Bake devices for handling and uniform baking of substrates

    公开(公告)号:US12225641B2

    公开(公告)日:2025-02-11

    申请号:US17119377

    申请日:2020-12-11

    Abstract: Embodiments of the present disclosure relate to bake apparatuses for handling and uniform baking of substrates and methods for the handling and the uniform baking of substrates. The bake apparatuses allow the substrates to be heated to a temperature greater than 50° C. without bowing of about 1 mm to about 2 mm from the edge of the substrates to the center of the substrates. The bake apparatuses heat the substrates uniformly or substantially uniformly to improve substrate quality.

    Maskless lithography method to fabricate topographic substrate

    公开(公告)号:US11669012B2

    公开(公告)日:2023-06-06

    申请号:US16798261

    申请日:2020-02-21

    CPC classification number: G03F7/0005 G03F7/0043 G03F7/038 G03F7/2022

    Abstract: In one embodiment, a method of fabricating a device having at least two features of differing heights comprises: depositing a resist over a substrate; determining a topography pattern for the at least two features of the device; determining an exposure pattern for the at least two features of the device; exposing a first area of the resist with a first dose of light, the first area corresponding to a first feature of the at least two features; exposing a second area of the resist with a second dose of light that is different from the first dose of light, the second area corresponding to a second feature of the at least two features; and developing the resist.

    Mask orientation
    13.
    发明授权

    公开(公告)号:US11226440B2

    公开(公告)日:2022-01-18

    申请号:US16735603

    申请日:2020-01-06

    Abstract: A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.

    Measurement system and grating pattern array

    公开(公告)号:US10921721B1

    公开(公告)日:2021-02-16

    申请号:US16596237

    申请日:2019-10-08

    Abstract: Embodiments of the present disclosure include measurement systems and grating pattern arrays. The measurement systems include multiple subsystems for creating diffraction patterns or magnified real images of grating regions on a substrate. The measurements systems are configured to reflect and transmit light, and the reflected and transmitted beams create diffraction patterns and enlarged images. The diffraction patterns and images provide information on grating pitch and angles of grating regions. Grating pattern arrays disposed on a substrate include main regions and reference regions. The reference regions are used to locate corresponding main regions. The measurement systems do not include a rotating stage, and thus precise control of rotation of a stage is not needed.

    Method to determine line angle and rotation of multiple patterning

    公开(公告)号:US12085475B2

    公开(公告)日:2024-09-10

    申请号:US17771557

    申请日:2020-12-14

    CPC classification number: G01M11/30

    Abstract: A method and apparatus for determining a line angle and a line angle rotation of a grating or line feature is disclosed. An aspect of the present disclosure involves, measuring coordinate points of a first line feature using a measurement tool, determining a first slope of the first line feature from the coordinate points, and determining a first line angle from the slope of the first line feature. This process can be repeated to find a second slope of a second line feature that is adjacent to the first line feature. The slope of the first and second line features can be compared to find a line angle rotation. The line angle rotation is compared to a design specification and a stitch quality is determined.

    Mask orientation
    18.
    发明授权

    公开(公告)号:US11977246B2

    公开(公告)日:2024-05-07

    申请号:US18120520

    申请日:2023-03-13

    CPC classification number: G02B5/1857 G03F1/42 G03F7/201 G03F7/70775 G03F7/2002

    Abstract: A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.

    Imaging system and method of creating composite images

    公开(公告)号:US11610925B2

    公开(公告)日:2023-03-21

    申请号:US16859708

    申请日:2020-04-27

    Abstract: An imaging system and a method of creating composite images are provided. The imaging system includes one or more lens assemblies coupled to a sensor. When reflected light from an object enters the imaging system, incident light on the metalens filter systems creates filtered light, which is turned into composite images by the corresponding sensors. Each metalens filter system focuses the light into a specific wavelength, creating the metalens images. The metalens images are sent to the processor, wherein the processor combines the metalens images into one or more composite images. The metalens images are combined into a composite image, and the composite image has reduced chromatic aberrations.

Patent Agency Ranking