Abstract:
The invention relates to a p- or n-conductive semi-conductor material composed of a ternary compound of general formula (I) Pb x Ge y Te z (I), wherein the indices x, y and z correspond to one of the following relationships: (a) x = 1 - y; z = 1; 0,05
Abstract translation:公开的是从通式(I)的三元化合物一个p型或n型半导体材料的Pb X SUB>锗ý SUB>碲ž SUB>(I) 其中索引x,y和z对应于以下关系之一:(a)x = 1-y; z = 1; 0.05
Abstract:
The invention relates to thermoelectric generators or Peltier arrays which comprise a telluride as the thermoelectrically active semiconducting element. The inventive generators or Peltier arrays are characterized in that the positively polarized atoms of the crystal lattice of the telluride are partially replaced by silicon and/or germanium.
Abstract:
The invention relates to photonic crystals, which comprise units have a refractive index of more that 3 and units having a refractive index of less than 1.6 in a periodic sequence and distances of the individual units from 1 - 20 µm. The invention also relates to the use of said photonic crystals.
Abstract:
A thermoelectric generator or a Peltier arrangement with a mixed oxide as thermoelectric material is disclosed, whereby the mixed oxide comprises the elements titanium, oxygen, sulphur and Me, where Me = calcium, strontium or barium.
Abstract:
The invention relates to ternary semiconducting alloys and thermoelectric generators and Peltier arrays comprising the same and to methods for producing the ternary semiconducting alloys. The ternary semiconducting alloys have band gaps smaller 0.8 eV. The ternary semiconducting alloy is derived from two binary parent compounds and one element of the ternary semiconducting alloy is contained in both binary parent compounds.
Abstract:
The invention relates to contacting, in a temperature stable manner, semi-conductor alloys for use in thermoelectric generators and Peltier arrangements, by means of ultrasonic welding. The invention also relates to a method for the production of thermoelectric modules, preferably using a barrier layer made of borides, nitrides, carbides, phosphides and/or silicides.
Abstract:
A thermoelectrically active p- or n-conductive semiconductor material is constituted by a ternary compound of the general formula (Pb1-xGex)Te with x value from 0.16 to 0.5, wherein 0 to 10% by weight of the ternary compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least ±200 µV/K at a temperature of 25 °C.
Abstract:
Production of iron pentacarbonyl by reaction of iron with carbon monoxide in a suspension is catalyzed by a polysulfide. Production of iron pentacarbonyl by reaction of iron with carbon monoxide in a suspension is catalyzed by a polysulfide of formula (I) RSxR> (I) R and R> are organic residues; and x = 2-10.
Abstract:
Iron pentacarbonyl is prepared by reacting iron with carbon monoxide in suspension and in the presence of a polysulfide of the general formula RS x R' as a catalyst, where R is an organic radical and x is a number from 2 to 8.
Abstract:
Thermoelectric generator or peltier arrangement comprises a thermoelectric semiconductor material made from a p-doped or n-doped semiconductor material of a ternary compound of formula (I), except ternary compounds of formula AlB12 and SiB6, or a mixed oxide of formula (II). MexSAySBz (I) Me = Al, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Cu or Ag; SA and SB = B, C, Si, Ge, Sb, Se or Te; and x, y and z = 0.01-1. ((CaO)u.(SrO)v.(BaO)w.(1/2Bi2O3)x)f.(2n+a/2).((k).MenOn/2.(2-k).Men+aO n+a/2) (II) Me = Fe, Cu, V, Mn, Sn, Ti, Mo or W; n = 1-6; a = 1 or 2; f = 0.2-5; k = 0.01-2; and u + v + w + x = 1. Independent claims are also included for: (1) a process for the production of the semiconductor materials comprising sintering or melting together, and sintering mixtures of the elemental powder or sintering mixtures of the oxide powder; and (2) a process for the combinatory production and testing of the semiconductor materials for thermoelectric generators.