公开(公告)号：US10770292B2

公开(公告)日：2020-09-08

申请号：US16008495

申请日：2018-06-14

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Yuanhong Guo ,  Liqi Wu ,  Michael S. Jackson ,  Ludovic Godet ,  Tobin Kaufman-Osborn ,  Erica Chen ,  Paul F. Ma

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/683 ,  H01L21/32

Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

公开(公告)号：US20190210061A1

公开(公告)日：2019-07-11

申请号：US16242184

申请日：2019-01-08

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Song-Moon Suh ,  Liqi Wu ,  Michael S. Jackson ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Paul F. Ma ,  Mei Chang

IPC: B05D3/04 ,  B05D1/00 ,  C23C16/455 ,  C23C16/04

CPC classification number: B05D3/044 ,  B05D1/60 ,  B05D3/0453 ,  C23C16/042 ,  C23C16/45544 ,  C23C16/45563

Abstract: Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

公开(公告)号：US20190157079A1

公开(公告)日：2019-05-23

申请号：US16193594

申请日：2018-11-16

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Michael S. Jackson ,  Liqi Wu ,  Lei Zhou ,  Shuyi Zhang ,  David Thompson ,  Paul F. Ma ,  Biao Liu ,  Cheng Pan

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/56

Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

公开(公告)号：US09391024B2

公开(公告)日：2016-07-12

申请号：US14850069

申请日：2015-09-10

Applicant: Applied Materials, Inc.

Inventor： Bo Xie ,  Kang Sub Yim ,  Cheng Pan ,  Sure Ngo ,  Taewan Kim ,  Alexandros T. Demos

IPC: H01L23/58 ,  H01L21/31 ,  H01L23/532 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L23/53295 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.

Abstract translation: 本公开的实施例通常提供耐等离子体损伤的多层电介质堆叠配置。 公开了用于在本体低介电常数层上沉积薄保护性低介电常数层以产生层堆叠的方法。 结果，等离子体处理期间和之后多层堆叠的介电常数不变。

公开(公告)号：US11515155B2

公开(公告)日：2022-11-29

申请号：US17197866

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Michael S. Jackson ,  Liqi Wu ,  Lei Zhou ,  Shuyi Zhang ,  David Thompson ,  Paul F. Ma ,  Biao Liu ,  Cheng Pan

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/32

Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

公开(公告)号：US10892161B2

公开(公告)日：2021-01-12

申请号：US16169610

申请日：2018-10-24

Applicant: Applied Materials, Inc.

Inventor： Biao Liu ,  Cheng Pan ,  Erica Chen ,  Srinivas D. Nemani ,  Chang Ke ,  Lei Zhou

IPC: H01L21/02 ,  H01L23/31 ,  H01L21/768 ,  H01L23/29 ,  H01L21/3105 ,  H01L21/321 ,  C23C16/00 ,  B05D1/18 ,  H01L21/32

Abstract: Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.

公开(公告)号：US20210283650A1

公开(公告)日：2021-09-16

申请号：US17335829

申请日：2021-06-01

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Song-Moon Suh ,  Liqi Wu ,  Michael S. Jackson ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Paul F. Ma ,  Mei Chang

IPC: B05D3/04 ,  B05D1/00 ,  C23C16/04 ,  C23C16/455 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/321

Abstract: Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

公开(公告)号：US11033930B2

公开(公告)日：2021-06-15

申请号：US16242184

申请日：2019-01-08

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Song-Moon Suh ,  Liqi Wu ,  Michael S. Jackson ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Paul F. Ma ,  Mei Chang

IPC: B05D3/04 ,  B05D1/00 ,  C23C16/455 ,  C23C16/04 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/321 ,  B05D1/18

Abstract: Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

公开(公告)号：US10964527B2

公开(公告)日：2021-03-30

申请号：US16401883

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Jong Mun Kim ,  Biao Liu ,  Cheng Pan ,  Erica Chen ,  Chentsau Ying ,  Srinivas Nemani ,  Ellie Yieh

IPC: H01L21/02 ,  H01L21/3105 ,  H01L21/311

Abstract: Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.

公开(公告)号：US20180366317A1

公开(公告)日：2018-12-20

申请号：US16008495

申请日：2018-06-14

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Yuanhong Guo ,  Liqi Wu ,  Michael S. Jackson ,  Ludovic Godet ,  Tobin Kaufman-Osborn ,  Erica Chen ,  Paul F. Ma

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/67

Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.