REACTOR FOR CHEMICAL VAPOUR PHASE DEPOSITION

    公开(公告)号:CA2257513A1

    公开(公告)日:1999-06-23

    申请号:CA2257513

    申请日:1998-12-22

    Inventor: BERTONE DANIELE

    Abstract: A reactor is described where the substrates subjected to the deposition process are maintained in a substantially vertical position and are imparted a relative motion with respect to the nozzles whence the carrier gas that carries the deposition reactants exits. Preferably the reactor presents an altogether cylindrical shape, with the substrates mounted on a carousel structure rotating around a main axis coinciding with the main axis of the case of the reactor. The diffusion of the carrier gas and of the reactants is effected starting from a head which projects from the vault of the case of the reactor and which extends inside the carousel structure where the substrates are mounted. The head presents a plurality of nozzles, uniformly distributed on its periphery, for the release of the carrier gas and of the reactants borne thereby. Preferred application for the deposition of semiconductors starting from metal-organic reactants in vapour phase, in particular for integrated optics applications.

    VAPOUR GENERATOR FOR CHEMICAL VAPOUR DEPOSITION SYSTEMS

    公开(公告)号:CA2110647C

    公开(公告)日:1997-09-30

    申请号:CA2110647

    申请日:1993-12-03

    Inventor: BERTONE DANIELE

    Abstract: The vapour generator for chemical vapour deposition plants allows the extraction of metalorganic vapours from liquid or solid sources. It mainly consists of a container into which a gas flows in, and as it passes near the reagent, it is saturated with the vapours produced and transports them to the reaction chamber. Only the generator is brought to a temperature which is higher than room temperature so as to obtain a vapour which is saturated with a high quantity of reagent. To avoid vapour condensation in the pipe system transporting it from the generator to the reaction chamber, it is diluted with a carrier gas directly in the body of the heated generator, reducing in this way the condensation temperature of vapour which becomes unsaturated. For this purpose, the generator contains a dilution bypass-line in the upper base into which the carrier gas is made to flow. The pipe system going from the generator to the reaction chamber can be held at room temperature without any condensation risks.

    15.
    发明专利
    未知

    公开(公告)号:DE600503T1

    公开(公告)日:1994-12-22

    申请号:DE93119521

    申请日:1993-12-03

    Inventor: BERTONE DANIELE

    Abstract: The vapour generator for chemical vapour deposition plants allows the extraction of metalorganic vapours from liquid or solid sources. It mainly consists of a container into which a gas flows in, and as it passes near the reagent, it is saturated with the vapours produced and transports them to the reaction chamber. Only the generator is brought to a temperature which is higher than room temperature so as to obtain a vapour which is saturated with a high quantity of reagent. To avoid vapour condensation in the pipe system transporting it from the generator to the reaction chamber, it is diluted with a carrier gas directly in the body of the heated generator, reducing in this way the condensation temperature of vapour which becomes unsaturated. For this purpose, the generator contains a dilution bypass-line in the upper base into which the carrier gas is made to flow. The pipe system going from the generator to the reaction chamber can be held at room temperature without any condensation risks.

    18.
    发明专利
    未知

    公开(公告)号:ITTO920981D0

    公开(公告)日:1992-12-04

    申请号:ITTO920981

    申请日:1992-12-04

    Inventor: BERTONE DANIELE

    Abstract: The vapour generator for chemical vapour deposition plants allows the extraction of metalorganic vapours from liquid or solid sources. It mainly consists of a container into which a gas flows in, and as it passes near the reagent, it is saturated with the vapours produced and transports them to the reaction chamber. Only the generator is brought to a temperature which is higher than room temperature so as to obtain a vapour which is saturated with a high quantity of reagent. To avoid vapour condensation in the pipe system transporting it from the generator to the reaction chamber, it is diluted with a carrier gas directly in the body of the heated generator, reducing in this way the condensation temperature of vapour which becomes unsaturated. For this purpose, the generator contains a dilution bypass-line in the upper base into which the carrier gas is made to flow. The pipe system going from the generator to the reaction chamber can be held at room temperature without any condensation risks.

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