PATTERN FORMING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD

    公开(公告)号:US20180120705A1

    公开(公告)日:2018-05-03

    申请号:US15853973

    申请日:2017-12-26

    Abstract: Provided are a positive tone pattern forming method in which development is carried out using a developer containing an organic solvent with use of a composition containing (A) a resin which has a repeating unit containing a moiety capable of forming a polar interaction and whose polarity is decreased due to release of the polar interaction by the action of an acid or a base, or a composition containing (A′) a resin having a repeating unit containing a polar group and (B) a compound capable of forming a polar interaction with the polar group of the resin (A′); and an electronic device manufacturing method including such a pattern forming method.

    PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE
    14.
    发明申请
    PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE 有权
    图案形成方法,电子束敏感或极端超紫外线辐射敏感性树脂组合物,电阻膜,使用其和电子器件的电子器件的制造方法

    公开(公告)号:US20140212811A1

    公开(公告)日:2014-07-31

    申请号:US14228894

    申请日:2014-03-28

    Abstract: A pattern-forming method includes in this order: step (1) of forming a film with an electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition that contains (A) a resin having an acid-decomposable repeating unit and capable of decreasing a solubility of the resin (A) in a developer containing an organic solvent by an action of an acid, (B) a compound capable of generating an acid upon irradiation with an electron beam or extreme ultraviolet radiation, (C) a resin having one or more groups selected from the specific group as defined in the specification and (D) a solvent; step (2) of exposing the film with an electron beam or extreme ultraviolet radiation; and step (4) of developing the film with a developer containing an organic solvent after the exposing to form a negative pattern.

    Abstract translation: 图案形成方法包括以下顺序:用电子束敏感或极紫外线辐射敏感性树脂组合物形成膜的步骤(1),其包含(A)具有酸分解重复单元并能够降低的树脂 树脂(A)在含有有机溶剂的显影剂中的溶解度,(B)在电子束或极紫外线照射时能够产生酸的化合物,(C)具有一个 或更多选自本说明书中定义的特定基团的基团和(D)溶剂; 步骤(2),用电子束或极紫外线辐射曝光胶片; 以及在暴露之后用含有机溶剂的显影剂显影该膜以形成负图案的步骤(4)。

    PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE
    15.
    发明申请
    PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE 有权
    图案形成方法,电子束敏感或极端超紫外线辐射敏感性树脂组合物,电阻膜,使用其和电子器件的电子器件的制造方法

    公开(公告)号:US20140193749A1

    公开(公告)日:2014-07-10

    申请号:US14207867

    申请日:2014-03-13

    Abstract: A pattern-forming method includes in this order: step (1) of forming a film with an electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition that contains (A) a resin having an acid-decomposable repeating unit and capable of decreasing a solubility of the resin (A) in a developer containing an organic solvent by an action of an acid, (B) a compound capable of generating an acid upon irradiation with an electron beam or extreme ultraviolet radiation and (C) a solvent; step (2) of exposing the film with an electron beam or extreme ultraviolet radiation; and step (4) of forming a negative pattern by development of the film with a developer containing an organic solvent after the exposing of the film, wherein a content of the compound (B) is 21% by mass to 70% by mass on the basis of all solids content of the composition.

    Abstract translation: 图案形成方法包括以下顺序:用电子束敏感或极紫外线辐射敏感性树脂组合物形成膜的步骤(1),其包含(A)具有酸分解重复单元并能够降低的树脂 (A)在含有有机溶剂的显影剂中的溶解度,(B)在电子束或极紫外线照射下能够产生酸的化合物和(C)溶剂; 步骤(2),用电子束或极紫外线辐射曝光胶片; 和步骤(4),通过在所述膜暴露之后用含有机溶剂的显影剂显影所述膜形成负图案,其中化合物(B)的含量为21质量%至70质量% 组合物的所有固体含量的基础。

    METHOD OF FORMING PATTERNS
    16.
    发明申请
    METHOD OF FORMING PATTERNS 有权
    形成图案的方法

    公开(公告)号:US20140057209A1

    公开(公告)日:2014-02-27

    申请号:US14074156

    申请日:2013-11-07

    Inventor: Hideaki TSUBAKI

    CPC classification number: G03F7/2041 G03F7/0392 G03F7/325

    Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film having a receding contact angle of 70 degrees or above with respect to water, wherein the resist composition for negative development contains a resin capable of increasing the polarity by the action of an acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) exposing the resist film via an immersion medium, and (c) performing development with a negative developer.

    Abstract translation: 一种形成图案的方法包括(a)用负显影用抗蚀剂组合物涂布基材以形成相对于水的后退接触角为70度或更高的抗蚀剂膜,其中用于负显影的抗蚀剂组合物含有能够 通过酸的作用增加极性,并且在通过光化射线或辐射照射时变得更可溶于正极显影剂并且在阴极显影剂中较少溶解,(b)通过浸渍介质曝光抗蚀剂膜,和(c) 用负面的开发人员进行开发。

    COATING COMPOSITION, ANTIREFLECTION FILM, MANUFACTURING METHOD THEREFOR, LAMINATE, AND SOLAR CELL MODULE

    公开(公告)号:US20190334037A1

    公开(公告)日:2019-10-31

    申请号:US16507036

    申请日:2019-07-10

    Abstract: Provided are a coating composition including polymer particles having a number-average primary particle diameter of 30 nm to 200 nm, a siloxane resin which has a weight-average molecular weight of 600 to 6,000, is a siloxane resin including at least one unit selected from units (1), (2), and (3) described below, and has a total mass of the units (1), (2), and (3) being 95% by mass or more of a total mass of the siloxane resin, and a solvent and applications thereof. R1's each independently represent an alkyl group having 1 to 8 carbon atoms or an alkyl fluoride group having 1 to 8 carbon atoms, R2's each independently represent a hydrogen atom or an alkyl group having 1 to 8 carbon atoms, and, in a case where both the units (1) and (2) are included, the alkyl groups having 1 to 8 carbon atoms represented by R1's or R2's may be identical to or different from each other.Unit (1): R1—Si(OR2)2O1/2 unitUnit (2): R1—Si(OR2)O2/2 unitUnit (3): R1—Si—O3/2 unit

    PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE

    公开(公告)号:US20180181003A1

    公开(公告)日:2018-06-28

    申请号:US15904438

    申请日:2018-02-26

    Abstract: The pattern forming method includes forming an actinic ray-sensitive or radiation-sensitive film using an actinic ray-sensitive or radiation-sensitive composition, forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film using a composition for forming an upper layer film, exposing the actinic ray-sensitive or radiation-sensitive film having the upper layer film formed thereon, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer, in which the composition for forming an upper layer film includes a solvent and a crosslinking agent; and in which the content of a solvent having a hydroxyl group is 80% by mass or less with respect to all the solvents included in the composition for forming an upper layer film. The method for manufacturing an electronic device includes the pattern forming method. The laminate has an actinic ray-sensitive or radiation-sensitive film, and an upper layer film including a crosslinking agent.

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