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公开(公告)号:IT223201Z2
公开(公告)日:1995-06-13
申请号:ITTO910129
申请日:1991-06-04
Applicant: CSELT CENTRO STUDI LAB TELECOM
Inventor: BERTONE DANIELE
IPC: C23C16/455 , C30B25/14 , F16K
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12.
公开(公告)号:ITTO910129U1
公开(公告)日:1992-12-05
申请号:ITTO910129
申请日:1991-06-04
Applicant: CSELT CENTRO STUDI LAB TELECOM
Inventor: BERTONE DANIELE
IPC: C23C16/455 , C30B25/14 , F16K20060101
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公开(公告)号:CA2257513A1
公开(公告)日:1999-06-23
申请号:CA2257513
申请日:1998-12-22
Applicant: CSELT CENTRO STUDI LAB TELECOM
Inventor: BERTONE DANIELE
IPC: C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , H01L21/205
Abstract: A reactor is described where the substrates subjected to the deposition process are maintained in a substantially vertical position and are imparted a relative motion with respect to the nozzles whence the carrier gas that carries the deposition reactants exits. Preferably the reactor presents an altogether cylindrical shape, with the substrates mounted on a carousel structure rotating around a main axis coinciding with the main axis of the case of the reactor. The diffusion of the carrier gas and of the reactants is effected starting from a head which projects from the vault of the case of the reactor and which extends inside the carousel structure where the substrates are mounted. The head presents a plurality of nozzles, uniformly distributed on its periphery, for the release of the carrier gas and of the reactants borne thereby. Preferred application for the deposition of semiconductors starting from metal-organic reactants in vapour phase, in particular for integrated optics applications.
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公开(公告)号:CA2110647C
公开(公告)日:1997-09-30
申请号:CA2110647
申请日:1993-12-03
Applicant: CSELT CENTRO STUDI LAB TELECOM
Inventor: BERTONE DANIELE
IPC: H01L21/205 , C23C16/448 , C23C16/00 , C30B25/14
Abstract: The vapour generator for chemical vapour deposition plants allows the extraction of metalorganic vapours from liquid or solid sources. It mainly consists of a container into which a gas flows in, and as it passes near the reagent, it is saturated with the vapours produced and transports them to the reaction chamber. Only the generator is brought to a temperature which is higher than room temperature so as to obtain a vapour which is saturated with a high quantity of reagent. To avoid vapour condensation in the pipe system transporting it from the generator to the reaction chamber, it is diluted with a carrier gas directly in the body of the heated generator, reducing in this way the condensation temperature of vapour which becomes unsaturated. For this purpose, the generator contains a dilution bypass-line in the upper base into which the carrier gas is made to flow. The pipe system going from the generator to the reaction chamber can be held at room temperature without any condensation risks.
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公开(公告)号:DE600503T1
公开(公告)日:1994-12-22
申请号:DE93119521
申请日:1993-12-03
Applicant: CSELT CENTRO STUDI LAB TELECOM
Inventor: BERTONE DANIELE
IPC: H01L21/205 , C23C16/448 , C23C16/44 , C23C16/18
Abstract: The vapour generator for chemical vapour deposition plants allows the extraction of metalorganic vapours from liquid or solid sources. It mainly consists of a container into which a gas flows in, and as it passes near the reagent, it is saturated with the vapours produced and transports them to the reaction chamber. Only the generator is brought to a temperature which is higher than room temperature so as to obtain a vapour which is saturated with a high quantity of reagent. To avoid vapour condensation in the pipe system transporting it from the generator to the reaction chamber, it is diluted with a carrier gas directly in the body of the heated generator, reducing in this way the condensation temperature of vapour which becomes unsaturated. For this purpose, the generator contains a dilution bypass-line in the upper base into which the carrier gas is made to flow. The pipe system going from the generator to the reaction chamber can be held at room temperature without any condensation risks.
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公开(公告)号:DE535308T1
公开(公告)日:1994-02-24
申请号:DE92109299
申请日:1992-06-02
Applicant: CSELT CENTRO STUDI LAB TELECOM
Inventor: BERTONE DANIELE
IPC: C23C16/455 , C30B25/14 , C23C16/44
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17.
公开(公告)号:CA2069694A1
公开(公告)日:1992-12-05
申请号:CA2069694
申请日:1992-05-27
Applicant: CSELT CENTRO STUDI LAB TELECOM
Inventor: BERTONE DANIELE
IPC: C23C16/455 , C30B25/14 , C23C16/52
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公开(公告)号:ITTO920981D0
公开(公告)日:1992-12-04
申请号:ITTO920981
申请日:1992-12-04
Applicant: CSELT CENTRO STUDI LAB TELECOM
Inventor: BERTONE DANIELE
IPC: H01L21/205 , C23C16/448 , H01L21/38
Abstract: The vapour generator for chemical vapour deposition plants allows the extraction of metalorganic vapours from liquid or solid sources. It mainly consists of a container into which a gas flows in, and as it passes near the reagent, it is saturated with the vapours produced and transports them to the reaction chamber. Only the generator is brought to a temperature which is higher than room temperature so as to obtain a vapour which is saturated with a high quantity of reagent. To avoid vapour condensation in the pipe system transporting it from the generator to the reaction chamber, it is diluted with a carrier gas directly in the body of the heated generator, reducing in this way the condensation temperature of vapour which becomes unsaturated. For this purpose, the generator contains a dilution bypass-line in the upper base into which the carrier gas is made to flow. The pipe system going from the generator to the reaction chamber can be held at room temperature without any condensation risks.
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公开(公告)号:ITTO910129V0
公开(公告)日:1991-06-04
申请号:ITTO910129
申请日:1991-06-04
Applicant: CSELT CENTRO STUDI LAB TELECOM
Inventor: BERTONE DANIELE
IPC: C23C16/455 , C30B25/14
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