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公开(公告)号:US20240145213A1
公开(公告)日:2024-05-02
申请号:US17977537
申请日:2022-10-31
Applicant: Axcelis Technologies, Inc.
Inventor: Neil Colvin , Paul Silverstein , Joshua Abeshaus
IPC: H01J37/317 , H01J37/063
CPC classification number: H01J37/3171 , H01J37/063
Abstract: An electrode apparatus for an ion implantation system has a base plate having a base plate aperture and at least one securement region. A securement apparatus is associated with each securement region, and a plurality of electrode rods are selectively coupled to the base plate by the securement apparatus. The plurality of electrode rods have a predetermined shape to define an optical region that is associated with the base plate aperture. An electrical coupling electrically connects to the plurality of electrode rods and is configured to electrically connect to an electrical potential. The plurality of electrode rods have a predetermined shape configured to define a path of a charged particle passing between the plurality of electrode rods based on the electrical potential. The plurality of electrode rods can define a suppressor or ground electrode downstream of an extraction aperture of an ion source.
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公开(公告)号:US10676370B2
公开(公告)日:2020-06-09
申请号:US15995707
申请日:2018-06-01
Applicant: Axcelis Technologies, Inc.
Inventor: Neil Colvin , Tseh-Jen Hsieh , Neil Basson
IPC: C01F7/48 , C23C16/12 , H01J37/317 , C01B7/13 , C23C14/48 , C23C16/448 , H01L21/02 , H01L21/265 , H01J37/08 , H01L21/306
Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. An arc chamber forms a plasma from the aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A hydrogen co-gas source further introduces a hydrogen co-gas to react residual aluminum iodide and iodide, where the reacted residual aluminum iodide and iodide is evacuated from the system.
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公开(公告)号:US10074508B2
公开(公告)日:2018-09-11
申请号:US15350832
申请日:2016-11-14
Applicant: Axcelis Technologies, Inc.
Inventor: John F. Baggett , Neil Colvin
IPC: H01J37/08 , H01J37/317
CPC classification number: H01J37/08 , H01J37/3171 , H01J2237/0206 , H01J2237/022 , H01J2237/038
Abstract: An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. One or more of the features is an undercut extending generally axially or at a non-zero angle from an axis of the elongate body into the elongate body. One of the features can be a rib extending from a radius of the elongate body.
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公开(公告)号:US20150357151A1
公开(公告)日:2015-12-10
申请号:US14300692
申请日:2014-06-10
Applicant: Axcelis Technologies, Inc.
Inventor: Neil Colvin , Tseh-Jen Hsieh
IPC: H01J37/08 , H01J37/317 , H01J37/16
CPC classification number: H01J37/08 , H01J27/205 , H01J37/3171 , H01J2237/0213 , H01J2237/061
Abstract: An ion implementation system includes an ion source chamber having a textured surfaced to reduce surface film delamination on the interior walls of the ion source chamber. The residual stresses originated from the thermal expansion mismatch due to temperature changes and the tensile residual stress between film and the substrate (liners). The textured feature alters the width to thickness ratio so that it will peel off when it reaches its fracture tensile stress. The machine textures surface increases the mechanical interlocking of the film that builds up on the surface of the ion source chamber, which delays delamination and reduces the size of the resulting flake thereby reducing the likelihood that the flake will bridge a biased component to a ground reference surface and correspondingly increases the life of the ion source.
Abstract translation: 离子实施系统包括具有纹理表面的离子源室,以减少离子源室的内壁上的表面膜分层。 由于温度变化引起的热膨胀失配和膜与衬底(衬垫)之间的拉伸残余应力产生的残余应力。 纹理特征改变宽度与厚度比,使其在达到其断裂拉伸应力时将剥离。 机器纹理表面增加了在离子源室的表面上形成的膜的机械互锁,这延迟了分层并且减小了所得薄片的尺寸,从而降低了薄片将偏置组件桥接到地面参考的可能性 表面并相应地增加离子源的寿命。
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公开(公告)号:US20230343558A1
公开(公告)日:2023-10-26
申请号:US18336337
申请日:2023-06-16
Applicant: Axcelis Technologies, Inc.
Inventor: Neil J. Bassom , Joshua Abeshaus , David Sporleder , Neil Colvin , Joseph Valinski , Michael Cristoforo , Vladimir Romanov , Pradeepa Kowrikan Subrahmnya
CPC classification number: H01J37/32412 , H01J37/08
Abstract: An ion source has an arc chamber defining an arc chamber volume. A reservoir is coupled to the arc chamber, defining a reservoir volume. The reservoir receives a source species to define a liquid within the reservoir volume. A conduit fluidly couples the reservoir volume to the arc chamber volume. First and second openings of the conduit are open to the respective reservoir and arc chamber volume. A heat source selectively heats the reservoir to melt the source species at a predetermined temperature. A liquid control apparatus controls a first volume of the liquid within the reservoir volume to define a predetermined supply of the liquid to the arc chamber volume. The liquid control apparatus is a pressurized gas source fluidly coupled to the reservoir to supply a gas to the reservoir and provide a predetermined amount of liquid to the arc chamber.
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公开(公告)号:US11521821B2
公开(公告)日:2022-12-06
申请号:US17223360
申请日:2021-04-06
Applicant: Axcelis Technologies, Inc.
Inventor: Steven T. Drummond , Neil Colvin , Paul Silverstein
IPC: H01J37/08 , H01L21/225 , H01J37/317 , H01J27/14
Abstract: An ion source has an arc chamber having one or more arc chamber walls defining and interior region of the arc chamber. A cathode electrode is disposed along an axis. A repeller has a repeller shaft and a ceramic target member separated by a gap. The repeller shaft is not in electrical or mechanical contact with the target member, and the repeller shaft is configured to indirectly heat the target member. The target member, can be a cylinder encircling the repeller shaft, where the gap separates the cylinder from the repeller shaft. A top cap can enclose the cylinder can be separated from a top repeller surface of the repeller shaft by the gap. A target hole can be in the top cap. The target member can be supported by a bottom liner of the arc chamber or a support member mechanically and electrically coupled to the repeller shaft.
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公开(公告)号:US11170967B2
公开(公告)日:2021-11-09
申请号:US16824069
申请日:2020-03-19
Applicant: Axcelis Technologies, Inc.
Inventor: Neil Bassom , Neil Colvin , Tseh-Jen Hsieh , Michael Ameen
Abstract: An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing power supply electrically biases the reservoir apparatus with respect to the arc chamber to vaporize the liquid metal to form a plasma in the arc chamber environment. The reservoir apparatus has a cup and cap defining a reservoir environment for the liquid metal that is fluidly coupled to the arc chamber environment by holes in the cap. Features extend from the cup into the reservoir and contact the liquid metal to feed the liquid metal toward the arc chamber environment by capillary action. A structure, surface area, roughness, and material modifies the capillary action. The feature can be an annular ring, rod, or tube extending into the liquid metal.
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公开(公告)号:US20200303154A1
公开(公告)日:2020-09-24
申请号:US16824069
申请日:2020-03-19
Applicant: Axcelis Technologies, Inc.
Inventor: Neil Bassom , Neil Colvin , Tseh-Jen Hsieh , Michael Ameen
Abstract: An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing power supply electrically biases the reservoir apparatus with respect to the arc chamber to vaporize the liquid metal to form a plasma in the arc chamber environment. The reservoir apparatus has a cup and cap defining a reservoir environment for the liquid metal that is fluidly coupled to the arc chamber environment by holes in the cap. Features extend from the cup into the reservoir and contact the liquid metal to feed the liquid metal toward the arc chamber environment by capillary action. A structure, surface area, roughness, and material modifies the capillary action. The feature can be an annular ring, rod, or tube extending into the liquid metal.
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公开(公告)号:US10361081B2
公开(公告)日:2019-07-23
申请号:US15807652
申请日:2017-11-09
Applicant: Axcelis Technologies, Inc.
Inventor: Neil Colvin , Tseh-Jen Hsieh
IPC: H01L21/265 , H01J37/317
Abstract: Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.
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公开(公告)号:US20180144904A1
公开(公告)日:2018-05-24
申请号:US15807664
申请日:2017-11-09
Applicant: Axcelis Technologies, Inc.
Inventor: Neil Colvin , Tseh-Jen Hsieh
IPC: H01J37/08 , C01B25/10 , C01B32/50 , C01B32/40 , C01B25/12 , C01F17/00 , C01G41/00 , C01B7/20 , C23C14/48
CPC classification number: H01J37/08 , C01B7/20 , C01B25/10 , C01B25/12 , C01B32/40 , C01B32/50 , C01F17/00 , C01G41/00 , C23C14/48 , H01J37/3171
Abstract: Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (PF3) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advantageously results in minimal oxidation of the cathode and cathode shield. Moreover, acceptable levels of carbon deposits on the arc chamber internal components have been observed as well as marked reductions in the halogen cycle, i.e., WFx formation.
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