METHOD FOR MAKING DIAMOND LAYERS BY CVD
    14.
    发明公开
    METHOD FOR MAKING DIAMOND LAYERS BY CVD 审中-公开
    VERFAHREN ZUR HERSTELLUNG VON DIAMANTSCHICHTEN MITTELS CVD

    公开(公告)号:EP2931935A1

    公开(公告)日:2015-10-21

    申请号:EP13799087.5

    申请日:2013-12-04

    Abstract: A method of coating a non-refractory and/or non-planar substrate 2 with synthetic diamond material using a microwave plasma chemical vapour deposition (MWCVD) synthesis technique is described. The method details forming a composite substrate assembly comprising: a support substrate 2 with an upper surface 4 and one or more electrically conductive refractory guards 6 disposed over the upper surface 4 of the support substrate 2, extending to a height hg above the upper surface 4 of the support substrate 2; and one or more non-refractory and/or non-planar substrates 8 disposed over the upper surface 4 of the support substrate 2, wherein the height hs above the upper surface 4 of the support substrate 2, where the height hs and where the difference in height hg hs lies in the range of 0.2-10mm. The composite substrate assembly is located within a plasma chamber of the microwave plasma CVD reactor (Figure 5). The process gases are fed into the plasma chamber with microwave plasma where plasma is formed at a location over the composite substrate assembly thus growing synthetic diamond on the one or more non-refractory and/or non-planar substrates.

    Abstract translation: 描述了使用微波等离子体化学气相沉积(MWCVD)合成技术用合成金刚石材料涂覆非耐火和/或非平面基板2的方法。 该方法详细地形成复合衬底组件,其包括:具有上表面4的支撑衬底2和设置在支撑衬底2的上表面4上方的一个或多个导电耐火护板6,延伸到上表面4上方的高度hg 的支撑基板2; 以及设置在支撑基板2的上表面4上方的一个或多个非耐火和/或非平面基板8,其中在支撑基板2的上表面4上方的高度hs,其中高度hs和差异 在高度hg hs在0.2-10mm的范围内。 复合衬底组件位于微波等离子体CVD反应器的等离子体室内(图5)。 工艺气体用微波等离子体送入等离子体室,等离子体形成在复合衬底组件上方的一个位置上,从而在一个或多个非耐火和/或非平面衬底上生长合成金刚石。

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