METHOD FOR FORMING DISCHARGE NOZZLE FOR INK JET PRINTER

    公开(公告)号:JP2000218798A

    公开(公告)日:2000-08-08

    申请号:JP2337399

    申请日:1999-02-01

    Abstract: PROBLEM TO BE SOLVED: To uniformly batch perforate many discharge nozzles of good quality in a short time at a thick orifice plate. SOLUTION: A wafer 29 of an ink jet head board is placed on a jig 36 of a treating chamber 35 of a helicon wave etching unit, and mechanically or electrostatically fixed. An RF(radio frequency) bias is applied from a bias power source 38 to the wafer 29 through a support base 37 and the jig 36 and cooled to '-10 deg.C' or below by using a refrigerant by a low temperature circulator 39. A treating oxygen gas supplied from a pipeline 46 to a source flow chamber 42 is produced with a plasma by a high frequency voltage applied from a source flow power source 47 to a antenna 43, fed to the chamber 35 by an inner coil 44 and an outer coil 45, uniformly confined in the chamber 35 by a magnet 41, attracted and accelerated by a potential of the wafer 29 of an RF bias voltage to etch an orifice plate on the wafer 29. A temperature of an adhesive material 3a is suppressed to a Tg or below.

    LIGHT EMITTING ELEMENT AND PROTECTION MATERIAL FOR IT

    公开(公告)号:JPH1197169A

    公开(公告)日:1999-04-09

    申请号:JP26921897

    申请日:1997-09-17

    Abstract: PROBLEM TO BE SOLVED: To provide a light emitting element having a log lifetime and a protection material for the light emitting element in which deterioration resulting from a growth of so-called dark spot is precluded. SOLUTION: An anode electrode (transparent electrode) 11, an organic EL layer 12, and a cathode electrode (low work function metal electrode) 13 are formed on a transparent base board 10 one over another, and thereover a protection layer 14 is formed. The protection layer 14 is formed, for example by doping a glass forming material (host) consisting of oxide or sulfide of Si, Zn, etc., with a glass modifying material (guest) consisting of a simple substance of Sc, Ce, etc., or their oxide or sulfide. The glass modifying material cuts the mesh of molecules of glass forming material and intrudes into the voids generated between molecules of glass forming material. Therefore, the protection layer 14 becomes a glass material having a denser structure than glass consisting solely of the glass forming material, and it is possible to prevent O2 or H2 O from intruding into the cathode electrode 13.

    Semiconductor device, and method of manufacturing the same
    13.
    发明专利
    Semiconductor device, and method of manufacturing the same 审中-公开
    半导体器件及其制造方法

    公开(公告)号:JP2011171614A

    公开(公告)日:2011-09-01

    申请号:JP2010035525

    申请日:2010-02-22

    Inventor: KONO ICHIRO

    CPC classification number: H01L2224/11

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device improved in a yield by preventing generation of a resist residue, and to provide a method of manufacturing the same. SOLUTION: This semiconductor device includes: rewiring 19 formed on the upper surface of a semiconductor device wafer 10; columnar electrodes 21 formed on lands of the rewiring 19; first thermoplastic resin layer 41 covering the rewiring 19; and a filler-containing thermoplastic resin layer 42 covering the first thermoplastic resin layer, covering upper side faces of the columnar electrodes 21, and exposing the upper surfaces of the columnar electrodes 21. A film composed of a three-layer structure of the first thermoplastic resin layer, the filler-containing thermoplastic resin layer and a second thermoplastic resin layer is heated, pressed and stuck in a pressure-reduced environment, and thereafter the second thermoplastic resin layer is removed. Since a resist peeling process does not exist, generation of the resist residue can be prevented. By sticking the first thermoplastic resin layer on wires to be heated, the first thermoplastic resin layer is softened and sunk, and thereby spread between the wires so that the wires can be tightly covered. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:提供通过防止产生抗蚀剂残渣而提高成品率的半导体器件,并提供其制造方法。 解决方案:该半导体器件包括:形成在半导体器件晶片10的上表面上的重新布线19; 形成在重新布线19的焊盘上的柱状电极21; 覆盖重新布线19的第一热塑性树脂层41; 以及覆盖第一热塑性树脂层的填充剂热塑性树脂层42,覆盖柱状电极21的上侧面,露出柱状电极21的上表面。由第一热塑性树脂的三层结构构成的膜 树脂层,含有填料的热塑性树脂层和第二热塑性树脂层在减压环境中加热,压制和粘贴,然后除去第二热塑性树脂层。 由于不存在抗蚀剂剥离处理,因此可以防止抗蚀剂残渣的产生。 通过将第一热塑性树脂层粘贴在待加热的导线上,第一热塑性树脂层软化并沉没,从而在导线之间扩展,使得电线可以被紧密地覆盖。 版权所有(C)2011,JPO&INPIT

    Method of manufacturing semiconductor device
    14.
    发明专利
    Method of manufacturing semiconductor device 审中-公开
    制造半导体器件的方法

    公开(公告)号:JP2011014844A

    公开(公告)日:2011-01-20

    申请号:JP2009160049

    申请日:2009-07-06

    Inventor: KONO ICHIRO

    Abstract: PROBLEM TO BE SOLVED: To allow a process line for a semiconductor wafer having a diameter of 300 mm to process a semiconductor wafer having a diameter smaller than 300 mm.SOLUTION: An upper surface side of a semiconductor wafer 23 for transfer composed of a mere silicon substrate having a diameter of 300 mm is ground substantially to a half of its thickness to be removed. A semiconductor wafer 21 which has a diameter of 200 mm and also has an integrated circuit on an upper surface of the semiconductor wafer 23 for transfer is fixed directly on an upper surface of the semiconductor wafer for transfer. In this case, the semiconductor wafer 21 has its lower surface side ground to be thinner. In the fixation state, the total thickness of the semiconductor wafer 23 for transfer and the semiconductor wafer 21 is substantially equal to the starting thickness of the semiconductor wafer 23 for transfer. Consequently, the semiconductor wafer 21 having the diameter of 200 mm can be processed through the process line for the semiconductor wafer having the diameter of 300 mm.

    Abstract translation: 要解决的问题:为了允许直径为300mm的半导体晶片的处理线来处理直径小于300mm的半导体晶片。解决方案:用于转移的半导体晶片23的上表面侧仅由 将直径为300mm的硅衬底基本上研磨至其厚度的一半以被去除。 直径为200mm的半导体晶片21和用于转印的半导体晶片23的上表面上的集成电路直接固定在半导体晶片的上表面上用于转印。 在这种情况下,半导体晶片21的下表面侧接地较薄。 在固定状态下,用于转印的半导体晶片23和半导体晶片21的总厚度基本上等于用于转印的半导体晶片23的起始厚度。 因此,可以通过直径为300mm的半导体晶片的处理线来加工直径为200mm的半导体晶片21。

    Semiconductor device, and mounting structure thereof
    15.
    发明专利
    Semiconductor device, and mounting structure thereof 审中-公开
    半导体器件及其安装结构

    公开(公告)号:JP2010219422A

    公开(公告)日:2010-09-30

    申请号:JP2009066497

    申请日:2009-03-18

    Inventor: KONO ICHIRO

    Abstract: PROBLEM TO BE SOLVED: To lessen stress caused by a thermal expansion coefficient difference between a resin sealing film in a semiconductor device and an insulating board in a wiring board, in a mounting structure of the semiconductor device, in which the semiconductor device having a columnar electrode and the resin sealing film is mounted on the wiring board in a face-down way.
    SOLUTION: A negative expansion layer 13 formed of either of zirconium tungstate, silicon oxide and manganese nitride, is prepared on a lower surface of the sealing film 12 in the semiconductor device 1. The insulating board 17 in the wiring board 16 is formed of material having smaller thermal expansion coefficient than that of the sealing film 12 consisting of epoxy resin etc., the material for the insulating board being, for example, either of silicon, aluminum nitride, alumina, aramid nonwoven fabric base material epoxy resin. Thereby, the stress caused by the thermal expansion coefficient difference between the sealing film 12 in the semiconductor device 1 and the insulating board 17 in the wiring board 16 can be reduced.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 解决的问题:为了减轻半导体器件中的树脂密封膜与布线板中的绝缘板之间的热膨胀系数差引起的应力,在半导体器件的安装结构中,半导体器件 具有柱状电极,树脂密封膜以面朝下的方式安装在布线板上。 解决方案:在半导体器件1中的密封膜12的下表面上制备由钨酸锆,氧化硅和氮化锰中的任一种形成的负极膨胀层13.布线板16中的绝缘板17 由具有比由环氧树脂等构成的密封膜12的热膨胀系数小的材料形成,绝缘板的材料例如是硅,氮化铝,氧化铝,芳族聚酰胺无纺布基材环氧树脂。 由此,可以减少半导体装置1的密封膜12与布线基板16的绝缘基板17之间的热膨胀系数差引起的应力。 版权所有(C)2010,JPO&INPIT

    FORMING METHOD FOR INK JET PRINTER HEAD

    公开(公告)号:JP2002160373A

    公开(公告)日:2002-06-04

    申请号:JP2000360585

    申请日:2000-11-28

    Inventor: KONO ICHIRO

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of an ink jet printer head capable of forming an orifice plate having freely selectable thickness and free from bends, wrinkles, sinking or the like. SOLUTION: A thin film layer 50 is formed on a support body 49, on which an adhesive layer 51 is formed. A metal mask is formed on the adhesive layer 51, and a hollow part (a future ink channel 54) having a depth d1 and the residual part of the thin film layer (a future orifice plate 50-1) having a thickness d2 are simultaneously formed by subjecting the adhesive layer 51 to etching and then the thin film layer 50 to half etching in accordance with the mask pattern so as to create an intermediate body 55 by removing the metal mask. The top and bottom of the intermediate body 55 is reversed and pasted to a main substrate 60 in which a heating part 57-1, wiring electrodes 58, 59 and an ink supply groove 61 or the like are previously formed and an orifice 64 is formed in accordance with the mask pattern 63-1 of the metal film 63 formed on top of the main substrate to complete the ink jet printer head 65.

    SYSTEM AND METHOD FOR PROGRAM RESERVATION AS WELL AS STORAGE MEDIUM

    公开(公告)号:JP2002077746A

    公开(公告)日:2002-03-15

    申请号:JP2000263540

    申请日:2000-08-31

    Inventor: KONO ICHIRO

    Abstract: PROBLEM TO BE SOLVED: To provide a system and a method for a program reservation wherein the utility of both the program reservation and an advertisement provision is enhanced, by a method wherein advertisement information considering the attribute of a user is added to program information to be transmitted, and to provide a storage medium in which their control program is stored. SOLUTION: The program reservation system is provided with a communication terminal which transmits program-related information about a program to recorded, a video device which receives the program information and which reserves the picture recording of the program, an advertisement provision terminal whereby the advertisement information which contains advertisement data about an advertisement content and viewer-attribute information about the transmission destination of the advertisement data is provided, and a server. The server is provided with a means which stores the program information so as to correspond to the advertisement information, a means which extracts the program information from a program storage means on the basis of the program-related information, a means which extracts the advertisement data contained in the advertisement information corresponding to the extracted program information, and a means which transmits the program information and the advertisement data to the communication terminal.

    METHOD FOR MANUFACTURING INK JET PRINTER HEAD

    公开(公告)号:JP2002001968A

    公开(公告)日:2002-01-08

    申请号:JP2000184828

    申请日:2000-06-20

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing ink jet printer head by which a number of jet nozzles are properly formed together. SOLUTION: Heating parts, wiring electrodes, partitions, ink supply channels and ink suppy holes are formed on a silicon substrate 20. An orifice plat 21 is stuck on the top layer of them, and a head assembly which has plural print heads is formed. A thin metal film 22 formed on the plate 21 over the whole face is patterned to form a metal mask 23 corresponding to the jet mozzles and the contact holes. Then a characteristic process of this patent is done. That is, cut lines 24 are formed on the plate 21 along the dicing lines on the substrate 20. The plate 21 is cut off at every print head 25, so that warps in the substrate 20 vanish. In a next process, the jet nozzles 26 and the contact holes 27 are made according to the pattern of the metal mask 23.

    THERMAL INK JET HEAD
    19.
    发明专利

    公开(公告)号:JP2000127394A

    公开(公告)日:2000-05-09

    申请号:JP30010698

    申请日:1998-10-21

    Abstract: PROBLEM TO BE SOLVED: To provide a thermal ink jet head having a heating element exhibiting resistance against cavitation damage. SOLUTION: The heating element 22 of a thermal ink jet head 10 comprises a resistor film of Ta-Si-O formed by thin film technology and shaped by pholithography to have square outline and an inner circular excavated part 33. The excavated part 33 has diameter equal to or larger than that of an orifice 32 and it is formed to satisfy a relation '(L-D)/2>=4 μm', where L is the length of short side of a heating part 22 and D is the diameter of the circular excavated part 33. Even if the accuracy of pattern has fluctuation Δd of ±2 μm at the time of forming the excavated part 33, a heating width W of 2 μm or more is ensured from the fringe of the heating part 22. Since the heating part 22 is not present directly under the orifice 32, a cavitation destructing force concentrating directly under the orifice has no effect on the heating part 22 at the time of extinction of a bubble.

    ELECTRIC FIELD LIGHT EMITTING ELEMENT

    公开(公告)号:JP2000068560A

    公开(公告)日:2000-03-03

    申请号:JP25180398

    申请日:1998-08-24

    Inventor: KONO ICHIRO

    Abstract: PROBLEM TO BE SOLVED: To provide a long-life electric field light emitting element which has high capability of blocking outside air to retard deterioration. SOLUTION: A transparent electrode 2 of ITO, an organic EL layer 3, and opposed electrodes 4 of MgIn are formed on a transparent substrate 1, and a protective coat 5 of In2O3(ZnO)x (x>=0) having a structure of hexagonal crystal layer is formed so as to cover a light emitting portion. Such construction allows a dense protective coat 5 to prevent the entry of outside air, which allows the opposed electrodes 4 to be prevented from being oxidized or the interface between the opposed electrodes 4 and the organic EL layer 3 to be prevented from peeling. This provides a long-life electroluminescent cell which retards deterioration.

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