METHOD FOR MAKING DIAMOND LAYERS BY CVD
    1.
    发明申请
    METHOD FOR MAKING DIAMOND LAYERS BY CVD 审中-公开
    通过CVD制备金刚石层的方法

    公开(公告)号:WO2014090664A1

    公开(公告)日:2014-06-19

    申请号:PCT/EP2013/075576

    申请日:2013-12-04

    Abstract: A method of coating a non-refractory and/or non-planar substrate (8) with synthetic diamond material using a microwave plasma chemical vapour deposition (CVD) synthesis technique, the method comprising: • forming a composite substrate assembly (1) comprising: • a support substrate (2) comprising an upper surface; • one or more electrically conductive refractory guards (6) disposed over the upper surface of the support substrate and extending to a height h g above the upper surface of the support substrate; and one or more non-refractory and/or non-planar substrates disposed over the upper surface of the support substrate and extending to a height h s above the upper surface of the support substrate, wherein the height h s is less than the height h g , wherein a difference in height h g - h s lies in a range 0.2 mm to 10 mm; • placing the composite substrate assembly within a plasma chamber of a microwave plasma CVD reactor; • feeding process gases into the plasma chamber including a carbon containing gas and a hydrogen containing gas; • feeding microwaves in the plasma chamber to form a microwave plasma at a location over the composite substrate assembly; and • growing synthetic diamond material on the one or more non-refractory and/or non-planar substrates.

    Abstract translation: 一种使用微波等离子体化学气相沉积(CVD)合成技术用合成金刚石材料涂覆非耐火和/或非平面基底(8)的方法,所述方法包括:•形成复合衬底组件(1),包括: •支撑衬底(2),包括上表面; •一个或多个导电耐火材料保护件(6),其布置在所述支撑基板的上表面上方并延伸到所述支撑基板的上表面上方的高度hg; 以及一个或多个非耐火和/或非平面基底,其设置在支撑基板的上表面上方并且延伸到支撑基板的上表面上方的高度h s,其中高度h s小于高度hg,其中 高度差hg-hs在0.2mm至10mm的范围内; •将复合衬底组件放置在微波等离子体CVD反应器的等离子体室内; •将工艺气体进料到等离子体室中,包括含碳气体和含氢气体; •在等离子体室中馈送微波以在复合衬底组件上的位置形成微波等离子体; 以及•在所述一个或多个非耐火材料和/或非平面基材上生长合成金刚石材料。

    MICROWAVE GENERATORS AND MANUFACTURE OF SYNTHETIC DIAMOND MATERIAL
    2.
    发明申请
    MICROWAVE GENERATORS AND MANUFACTURE OF SYNTHETIC DIAMOND MATERIAL 审中-公开
    微波发生器和合成金刚石材料的制造

    公开(公告)号:WO2017032733A1

    公开(公告)日:2017-03-02

    申请号:PCT/EP2016/069785

    申请日:2016-08-22

    Abstract: A microwave generator system for use in a microwave plasma enhanced chemical vapour deposition (MPECVD) system,the microwave generator system comprising: a microwave generator unit configured to produce microwaves at an operating power output suitable for fabricating synthetic diamond material via a chemical vapour deposition process; a fault detection system configured to detect a fault in the microwave generator unit which results in a reduction in the operating power output or a change in frequency; and a re-start system configured to restart the microwave generator unit in response to a fault being detected and recover the operating power output or frequency in a time period of less than 10 seconds after the fault in the microwave generator unit which caused the reduction in the operating power output or the change in frequency.

    Abstract translation: 一种用于微波等离子体增强化学气相沉积(MPECVD)系统的微波发生器系统,所述微波发生器系统包括:微波发生器单元,其被配置为产生适于通过化学气相沉积工艺制造合成金刚石材料的工作功率输出的微波 ; 故障检测系统,被配置为检测所述微波发生器单元中的故障,其导致所述操作功率输出的减小或频率的变化; 以及重新启动系统,其被配置为响应于检测到的故障重新启动微波发生器单元,并且在微波发生器单元中的导致所述微波发生器单元的故障之后的小于10秒的时间段内恢复所述工作功率输出或频率 工作功率输出或频率变化。

    METHOD FOR MAKING DIAMOND LAYERS BY CVD

    公开(公告)号:EP2931935B1

    公开(公告)日:2018-10-24

    申请号:EP13799087.5

    申请日:2013-12-04

    Abstract: A method of coating a non-refractory and/or non-planar substrate 2 with synthetic diamond material using a microwave plasma chemical vapour deposition (MWCVD) synthesis technique is described. The method details forming a composite substrate assembly comprising: a support substrate 2 with an upper surface 4 and one or more electrically conductive refractory guards 6 disposed over the upper surface 4 of the support substrate 2, extending to a height hg above the upper surface 4 of the support substrate 2; and one or more non-refractory and/or non-planar substrates 8 disposed over the upper surface 4 of the support substrate 2, wherein the height hs above the upper surface 4 of the support substrate 2, where the height hs and where the difference in height hg hs lies in the range of 0.2-10mm. The composite substrate assembly is located within a plasma chamber of the microwave plasma CVD reactor (Figure 5). The process gases are fed into the plasma chamber with microwave plasma where plasma is formed at a location over the composite substrate assembly thus growing synthetic diamond on the one or more non-refractory and/or non-planar substrates.

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