公开(公告)号：US11735420B2

公开(公告)日：2023-08-22

申请号：US17014975

申请日：2020-09-08

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Yuanhong Guo ,  Liqi Wu ,  Michael S. Jackson ,  Ludovic Godet ,  Tobin Kaufman-Osborn ,  Erica Chen ,  Paul F. Ma

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/683 ,  H01L21/32

CPC classification number: H01L21/0271 ,  H01L21/0206 ,  H01L21/0228 ,  H01L21/02057 ,  H01L21/02181 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/02334 ,  H01L21/3105 ,  H01L21/67207 ,  H01L21/32 ,  H01L21/6831

Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

公开(公告)号：US20210217615A1

公开(公告)日：2021-07-15

申请号：US17197866

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Michael S. Jackson ,  Liqi Wu ,  Lei Zhou ,  Shuyi Zhang ,  David Thompson ,  Paul F. Ma ,  Biao Liu ,  Cheng Pan

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/56 ,  H01L21/3105

Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

公开(公告)号：US10950433B2

公开(公告)日：2021-03-16

申请号：US16193594

申请日：2018-11-16

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Michael S. Jackson ,  Liqi Wu ,  Lei Zhou ,  Shuyi Zhang ,  David Thompson ,  Paul F. Ma ,  Biao Liu ,  Cheng Pan

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/32

Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.