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    SILICON-BASED SCHOTTKY BARRIER DETECTOR WITH IMPROVED RESPONSIVITY
    12.
    发明授权
    SILICON-BASED SCHOTTKY BARRIER DETECTOR WITH IMPROVED RESPONSIVITY 有权

    公开(公告)号：EP2545593B1

    公开(公告)日：2018-12-12

    申请号：EP11753819.9

    申请日：2011-03-03

    Applicant: Cisco Technology, Inc.

    Inventor： PATEL, Vipulkumar ,  GOTHOSKAR, Prakash ,  WEBSTER, Mark ,  LANG, Christopher, J.

    IPC: H01L31/108 ,  H01L31/09

    CPC classification number: H01L31/101 ,  H01L31/1085

    Abstract: A planar, waveguide-based silicon Schottky barrier photodetector includes a third terminal in the form of a field plate to improve the responsivity of the detector. Preferably, a silicide used for the detection region is formed during a processing step where other silicide contact regions are being formed. The field plate is preferably formed as part of the first or second layer of CMOS metallization and is controlled by an applied voltage to modify the electric field in the vicinity of the detector's silicide layer. By modifying the electric field, the responsivity of the device is "tuned" so as to adjust the momentum of "hot" carriers (electrons or holes, depending on the conductivity of the silicon) with respect to the Schottky barrier of the device. The applied potential functions to align with the direction of momentum of the "hot" carriers in the preferred direction "normal" to the silicon-silicide interface, allowing for an increased number to move over the Schottky barrier and add to the generated photocurrent.

    ELECTRO-OPTICAL MODULATOR WITH A VERTICAL CAPACITOR STRUCTURE
    13.
    发明公开
    ELECTRO-OPTICAL MODULATOR WITH A VERTICAL CAPACITOR STRUCTURE 审中-公开
    木质素调节剂麻醉剂维生素KONDENSATORSTRUKTUR

    公开(公告)号：EP3097450A1

    公开(公告)日：2016-11-30

    申请号：EP15703677.3

    申请日：2015-01-24

    Applicant: Cisco Technology, Inc.

    Inventor： PATEL, Vipulkumar ,  GOTHOSKAR, Prakash

    IPC: G02F1/025

    Abstract: An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.

    Abstract translation: 光调制器可以包括下波导，上波导和介于其间的电介质层。 当在下波导和上波导之间产生电压电位时，这些层形成硅 - 绝缘体硅电容器（也称为SISCAP）引导件，其提供通过调制器的光信号的有效的高速光调制。 在一个实施例中，至少一个波导包括在电荷调制区域处对准的相应的脊部分，其可以有助于限制光学调制器中的光学模式（例如，在宽度方向上）。 在另一个实施例中，脊部可以形成在下波导和上波导两者上。 这些脊部可以在垂直方向（例如，厚度方向）上对准，使得脊重叠，这可以通过使电荷调制区域中的光学模式居中来进一步提高光学效率。

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