15.
    发明专利
    未知

    公开(公告)号:DE10031587A1

    公开(公告)日:2002-01-10

    申请号:DE10031587

    申请日:2000-06-29

    Applicant: BASF AG

    Abstract: The process comprises dosing at least two different material components as suspensions from one or more dosing devices allowing the delivery of individual suspension drops on the same point of a substrate so that materials with different compositions are obtained on different surface regions of the substrate. An Independent claim is also included for a device for carrying out the process comprising a computer-controlled movable robot arm carrying one or more dosing devices, and a computer for controlling the arm. Preferred Features: The flat substrate is arranged horizontally and coated vertically from above with the dosing devices arranged perpendicular or at an angle to the flat substrate. The suspension is dosed by sliding a moving piston in the dosing device. The material components are initially dosed onto an auxiliary substrate and mixed. This mixture is then placed in the dosing device and dosed onto the substrate.

    THERMOELECTRIC NANOMATERIALS
    16.
    发明专利

    公开(公告)号:CA2634865A1

    公开(公告)日:2007-07-12

    申请号:CA2634865

    申请日:2006-11-30

    Applicant: BASF AG

    Abstract: The method involves providing a melted mass or solution, which contains a carrier material or suitable precursor compounds of the carrier material and thermo electric active materials or precursor compounds of the thermo electric active materials. The melted mass or solution is electrically spun, and a fiber containing the precursor compounds of the thermo electric active materials is received. The fiber is enclosed with an electrical insulator, and the precursor compounds of the thermo electric active materials are converted into an active form.

    Thermoelectrically active p- or n- conductive semi-conductor material, useful in thermoelectrical generator and Peltier arrangement, comprises lead-tellurium-tin-antimony compound

    公开(公告)号:DE102007014499A1

    公开(公告)日:2007-10-04

    申请号:DE102007014499

    申请日:2007-03-27

    Abstract: Thermoelectrically active p- or n- conductive semi-conductor material (A) comprises lead-tellurium-tin-antimony compound (I), where: 0-10 wt.% of (I) is substituted by another metal or metallic components, (A) exhibits Seebeck coefficient of at least 60 mu V/K at 25[deg]C, an electrical conductivity of at least 150 S/cm and a power factor of at least 5 mu W/(cm.K 2>). Thermoelectrically active p- or n- conductive semi-conductor material (A) comprises lead-tellurium-tin-antimony compound (I) of formula ((PbTe) 1-x(Sn aSb bTe 5) x), where 0-10 wt.% of (I) is substituted by another metal or metallic components, (A) exhibits Seebeck coefficient of at least 60 mu V/K at 25[deg]C, electrical conductivity of at least 150 S/cm and a power factor of at least 5 mu W/(cm.K 2>). a = (2 +- y); b = (2 +- z); x = 0.0001-0.5, preferably 0.0001-0.05; and y, z = 0-2. Independent claims are included for: (1) a method for the preparation of the semi-conductor comprising melting the mixture of element powder or its alloy for at least one hour, fast cooling the semi-conductor at 100K and annealing the semi-conductor for at least one hour; (2) the semiconductor material, obtained by the above process; and (3) thermoelectrical generator or Peltier arrangement, comprising (A).

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