公开(公告)号：US20240053679A1

公开(公告)日：2024-02-15

申请号：US18362376

申请日：2023-07-31

Applicant: FUJIFILM Corporation

Inventor： Takamitsu TOMIGA ,  Sou KAMIMURA ,  Yoichi NISHIDA ,  Hideaki TSUBAKI

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/039 ,  G03F7/0045 ,  G03F7/0048 ,  G03F7/2006

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition including a resin (A) undergoing an increase in alkali solubility due to action of acid; a compound (C) generating acid upon irradiation with an actinic ray or radiation; and a solvent (S) including a solvent SA having a boiling point of 130° C. to 150° C. and a solvent SB having a boiling point of 155° C. to 250° C., in which a content of the solvent SA is higher than a content of the solvent SB, the content of the solvent SB relative to the whole solvent is 1% to 30% by mass, and a concentration of solid contents is 10% by mass or more.

公开(公告)号：US20180017872A1

公开(公告)日：2018-01-18

申请号：US15718659

申请日：2017-09-28

Applicant: FUJIFILM Corporation

Inventor： Wataru NIHASHI ,  Hideaki TSUBAKI ,  Toru TSUCHIHASHI ,  Tomotaka TSUCHIMURA

IPC: G03F7/32 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20

CPC classification number: G03F7/325 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2004

Abstract: Provide are a pattern forming method including a step (1) of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition including a resin having an acid-decomposable repeating unit capable of decomposing by the action of an acid to generate an acid having a pKa of 3.0 or less, a step (2) of exposing the film using actinic rays or radiation, and a step (3) of carrying out development using a developer including an organic solvent after the exposure to form a negative tone pattern; and a method for manufacturing an electronic device, including the pattern forming method.

公开(公告)号：US20150284492A1

公开(公告)日：2015-10-08

申请号：US14744963

申请日：2015-06-19

Applicant: FUJIFILM CORPORATION

Inventor： Natsumi YOKOKAWA ,  Hiroo TAKIZAWA ,  Hideaki TSUBAKI

IPC: C08F216/10 ,  G03F7/038

CPC classification number: G03F7/0392 ,  C08F8/02 ,  C08F8/12 ,  C08F8/14 ,  C08F8/34 ,  C08F8/36 ,  C08F12/20 ,  C08F12/24 ,  C08F12/30 ,  C08F212/14 ,  C08F212/32 ,  C08F216/10 ,  C08F216/38 ,  C08F220/18 ,  C08F220/20 ,  C08F220/30 ,  C08F232/08 ,  C08F2800/10 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/30 ,  G03F7/322 ,  C08F112/14 ,  C08F120/20 ,  C08F2220/283 ,  C08F2220/382 ,  C08F2220/305 ,  C08F2220/301

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (P) having a repeating unit represented by the following Formula (A) and having at least two of a repeating unit represented by the following Formula (B), a repeating unit represented by the following Formula (C), a repeating unit represented by the following Formula (D) and a repeating unit represented by the following Formula (E).

Abstract translation: 提供了含有具有由下式（A）表示的重复单元并具有下述式（B）表示的重复单元中的至少2种的树脂（P）的光化射线敏感性或辐射敏感性树脂组合物， 由下式（C）表示的重复单元，由下式（D）表示的重复单元和由下式（E）表示的重复单元。

公开(公告)号：US20150185612A1

公开(公告)日：2015-07-02

申请号：US14656997

申请日：2015-03-13

Applicant: FUJIFILM CORPORATION

Inventor： Takeshi KAWABATA ,  Hideaki TSUBAKI ,  Hiroo TAKIZAWA

IPC: G03F7/038 ,  G03F7/30 ,  G03F7/20 ,  C08F8/32

CPC classification number: G03F7/0388 ,  C08F8/32 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2002 ,  G03F7/2037 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/32 ,  G03F7/325

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin having a repeating unit represented by the specific formula and a group capable of decomposing by an action of an acid to produce a polar group; and an ionic compound represented by the specific formula, and a resist film comprising the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract translation: 提供了光化射线敏感或辐射敏感性树脂组合物，其包含：（A）具有由特定式表示的重复单元的树脂和能够通过酸的作用分解以产生极性基团的基团; 和由该具体式表示的离子化合物，以及包含光化射线敏感或辐射敏感性树脂组合物的抗蚀剂膜。

公开(公告)号：US20150118628A1

公开(公告)日：2015-04-30

申请号：US14581484

申请日：2014-12-23

Applicant: FUJIFILM Corporation

Inventor： Takeshi KAWABATA ,  Hideaki TSUBAKI ,  Hiroo TAKIZAWA ,  Natsumi YOKOKAWA

IPC: G03F7/20 ,  C08F28/02 ,  C08F14/18

CPC classification number: G03F7/20 ,  C08F14/185 ,  C08F28/02 ,  G03F7/0017 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/325

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (P) comprising any of repeating units (A) of general formula (I) below, each of which contains an ionic structural moiety that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid in a side chain of the resin.

Abstract translation: 本发明提供一种光化学射线或辐射敏感性树脂组合物，其包含包含以下通式（I）的重复单元（A）的树脂（P），其中每一种都含有当暴露于光化射线时的离子结构部分 辐射被分解，从而在树脂的侧链中产生酸。

公开(公告)号：US20150086912A1

公开(公告)日：2015-03-26

申请号：US14554344

申请日：2014-11-26

Applicant: FUJIFILM CORPORATION

Inventor： Takeshi KAWABATA ,  Hideaki TSUBAKI ,  Hiroo TAKIZAWA ,  Natsumi YOKOKAWA

IPC: G03F7/038 ,  C08F216/10 ,  C08F220/30 ,  C08F216/14

CPC classification number: G03F7/0388 ,  C08F12/20 ,  C08F12/22 ,  C08F12/30 ,  C08F212/14 ,  C08F212/32 ,  C08F216/10 ,  C08F216/14 ,  C08F216/1416 ,  C08F220/30 ,  C08F2220/301 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/325

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit (A) represented by the specific formula (I) capable of generating an acid on the side chain of the resin upon irradiation with an actinic ray or radiation, and a resist film formed with the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising: exposing the resist film, and developing the exposed resist film, and a method for manufacturing a semiconductor device, containing the pattern forming method, and a semiconductor device manufactured by the manufacturing method of the semiconductor device.

Abstract translation: 提供了一种光化射线敏感性或辐射敏感性树脂组合物，其包含（P）具有在具有式（I）表示的重复单元（A）的树脂中，所述重复单元（A）能够在照射时在树脂的侧链上产生酸 光化射线或辐射，以及形成有光化射线敏感或辐射敏感性树脂组合物的抗蚀剂膜，以及图案形成方法，包括：使抗蚀剂膜曝光并显影曝光的抗蚀剂膜，以及半导体制造方法 包含图案形成方法的器件，以及通过半导体器件的制造方法制造的半导体器件。

公开(公告)号：US20150044616A1

公开(公告)日：2015-02-12

申请号：US14521622

申请日：2014-10-23

Applicant: FUJIFILM Corporation

Inventor： Hideaki TSUBAKI

IPC: G03F7/20

CPC classification number: C09D127/12 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  H01L21/0274 ,  H01L21/0275

Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.

公开(公告)号：US20140295332A1

公开(公告)日：2014-10-02

申请号：US14303090

申请日：2014-06-12

Applicant: FUJIFILM Corporation

Inventor： Shuji HIRANO ,  Hiroo TAKIZAWA ,  Hideaki TSUBAKI

IPC: G03F7/038

CPC classification number: G03F7/0388 ,  C07C313/06 ,  C07C313/24 ,  C07D233/06 ,  C07D233/56 ,  C07D235/22 ,  C07D267/00 ,  C07D295/22 ,  C07D401/12 ,  C08F12/20 ,  C08F12/22 ,  C08F12/30 ,  C08F212/14 ,  C08F220/10 ,  C08F220/18 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325 ,  C08F2220/1825

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition, which is excellent in sensitivity, resolution, a pattern profile and a depth of focus (DOF), and, an actinic ray-sensitive or radiation-sensitive film and a pattern forming method, each using the same, are provided. The actinic ray-sensitive or radiation-sensitive resin composition includes a nitrogen-containing compound and a resin (Ab) capable of varying a polarity or an alkali solubility thereof by the action of an acid.

Abstract translation: 灵敏度，分辨率，图案轮廓和焦深（DOF）优异的光化射线敏感或辐射敏感性树脂组合物，以及光化射线敏感或辐射敏感膜和图案形成方法， 每个使用相同的。 光化射线敏感或辐射敏感性树脂组合物包括含氮化合物和能够通过酸的作用改变其极性或碱溶性的树脂（Ab）。

公开(公告)号：US20210200097A1

公开(公告)日：2021-07-01

申请号：US17178218

申请日：2021-02-17

Applicant: FUJIFILM Corporation

Inventor： Hideaki TSUBAKI ,  Toru TSUCHIHASHI ,  Wataru NIHASHI ,  Kei YAMAMOTO

IPC: G03F7/32 ,  G03F7/075 ,  G03F7/095 ,  G03F7/039 ,  G03F7/004 ,  G03F7/11 ,  G03F7/038 ,  H01L21/304 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40

Abstract: An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern.
The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having an SP value of 16.3 MPa1/2 or less and a second organic solvent having an SP value of 17.1 MPa1/2 or more.

公开(公告)号：US20180364569A1

公开(公告)日：2018-12-20

申请号：US16109868

申请日：2018-08-23

Applicant: FUJIFILM Corporation

Inventor： Wataru NIHASHI ,  Hideaki TSUBAKI

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32

Abstract: An actinic ray-sensitive or radiation-sensitive composition, and an actinic ray-sensitive or radiation-sensitive composition obtained by the method for producing an actinic ray-sensitive or radiation-sensitive composition each contain a cation having a metal atom, and a ligand, in which a value of σ represented by Equation (1) is 2.2 or less. A pattern forming method and the method for manufacturing an electronic device each use the actinic ray-sensitive or radiation-sensitive composition. σ = ∑ k = 1 N  { ( μ - X k ) 2 × y k } ( 1 )