
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