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    REACTOR FOR CHEMICAL VAPOR DEPOSITION
    1.
    发明专利
    REACTOR FOR CHEMICAL VAPOR DEPOSITION 失效

    公开(公告)号：JPH11260739A

    公开(公告)日：1999-09-24

    申请号：JP37586298

    申请日：1998-12-21

    Applicant: CSELT CENTRO STUDI LAB TELECOM

    Inventor： BERTONE DANIELE

    IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/48 ,  H01L21/205

    Abstract: PROBLEM TO BE SOLVED: To provide a reactor for chemical vapor deposition in which a deposition process can be attained by a controlled method. SOLUTION: A substrate W to be deposited is held at a substantially vertical position, relative movement is applied to a nozzle 26, and a reactor having therein a gas for carriage of deposition reactive material is provided. Preferably the reactor has a generally cylindrical shape, the substrate W is placed on a carousel structure 7 rotating around a main axis X8, the main axis X8 coinciding with a main axis of a case of the reactor. Diffusion of the carrier gas and reactive material starts from a head 11 projected from an arch ceilling of the case of the reactor and extended into the carousel structure 7 having the substrate W placed thereon. The head 11, which has a plurality of nozzles 26 uniformly distributed along its circumference, ejects the carrier gas and reactive material. The deposition is applied preferably to the deposition of semiconductor starting with vapor phase metal/organic compound, and in particular, to integrated optics.

    3.
    发明专利
    未知

    公开(公告)号：DE69301903D1

    公开(公告)日：1996-04-25

    申请号：DE69301903

    申请日：1993-12-03

    Applicant: CSELT CENTRO STUDI LAB TELECOM

    Inventor： BERTONE DANIELE

    IPC: H01L21/205 ,  C23C16/448 ,  C23C16/44 ,  C23C16/18

    Abstract: The vapour generator for chemical vapour deposition plants allows the extraction of metalorganic vapours from liquid or solid sources. It mainly consists of a container into which a gas flows in, and as it passes near the reagent, it is saturated with the vapours produced and transports them to the reaction chamber. Only the generator is brought to a temperature which is higher than room temperature so as to obtain a vapour which is saturated with a high quantity of reagent. To avoid vapour condensation in the pipe system transporting it from the generator to the reaction chamber, it is diluted with a carrier gas directly in the body of the heated generator, reducing in this way the condensation temperature of vapour which becomes unsaturated. For this purpose, the generator contains a dilution bypass-line in the upper base into which the carrier gas is made to flow. The pipe system going from the generator to the reaction chamber can be held at room temperature without any condensation risks.

    Vapour Generator for Chemical Vapour Deposition Systems
    5.
    发明专利
    Vapour Generator for Chemical Vapour Deposition Systems 未知

    公开(公告)号：CA2110647A1

    公开(公告)日：1994-06-05

    申请号：CA2110647

    申请日：1993-12-03

    Applicant: CSELT CENTRO STUDI LAB TELECOM

    Inventor： BERTONE DANIELE

    IPC: H01L21/205 ,  C23C16/448 ,  C23C16/00 ,  C30B25/14

    Abstract: The vapour generator for chemical vapour deposition plants allows the extraction of metalorganic vapours from liquid or solid sources. It mainly consists of a container into which a gas flows in, and as it passes near the reagent, it is saturated with the vapours produced and transports them to the reaction chamber. Only the generator is brought to a temperature which is higher than room temperature so as to obtain a vapour which is saturated with a high quantity of reagent. To avoid vapour condensation in the pipe system transporting it from the generator to the reaction chamber, it is diluted with a carrier gas directly in the body of the heated generator, reducing in this way the condensation temperature of vapour which becomes unsaturated. For this purpose, the generator contains a dilution bypass-line in the upper base into which the carrier gas is made to flow. The pipe system going from the generator to the reaction chamber can be held at room temperature without any condensation risks.

    DEVICE FOR INTRODUCING REAGENTS INTO AN ORGANOMETALLIC VAPOUR PHASE DEPOSITION APPARATUS
    6.
    发明专利
    DEVICE FOR INTRODUCING REAGENTS INTO AN ORGANOMETALLIC VAPOUR PHASE DEPOSITION APPARATUS 未知

    公开(公告)号：CA2069694C

    公开(公告)日：1999-01-05

    申请号：CA2069694

    申请日：1992-05-27

    Applicant: CSELT CENTRO STUDI LAB TELECOM

    Inventor： BERTONE DANIELE

    IPC: C23C16/455 ,  C30B25/14 ,  C23C16/52

    Abstract: A device for introducing reagents into organometallic vapour phase deposition apparatus is disclosed which comprises only a single valve body and does not require the pipe segments of prior known vent/run systems, thereby overcoming the problem of stagnation of gases in dead spaces of the valve. The device comprises a valve body including gas conduit lines to carry reagent or carrier gases and pneumatic actuator means for switching gas flows between the gas conduit lines, including a pair of inlets for introducing compressed air used control the pneumatic actuator means.

    7.
    发明专利
    未知

    公开(公告)号：DE69301903T2

    公开(公告)日：1996-09-05

    申请号：DE69301903

    申请日：1993-12-03

    Applicant: CSELT CENTRO STUDI LAB TELECOM

    Inventor： BERTONE DANIELE

    IPC: H01L21/205 ,  C23C16/448 ,  C23C16/44 ,  C23C16/18

    Abstract: The vapour generator for chemical vapour deposition plants allows the extraction of metalorganic vapours from liquid or solid sources. It mainly consists of a container into which a gas flows in, and as it passes near the reagent, it is saturated with the vapours produced and transports them to the reaction chamber. Only the generator is brought to a temperature which is higher than room temperature so as to obtain a vapour which is saturated with a high quantity of reagent. To avoid vapour condensation in the pipe system transporting it from the generator to the reaction chamber, it is diluted with a carrier gas directly in the body of the heated generator, reducing in this way the condensation temperature of vapour which becomes unsaturated. For this purpose, the generator contains a dilution bypass-line in the upper base into which the carrier gas is made to flow. The pipe system going from the generator to the reaction chamber can be held at room temperature without any condensation risks.

    9.
    发明专利
    未知

    公开(公告)号：IT1257434B

    公开(公告)日：1996-01-17

    申请号：ITTO920981

    申请日：1992-12-04

    Applicant: CSELT CENTRO STUDI LAB TELECOM

    Inventor： BERTONE DANIELE

    IPC: H01L21/205 ,  C23C16/448 ,  H01L

    Abstract: The vapour generator for chemical vapour deposition plants allows the extraction of metalorganic vapours from liquid or solid sources. It mainly consists of a container into which a gas flows in, and as it passes near the reagent, it is saturated with the vapours produced and transports them to the reaction chamber. Only the generator is brought to a temperature which is higher than room temperature so as to obtain a vapour which is saturated with a high quantity of reagent. To avoid vapour condensation in the pipe system transporting it from the generator to the reaction chamber, it is diluted with a carrier gas directly in the body of the heated generator, reducing in this way the condensation temperature of vapour which becomes unsaturated. For this purpose, the generator contains a dilution bypass-line in the upper base into which the carrier gas is made to flow. The pipe system going from the generator to the reaction chamber can be held at room temperature without any condensation risks.

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