公开(公告)号：JP2013254081A

公开(公告)日：2013-12-19

申请号：JP2012129362

申请日：2012-06-06

Applicant: FUJIFILM CORP

Inventor： TSUCHIMURA TOMOTAKA ,  TSURUTA TAKUYA

IPC: G03F7/038 ,  C08F8/00 ,  C08F8/50 ,  C08F212/14 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a chemically amplified resist composition, from which a pattern can be formed that satisfies simultaneously demands for high sensitivity, high resolution (for example, high resolving power, superior pattern features and low line edge roughness (LER)), reduction of scum, improvement in dry etching durability, reduction of dependency on PEB temperature and improvement in PED stability in the formation of a fine pattern by exposure using electron beams or extreme UV rays, and to provide a resist film, a mask blank and a method for forming a resist pattern using the resist composition.SOLUTION: The chemically amplified resist composition comprises a compound (α) having a structural part (a) that is decomposed by irradiation with actinic rays or radiation to generate an acid, a phenolic hydroxyl group and an acid-crosslinking group.

公开(公告)号：JP2013205520A

公开(公告)日：2013-10-07

申请号：JP2012072540

申请日：2012-03-27

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TSUCHIMURA TOMOTAKA ,  TSURUTA TAKUYA ,  INAZAKI TAKESHI

IPC: G03F7/004 ,  C07C309/73 ,  C07C309/77 ,  C08F12/24 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a chemically amplified resist composition, from which a pattern can be formed having high sensitivity, high resolution (for example, high resolving power, an excellent pattern profile and small line edge roughness (LER)), high stability with time, little production of scum and good dry etching durability, in particular, a chemically amplified resist composition, which shows a good balance between sensitivity and stability with time owing to an ester group included in an acid multiplication agent expressed by general formula (I), and which is excellent in improving sensitivity by generating a carboxylic acid when the acid multiplication agent is decomposed by an acid, and to provide a resist film, a resist coated mask blank, a method for forming a resist pattern and a photomask using the above composition.SOLUTION: The chemically amplified resist composition comprises (A) a compound expressed by general formula (I) and (B) a compound that generates an acid by irradiation with actinic rays or radiation. In general formula (I), Rto Reach represent a hydrogen atom or a substituent, and two or more in Rto Rmay be bonded to form a ring; Rrepresents a substituent; and A represents a monovalent organic group.

Abstract translation: 要解决的问题：提供一种化学放大型抗蚀剂组合物，可以形成具有高灵敏度，高分辨率（例如高分辨率，优异的图案轮廓和小线边缘粗糙度（LER））的图案，高稳定性 随着时间的流逝，少量的浮渣和良好的干蚀刻耐久性，特别是化学放大型抗蚀剂组合物，由通式（I）表示的酸增殖剂中所含的酯基显示了灵敏度与时间的稳定性之间的良好平衡 ），并且当酸增殖剂被酸分解时，通过产生羧酸提高灵敏度，并且提供抗蚀剂膜，抗蚀剂涂布的掩模板，用于形成抗蚀剂图案的方法和使用 化学放大抗蚀剂组合物包含（A）由通式（I）表示的化合物和（B）产生交联的化合物 id通过光化射线或辐射照射。 在通式（I）中，Rto Reach表示氢原子或取代基，Rto Rmay中的两个或多个键合形成环; R代表取代基; A表示一价有机基团。

公开(公告)号：JP2013182191A

公开(公告)日：2013-09-12

申请号：JP2012046854

申请日：2012-03-02

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： INAZAKI TAKESHI ,  TSUCHIMURA TOMOTAKA ,  TSURUTA TAKUYA ,  TAKAHASHI KOTARO

IPC: G03F7/004 ,  C07C309/71 ,  C07C309/73 ,  C07C309/77 ,  C07D217/08 ,  C07D317/24 ,  C08F8/12 ,  C08F20/20 ,  C08F112/14 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide: a chemically amplified positive resist composition which can satisfy high sensitivity, high resolving power, a preferable pattern cross-sectional shape and a preferable roughness property in forming an isolated line pattern; and a resist film, a resist coated mask blank, a resist pattern formation method, and a photomask which use the composition.SOLUTION: Provided is a chemically amplified positive resist composition containing: (A) a compound represented by the specified general formula (1); and (B) a compound having a phenolic hydroxyl group and a group which has a group represented by the specified general formula (2) or (3) substituted for a hydrogen atom of a phenolic hydroxyl group. Also provided are a resist film, a resist coated mask blank, a resist pattern formation method, and a photomask which use the composition. In the specified general formula (1), Z represents a monovalent organic group. In the specified general formulas (2) and (3), Qand Qrepresent an alkyl group or an aryl group.

Abstract translation: 要解决的问题：提供：在形成隔离线图案时，能够满足高灵敏度，高分辨能力，优选的图案截面形状和优选的粗糙度特性的化学放大型正性抗蚀剂组合物; 以及使用该组合物的抗蚀剂膜，抗蚀剂涂布掩模板，抗蚀剂图案形成方法和光掩模。解决方案：提供一种化学放大正型抗蚀剂组合物，其包含：（A）由特定通式（1）表示的化合物 ）; 和（B）具有酚羟基的化合物和具有由通式（2）或（3）表示的基团取代酚羟基的氢原子的基团。 还提供了使用该组合物的抗蚀剂膜，抗蚀剂涂布的掩模坯料，抗蚀剂图案形成方法和光掩模。 在通式（1）中，Z表示一价有机基团。 在指定的通式（2）和（3）中，Q和Q表示烷基或芳基。

公开(公告)号：JP2013160947A

公开(公告)日：2013-08-19

申请号：JP2012023386

申请日：2012-02-06

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TAKIZAWA HIROO ,  TSUCHIMURA TOMOTAKA ,  KAWABATA KENJI ,  TSURUTA TAKUYA

IPC: G03F7/004 ,  C08F212/14 ,  C08F220/26 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0388 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2002 ,  G03F7/325

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method, an actinic ray-sensitive or radiation-sensitive resin composition and a resist film, showing high sensitivity, high resolution and excellent line width roughness (LWR) in microprocessing such as formation of a fine pattern in a semiconductor element, particularly, in forming a negative type pattern by organic solvent development, and to provide a method for manufacturing an electronic device and an electronic device using the above method and the composition.SOLUTION: The pattern forming method includes: a step (1) of forming a film by using the following actinic ray-sensitive or radiation-sensitive resin composition; a step (2) of exposing the film by using actinic rays or radiation; and a step (4) of developing the film after exposure by using a developing solution containing an organic solvent to form a negative type pattern. The resin composition comprises: (A) a resin including an acid decomposable repeating unit and showing decrease in the solubility with a developing solution including an organic solvent by an action of an acid; (B) a compound that generates an acid by irradiation with actinic rays or radiation; (C) a compound that is decomposed by an action of an acid to generate an acid; and (D) a solvent. The present invention also discloses an actinic ray-sensitive or radiation-sensitive resin composition to be used for the above pattern forming method, a resist film formed by using the composition, and a method for manufacturing an electronic device and an electronic device using the above pattern forming method.

Abstract translation: 要解决的问题：为了提供图案形成方法，光化学敏感或辐射敏感性树脂组合物和抗蚀剂膜，在微加工如精细化处理中显示出高灵敏度，高分辨率和优异的线宽粗糙度（LWR） 特别是通过有机溶剂显影形成负型图案，并提供使用上述方法和组合物制造电子器件和电子器件的方法。解决方案：图案形成方法包括： 通过使用以下光化射线敏感或辐射敏感性树脂组合物形成膜的步骤（1）; 通过使用光化射线或辐射使膜曝光的步骤（2）; 以及通过使用含有有机溶剂的显影液形成负型图案而使曝光后的膜显影的工序（4）。 该树脂组合物包含：（A）包含酸可分解重复单元的树脂，并且通过酸的作用显示与包含有机溶剂的显影溶液的溶解度降低; （B）通过用光化射线或辐射照射产生酸的化合物; （C）通过酸的作用而分解产生酸的化合物; 和（D）溶剂。 本发明还公开了用于上述图案形成方法的光化射线敏感或辐射敏感性树脂组合物，使用该组合物形成的抗蚀剂膜，以及使用上述方法制造电子器件和电子器件的方法 图案形成方法。