公开(公告)号：JP2006185964A

公开(公告)日：2006-07-13

申请号：JP2004374988

申请日：2004-12-24

Applicant: EUDYNA DEVICES INC

Inventor： KOMATANI TSUTOMU ,  GOMI SHUNJI

IPC: H01L21/3065 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01S5/183 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a GaN system and an SiC system semiconductor device which suppresses the variation in the initial characteristics and the energization degradation. SOLUTION: An etching gas used for plasma etching enters the surface of a semiconductor crystal 12 in the ionized state from the opening of a mask material 13 so as to etch the semiconductor crystal 12 to the extent of only a predetermined depth. Nitrogen gas mixed in the etching gas is given high energy so as to be activated. It reacts with the atom of the semiconductor crystal 12 of an etching side and a wall surface so that nitrogen termination fixation of the bond is carried out. The composition of a surface layer where the nitrogen termination fixation is carried out, for example, becomes Ga x N y when the semiconductor crystal 12 is a GaN system crystal, and when it is an SiC system crystal, it becomes Si x N y so that an ultra thin nitride film is formed, and chemical stabilization is attained. On such a crystal face where nitrogen termination fixation is carried out, the corrosion (oxidization) by moisture or oxygen does not advance even in the case of energization to a device, so that the variation in the initial characteristics of a semiconductor device and energization degradation is controlled, and as a result reliability is improved. COPYRIGHT: (C)2006,JPO&NCIPI

公开(公告)号：JP2005317684A

公开(公告)日：2005-11-10

申请号：JP2004132124

申请日：2004-04-27

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： KOMATANI TSUTOMU

IPC: H01L21/3065 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311 ,  H01L21/335 ,  H01L21/338 ,  H01L29/20 ,  H01L29/778 ,  H01L29/812

CPC classification number: H01L29/66462 ,  H01L21/30621 ,  H01L21/31116 ,  H01L29/2003

Abstract: PROBLEM TO BE SOLVED: To provide a dry etching method by which the occurrence of damages when dry etching is executed to a GaN system semiconductor layer can be suppressed.
SOLUTION: At least two-stage etching processing is adopted when dry etching is executed to an etching layer 12 (a layer as an etching target) provided in contact with a GaN system semiconductor crystal layer 11, that is, the first process, in which at first the etching layer 12 is subjected to high-speed (high-energy) etching in its depthwise direction by using a fluorine system gas of SF
6 or NF
3 singulary or a mixed gas of the fluorine system gas and a chlorine system gas of any one of SiCl
4 , BCl
3 or Cl
2 , and the second process in which the remaining depth directional region is subjected to low-speed (low-energy) etching. Therefore, damages to the GaN system semiconductor crystal layer 11 can be reduced. It is also possible to contribute to the realization of a GaN system semiconductor device without fluctuations of initial characteristics and degradation in conductivity.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供可以抑制对GaN系半导体层进行干蚀刻时的损伤发生的干式蚀刻方法。 解决方案：当对与GaN系半导体晶体层11接触设置的蚀刻层12（作为蚀刻对象的层）进行干法蚀刻时，至少采用两阶段蚀刻处理，即第一工序 ，其中首先通过使用SF 6 或NF 3 一种或氟体系气体和SiCl 4 SBB，BCl 3，SB 3或Cl SB 2中任一种的氯系气体的混合气体， 以及剩余深度方向区域进行低速（低能量）蚀刻的第二工序。 因此，能够降低GaN系半导体晶体层11的损伤。 也可以有助于实现GaN系统半导体器件，而不会引起初始特性的波动和导电性的劣化。 版权所有（C）2006，JPO＆NCIPI