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公开(公告)号:DE102005047605A1
公开(公告)日:2007-04-05
申请号:DE102005047605
申请日:2005-10-04
Applicant: BASF AG
Inventor: STERZEL HANS-JOSEF , KUEHLING KLAUS
Abstract: Photonic crystal comprises units with a refractive index of more than 3 and units with a refractive index of less than 1.6 in a periodic succession. The units are spaced at intervals of 1-20 mu m. Preferred Features: The particles with high refractive index are made from silicon, germanium, zinc selenide, zinc oxide, metal powder or metal sulfide powder.
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公开(公告)号:DE102004025066A1
公开(公告)日:2005-12-08
申请号:DE102004025066
申请日:2004-05-18
Applicant: BASF AG
Inventor: STERZEL HANS-JOSEF , KUEHLING KLAUS
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公开(公告)号:CA2488176A1
公开(公告)日:2005-06-10
申请号:CA2488176
申请日:2004-11-23
Applicant: BASF AG
Inventor: WATZENBERGER OTTO , UNGER GABRIELE , SCHOENFELDER HENDRIK , STERZEL HANS-JOSEF , KUEHLING KLAUS
Abstract: Iron pentacarbonyl is prepared by reacting iron with carbon monoxide in suspension and in the presence of a mixture of alkali metal sulfide and sulfur as a catalyst.
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公开(公告)号:DE10221498A1
公开(公告)日:2003-12-04
申请号:DE10221498
申请日:2002-05-14
Applicant: BASF AG
Inventor: STERZEL HANS-JOSEF , KUEHLING KLAUS
Abstract: Capacitors having an inert porous shaped body onto which a first electrically conductive layer, a second layer of barium titanate and a further electrically conductive layer have been applied.
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公开(公告)号:DE10031587A1
公开(公告)日:2002-01-10
申请号:DE10031587
申请日:2000-06-29
Applicant: BASF AG
Inventor: STERZEL HANS-JOSEF , KUEHLING KLAUS
Abstract: The process comprises dosing at least two different material components as suspensions from one or more dosing devices allowing the delivery of individual suspension drops on the same point of a substrate so that materials with different compositions are obtained on different surface regions of the substrate. An Independent claim is also included for a device for carrying out the process comprising a computer-controlled movable robot arm carrying one or more dosing devices, and a computer for controlling the arm. Preferred Features: The flat substrate is arranged horizontally and coated vertically from above with the dosing devices arranged perpendicular or at an angle to the flat substrate. The suspension is dosed by sliding a moving piston in the dosing device. The material components are initially dosed onto an auxiliary substrate and mixed. This mixture is then placed in the dosing device and dosed onto the substrate.
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公开(公告)号:CA2634865A1
公开(公告)日:2007-07-12
申请号:CA2634865
申请日:2006-11-30
Applicant: BASF AG
Inventor: GREINER ANDREAS , WENDORFF JOACHIM H , GRAESER MARTIN , KUEHLING KLAUS
Abstract: The method involves providing a melted mass or solution, which contains a carrier material or suitable precursor compounds of the carrier material and thermo electric active materials or precursor compounds of the thermo electric active materials. The melted mass or solution is electrically spun, and a fiber containing the precursor compounds of the thermo electric active materials is received. The fiber is enclosed with an electrical insulator, and the precursor compounds of the thermo electric active materials are converted into an active form.
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公开(公告)号:DE102004043786A1
公开(公告)日:2006-03-09
申请号:DE102004043786
申请日:2004-09-08
Applicant: BASF AG
Inventor: KUEHLING KLAUS , STERZEL HANS-JOSEF
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公开(公告)号:DE10358074A1
公开(公告)日:2005-07-21
申请号:DE10358074
申请日:2003-12-10
Applicant: BASF AG
Inventor: UNGER GABRIELE , SCHOENFELDER HENDRIK , WATZENBERGER OTTO , STERZEL HANS-JOSEF , KUEHLING KLAUS
Abstract: Production of iron penta carbonyl by reaction of iron with carbon monoxide in a suspension is catalyzed by a mixture of an alkali sulfide and sulfur.
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公开(公告)号:DE10223744A1
公开(公告)日:2003-12-11
申请号:DE10223744
申请日:2002-05-28
Applicant: BASF AG
Inventor: STERZEL HANS-JOSEF , KUEHLING KLAUS
IPC: H01L31/032 , H01L31/0264 , H01L31/0392 , H01L31/042 , H01L31/18
Abstract: A photovoltaic cell comprises a photovoltaically active p- or n-doped semiconductor material made from a ternary compound (I) or a mixed oxide (II). A photovoltaic cell comprises a photovoltaically active p- or n-doped semiconductor material made from a ternary compound of formula (I) or a mixed oxide of formula (II): MexSAySBz (I) Me = Al, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Cu or Ag; SA, SB = different groups of the periodic table; and x, y, z = 0.01-1. ((CaOu.(SrO)v.(BaO)w.(1/2Bi2O3)x)f.(2n+a/2).((k)MenOn/2.(2-k).Men+aOn+a/2) (II) Me = Fe, Cu, V, Mn, Sn, Ti, Mo, W; n = 1-6; a = 1 or 2; f = 0.2-5; k = 0.01-2; and u+v+w+x = 1. Independent claims are also included for: (1) a process for the production of semiconductor materials; (2) a process for the combinatory production and testing of the semiconductor materials; (3) an array of semiconductor materials; and (4) a process for the production of photovoltaic cells.
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公开(公告)号:DE102007014499A1
公开(公告)日:2007-10-04
申请号:DE102007014499
申请日:2007-03-27
Applicant: BASF AG , UNIV MICHIGAN STATE
Inventor: STERZEL HANS-JOSEF , KUEHLING KLAUS , KANATZIDIS MERCOURI G , CHUNG DUCK-YOUNG
Abstract: Thermoelectrically active p- or n- conductive semi-conductor material (A) comprises lead-tellurium-tin-antimony compound (I), where: 0-10 wt.% of (I) is substituted by another metal or metallic components, (A) exhibits Seebeck coefficient of at least 60 mu V/K at 25[deg]C, an electrical conductivity of at least 150 S/cm and a power factor of at least 5 mu W/(cm.K 2>). Thermoelectrically active p- or n- conductive semi-conductor material (A) comprises lead-tellurium-tin-antimony compound (I) of formula ((PbTe) 1-x(Sn aSb bTe 5) x), where 0-10 wt.% of (I) is substituted by another metal or metallic components, (A) exhibits Seebeck coefficient of at least 60 mu V/K at 25[deg]C, electrical conductivity of at least 150 S/cm and a power factor of at least 5 mu W/(cm.K 2>). a = (2 +- y); b = (2 +- z); x = 0.0001-0.5, preferably 0.0001-0.05; and y, z = 0-2. Independent claims are included for: (1) a method for the preparation of the semi-conductor comprising melting the mixture of element powder or its alloy for at least one hour, fast cooling the semi-conductor at 100K and annealing the semi-conductor for at least one hour; (2) the semiconductor material, obtained by the above process; and (3) thermoelectrical generator or Peltier arrangement, comprising (A).
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