Abstract:
A free-standing non-planar polycrystalline CVD synthetic diamond component which comprises a nucleation face and a growth face, the nucleation face comprising smaller grains than the growth face, the nucleation face having a surface roughness R a no more than 50 nm, wherein the free-standing non-planar polycrystalline CVD synthetic diamond component has a longest linear dimension when projected onto a plane of no less than 5 mm and is substantially crack free over at least a central region thereof, wherein the central region is at least 70% of a total area of the free-standing non-planar polycrystalline CVD synthetic diamond component, wherein the central region has no cracks which intersect both external major faces of the free-standing non-planar polycrystalline CVD synthetic diamond component and extend greater than 2 mm in length.
Abstract:
A method of making fancy pale blue or fancy pale blue/green CVD diamond material is described. The method comprises irradiating single crystal diamond material that has been grown by a CVD process with electrons to introduce isolated vacancies into the diamond material, the irradiated diamond material having (or after a further post- irradiation treatment having) a total vacancy concentration [VT] and a path length L such that [VT] x L is at least 0.072 ppm cm and at most 0.36 ppm cm, and the diamond material becomes fancy pale blue or fancy pale blue/green in colour. Fancy pale blue diamonds are also described.
Abstract:
A method of coating a non-refractory and/or non-planar substrate 2 with synthetic diamond material using a microwave plasma chemical vapour deposition (MWCVD) synthesis technique is described. The method details forming a composite substrate assembly comprising: a support substrate 2 with an upper surface 4 and one or more electrically conductive refractory guards 6 disposed over the upper surface 4 of the support substrate 2, extending to a height hg above the upper surface 4 of the support substrate 2; and one or more non-refractory and/or non-planar substrates 8 disposed over the upper surface 4 of the support substrate 2, wherein the height hs above the upper surface 4 of the support substrate 2, where the height hs and where the difference in height hg hs lies in the range of 0.2-10mm. The composite substrate assembly is located within a plasma chamber of the microwave plasma CVD reactor (Figure 5). The process gases are fed into the plasma chamber with microwave plasma where plasma is formed at a location over the composite substrate assembly thus growing synthetic diamond on the one or more non-refractory and/or non-planar substrates.
Abstract:
A method of dressing a wheel using a polycrystalline CVD synthetic diamond dresser, the method comprising: rotating the wheel; and contacting a working surface of the wheel with a working surface of the polycrystalline CVD synthetic diamond dresser, wherein the polycrystalline CVD synthetic diamond dresser is oriented such that a leading edge of the working surface of the polycrystalline CVD synthetic diamond dresser is formed of larger grains than a trailing edge of the working surface of the polycrystalline CVD synthetic diamond dresser.