公开(公告)号：US09502263B2

公开(公告)日：2016-11-22

申请号：US14933826

申请日：2015-11-05

Applicant: Applied Materials, Inc.

Inventor： Alexandros T. Demos ,  Deenesh Padhi

IPC: H01L21/302 ,  H01L21/311

CPC classification number: H01L21/31116 ,  C23C16/303 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02277 ,  H01L21/0228

Abstract: Implementations described herein generally relate to methods for depositing etch stop layers, such as AlN layers, using UV assisted CVD. Methods disclosed herein generally include positioning a substrate in a process region of a process chamber; delivering an aluminum-containing precursor to the process region, the aluminum-containing precursor depositing an aluminum species onto the substrate; purging the process region of aluminum-containing precursor using an inert gas; delivering a UV responsive nitrogen-containing precursor to the process region, the UV responsive nitrogen-containing gas being activated using UV radiation to create nitrogen radicals, the nitrogen radicals reacting with the aluminum species to form an AlN layer; and purging the process region of UV responsive nitrogen-containing precursor using an inert gas.

Abstract translation: 本文描述的实施方式一般涉及使用UV辅助CVD沉积蚀刻停止层（例如AlN层）的方法。 本文公开的方法通常包括将基底定位在处理室的处理区域中; 向工艺区域输送含铝前体，所述含铝前体将铝物质沉积到所述基底上; 使用惰性气体吹扫含铝前体的工艺区域; 将UV反应性含氮前体输送到工艺区域，UV反应性含氮气体使用UV辐射活化以产生氮自由基，氮自由基与铝物质反应形成AlN层; 并使用惰性气体吹扫UV反应性含氮前体的工艺区域。

公开(公告)号：US20160172238A1

公开(公告)日：2016-06-16

申请号：US14569301

申请日：2014-12-12

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Kumar ,  Deenesh Padhi ,  Alexandros T. Demos ,  Tapash Chakraborty ,  Geetika Bajaj ,  Robert Jan Visser

IPC: H01L21/768

CPC classification number: H01L21/76831

Abstract: A method of forming features in a low-k dielectric layer is described. A via, trench or a dual damascene structure may be present in the low-k dielectric layer prior to depositing a conformal hermetic layer. The conformal hermetic layer is configured to keep water and contaminants out. Some of the same conformal hermetic layer may deposit on the underlying copper. The portion of the conformal hermetic layer on the underlying copper is preferentially removed but the beneficial portion on the low-k dielectric layer remains. The selective removal of the conformal hermetic layer may be accomplished using a dry etch or a wet etch using a weak organic acid.

Abstract translation: 描述了在低k电介质层中形成特征的方法。 在沉积保形密封层之前，可以在低k电介质层中存在通孔，沟槽或双镶嵌结构。 保形密封层被配置成保持水和污染物排出。 一些相同的保形密封层可能沉积在下面的铜上。 优先除去底层铜上的共形密封层的部分，但是在低k电介质层上的有益部分保留。 选择性去除保形密封层可以使用干蚀刻或使用弱有机酸的湿蚀刻来实现。

公开(公告)号：US09058980B1

公开(公告)日：2015-06-16

申请号：US14098428

申请日：2013-12-05

Applicant: Applied Materials, Inc.

Inventor： Bo Xie ,  Kelvin Chan ,  Alexandros T. Demos

IPC: H01L21/02

CPC classification number: H01L21/02118 ,  C23C16/482 ,  H01L21/02277 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6719

Abstract: Embodiments of the invention generally provide methods for sealing pores at a surface of a dielectric layer formed on a substrate. In one embodiment, the method includes exposing a dielectric layer formed on a substrate to a first pore sealing agent, wherein the first pore sealing agent contains a compound with a general formula CxHyOz, where x has a range of between 1 and 15, y has a range of between 2 and 22, and z has a range of between 1 and 3, and exposing the substrate to UV radiation in an atmosphere of the first pore sealing agent to form a first sealing layer on the dielectric layer.

Abstract translation: 本发明的实施方案通常提供了在形成在基底上的电介质层的表面处密封孔的方法。 在一个实施方案中，该方法包括将形成在基底上的电介质层暴露于第一孔密封剂，其中第一孔密封剂含有具有通式C x H y O z的化合物，其中x具有1至15的范围，y具有 在2和22之间的范围，z具有1和3之间的范围，并且在第一孔密封剂的气氛中将基底暴露于UV辐射，以在介电层上形成第一密封层。

公开(公告)号：US08657961B2

公开(公告)日：2014-02-25

申请号：US13856962

申请日：2013-04-04

Applicant: Applied Materials, Inc.

Inventor： Bo Xie ,  Alexandros T. Demos ,  Scott A. Hendrickson ,  Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez

IPC: C25F1/00

CPC classification number: B08B7/0021 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/3244 ,  H01J37/32862

Abstract: Embodiments of the invention generally provide methods for cleaning a UV processing chamber. In one embodiment, the method includes flowing an oxygen-containing gas through a plurality of passages formed in a UV transparent gas distribution showerhead and into a processing region located between the UV transparent gas distribution showerhead and a substrate support disposed within the thermal processing chamber, exposing the oxygen-containing gas to UV radiation under a pressure scheme comprising a low pressure stage and a high pressure stage to generate reactive oxygen radicals, and removing unwanted residues or deposition build-up from exposed surfaces of chamber components presented in the thermal processing chamber using the reactive oxygen radicals.

Abstract translation: 本发明的实施例通常提供用于清洁UV处理室的方法。 在一个实施方案中，该方法包括使含氧气体通过形成在UV透明气体分配喷头中的多个通道流入位于UV透明气体分配喷头和位于热处理室内的基板支架之间的处理区域中， 在包含低压级和高压级的压力方案下将含氧气体暴露于紫外线辐射以产生活性氧自由基，以及从在热处理室中呈现的腔室组分的暴露表面去除不需要的残留物或沉积物 使用活性氧自由基。

公开(公告)号：US09580801B2

公开(公告)日：2017-02-28

申请号：US14535803

申请日：2014-11-07

Applicant: Applied Materials, Inc.

Inventor： Xiaolan Ba ,  Weifeng Ye ,  Mei-yee Shek ,  Yu Jin ,  Li-Qun Xia ,  Deenesh Padhi ,  Alexandros T. Demos

IPC: H01L21/31 ,  C23C16/44 ,  C23C16/36 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56 ,  H01L21/768 ,  H01L21/02

CPC classification number: C23C16/4408 ,  C23C16/36 ,  C23C16/45523 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02167 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

Abstract: Embodiments described herein generally relate to the formation of a UV compatible barrier stack. Methods described herein can include delivering a process gas to a substrate positioned in a process chamber. The process gas can be activated to form an activated process gas, the activated process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen. The activated process gas can then be purged from the process chamber. An activated nitrogen-containing gas can be delivered to the barrier layer, the activated nitrogen-containing gas having a N2:NH3 ratio of greater than about 1:1. The activated nitrogen-containing gas can then be purged from the process chamber. The above elements can be performed one or more times to deposit the barrier stack.

Abstract translation: 本文描述的实施方案通常涉及形成与UV相容的阻挡层叠体。 本文所述的方法可以包括将处理气体输送到位于处理室中的基板。 工艺气体可以被活化以形成活化的工艺气体，活化的工艺气体在衬底的表面上形成阻挡层，阻挡层包括硅，碳和氮。 然后可以从处理室清除活化的工艺气体。 可以将活化的含氮气体输送到阻挡层，活性含氮气体的N 2 :NH 3比率大于约1:1。 然后可以将活化的含氮气体从处理室清除。 上述元件可以执行一次或多次以沉积势垒堆叠。

公开(公告)号：US09324571B2

公开(公告)日：2016-04-26

申请号：US14765673

申请日：2014-02-04

Applicant: Applied Materials, Inc.

Inventor： Kang Sub Yim ,  Pendar Ardalan ,  Sure Ngo ,  Alexandros T. Demos

IPC: H01L21/00 ,  H01L21/3105 ,  H01L21/02

CPC classification number: H01L21/31058 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02359 ,  H01L21/3105

Abstract: A method and apparatus for depositing a low K dielectric film with one or more features is disclosed herein. A method of forming a dielectric layer can include positioning a substrate in a processing chamber, delivering a deposition gas to the processing chamber, depositing a dense organosilicon layer using the deposition gas on the surface of the substrate, the dense organosilicon layer comprising a porogenic carbon, transferring a pattern into the dense organosilicon layer, forming a pore-forming plasma from a reactant gas, exposing the dense organosilicon layer to the pore-forming plasma to create a porous organosilicon layer, wherein the pore-forming plasma removes at least a portion of the porogenic carbon and exposing the porous organosilicon layer to a desiccating post treatment.

Abstract translation: 本文公开了一种用于沉积具有一个或多个特征的低K电介质膜的方法和装置。 形成电介质层的方法可以包括将衬底定位在处理室中，将沉积气体输送到处理室中，使用沉积气体在衬底的表面上沉积致密的有机硅层，致密有机硅层包含致孔碳 将图案转移到致密的有机硅层中，从反应气体形成成孔等离子体，将致密的有机硅层暴露于成孔等离子体以产生多孔有机硅层，其中成孔等离子体去除至少一部分 的造孔碳，并将多孔有机硅层暴露于干燥后处理。

公开(公告)号：US09165998B2

公开(公告)日：2015-10-20

申请号：US14213038

申请日：2014-03-14

Applicant: Applied Materials, Inc.

Inventor： Kang Sub Yim ,  Pendar Ardalan ,  Sure Ngo ,  Alexandros T. Demos

IPC: H01L21/31 ,  H01L29/06 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/505 ,  H01L21/768

CPC classification number: H01L29/06 ,  C23C16/401 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/505 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/7682 ,  H01L21/76829 ,  H01L2221/1047

Abstract: Embodiments of the present invention provide a film stack and method for depositing an adhesive layer for a low dielectric constant bulk layer without the need for an initiation layer. A film stack for use in a semiconductor device comprises of a dual layer low-K dielectric deposited directly on an underlying layer. The dual low-K dielectric consists of an adhesive layer deposited without a carbon free initiation layer.

Abstract translation: 本发明的实施例提供了一种薄膜堆叠和用于沉积低介电常数体积层的粘合剂层的方法，而不需要起始层。 用于半导体器件的薄膜叠层包括直接沉积在下层上的双层低K电介质。 双低K电介质由不含无碳的起始层沉积的粘合剂层组成。

公开(公告)号：US10113234B2

公开(公告)日：2018-10-30

申请号：US14801348

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Bo Xie ,  Alexandros T. Demos ,  Vu Ngoc Tran Nguyen ,  Kelvin Chan ,  He Ren ,  Kang Sub Yim ,  Mehul B. Naik

IPC: C23C16/48 ,  C23C16/40 ,  H01L21/768 ,  H01L21/3105

Abstract: Embodiments described herein provide a method for sealing a porous low-k dielectric film. The method includes forming a sealing layer on the porous low-k dielectric film using a cyclic process. The cyclic process includes repeating a sequence of depositing a sealing layer on the porous low-k dielectric film and treating the sealing layer until the sealing layer achieves a predetermined thickness. The treating of each intermediate sealing layer generates more reactive sites on the surface of each intermediate sealing layer, which improves the quality of the resulting sealing layer.

公开(公告)号：US09793108B2

公开(公告)日：2017-10-17

申请号：US14750778

申请日：2015-06-25

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Mehul B. Naik ,  Deenesh Padhi ,  Priyanka Dash ,  Bhaskar Kumar ,  Alexandros T. Demos

IPC: H01L21/02 ,  H01L21/31 ,  C23C16/36 ,  H01L21/3105 ,  C23C16/04 ,  C23C16/48 ,  C23C16/56

CPC classification number: H01L21/02126 ,  C23C16/045 ,  C23C16/36 ,  C23C16/482 ,  C23C16/56 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method for sealing porous low-k dielectric films is provided. The method comprises exposing a substrate to UV radiation and a first reactive gas, wherein the substrate has an open feature defined therein, the open feature defined by a porous low-k dielectric layer and a conductive material, wherein the porous low-k dielectric layer is a silicon and carbon containing material and selectively forming a pore sealing layer in the open feature on exposed surfaces of the porous low-k dielectric layer using UV assisted photochemical vapor deposition.

公开(公告)号：US09646876B2

公开(公告)日：2017-05-09

申请号：US14634512

申请日：2015-02-27

Applicant: Applied Materials, Inc.

Inventor： Deenesh Padhi ,  Srinivas Guggilla ,  Alexandros T. Demos ,  Bhaskar Kumar ,  He Ren ,  Priyanka Dash

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/02 ,  H01L23/532

CPC classification number: H01L21/76813 ,  H01L21/02458 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76862 ,  H01L23/53295

Abstract: A method of forming features in a dielectric layer is described. A via, trench or a dual-damascene structure may be present in the dielectric layer prior to depositing a conformal aluminum nitride layer. The conformal aluminum nitride layer is configured to serve as a barrier to prevent diffusion across the barrier. The methods of forming the aluminum nitride layer involve the alternating exposure to two precursor treatments (like ALD) to achieve high conformality. The high conformality of the aluminum nitride barrier layer enables the thickness to be reduced and the effective conductivity of the subsequent gapfill metal layer to be increased.