公开(公告)号：JPH01187946A

公开(公告)日：1989-07-27

申请号：JP1313788

申请日：1988-01-22

Applicant: FUJITSU LTD ,  KYUSHU FUJITSU ELECTRONIC

Inventor： SASAKA MASAAKI

IPC: H01L21/3205 ,  H01L21/31 ,  H01L21/768 ,  H01L23/522

Abstract: PURPOSE:To obtain a method of forming a multilayer interconnection flattening the surface on which an upper-layer wiring is formed, and to improve yield on manufacture and reliability of a semiconductor device, by depositing a second insulating film of silicon nitride onto an insulating film, on which a stepped section is formed, by vapor growth through an electron cyclotron resonance plasma and etching the stepped section. CONSTITUTION:When multilayer interconnection structure is formed, an silicon nitride group second insulating film 10 is deposited onto an silicon oxide group first insulating film 8, which is applied onto the surface, to which lower layer wirings 5A, 5B are shaped, and to the surface of which stepped sections 9 by the lower layer wirings 5A, 5B are formed, through vapor growth by electron cyclotron resonance plasma. Silicon nitride films 10a on the side faces of the stepped sections 9 in the first insulating film 8 and the first insulating film 8 on the lower layer wirings 5A, 5B are removed through etching by a hydrofluoric acid etchant while the second insulating film 10 in the upper sections of the lower layer wirings 5A, 5B is lifted off to expose the lower layer wirings 5A, 5B, a third insulating film 11 is shaped onto the exposed surfaces of the lower layer wirings 5A, 5B, and a wiring 13 as an upper layer is formed onto the third insulating film 11.

公开(公告)号：JP2003217444A

公开(公告)日：2003-07-31

申请号：JP2002382160

申请日：2002-12-27

Applicant: FUJITSU LTD

Inventor： AMATSU MASASHI ,  KANAGU SHINJI ,  SASAKA MASAAKI ,  AWAJI NORIYUKI ,  EBIHARA KAZUMI

IPC: H01J9/26 ,  H01J9/02 ,  H01J11/12 ,  H01J11/22 ,  H01J11/24 ,  H01J11/26 ,  H01J11/34 ,  H01J11/38 ,  H01J11/46 ,  H01J11/48 ,  H01J11/02

Abstract: PROBLEM TO BE SOLVED: To improve the reliability of a display by preventing the deterioration in a transparent conductive film constituting display electrodes. SOLUTION: This method comprises a steps of forming a plurality of display electrodes X, Y on a substrate forming a discharge space in manufacturing an AC type PDP 1 having the display electrodes X, Y and a dielectric layer 17A for covering the display electrodes X, Y, a step of forming the dielectric layer 17A to cover the display electrodes X, Y all over their lengths with a ZnO based glass material substantially not containing lead, a step of bonding the substrate to another substrate in the state of being opposed with the heating fusion of a sealing material 31 after providing the sealing material 31 on at least one of them for sealing the discharge space, and a step of exposing the display electrodes X, Y at their ends by removing a portion of the dielectric layer 17A extending to the outside of the panel beyond a substrate bonding area. COPYRIGHT: (C)2003,JPO

公开(公告)号：JPH11268233A

公开(公告)日：1999-10-05

申请号：JP6980398

申请日：1998-03-19

Applicant: FUJITSU LTD

Inventor： SASAKA MASAAKI ,  MURAKAMI KOICHI

IPC: B41F15/08 ,  B41F15/36 ,  H05K3/12

Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus for screen printing which enable accurate printing of paste even when a large-sized screen mask is used. SOLUTION: In a method for screen printing wherein paste is printed on the surface of a printing matter 7 by using a screen mask composed of a screen having an opening part corresponding to a printing pattern and of a rectangular frame body retaining the screen, registration of this screen mask with the printing matter 7 is executed by bringing only a corner part of two sides of the frame body adjacent to each other into contact with blocks 3 and 3' for positioning, and the paste is printed on the surface of the printing matter through the intermediary of the screen of the screen mask positioned.

公开(公告)号：JPH03149862A

公开(公告)日：1991-06-26

申请号：JP28911489

申请日：1989-11-07

Applicant: FUJITSU LTD ,  KYUSHU FUJITSU ELECTRONIC

Inventor： SASAKA MASAAKI

IPC: H01L23/14 ,  H01L23/29 ,  H01L23/31 ,  H01L23/50

Abstract: PURPOSE:To obtain a highly moisture-resistant device not damaged by water absorbed by mold resin even after heating such as solder packaging by coating the rear of a die pad with a silicon semiconductor or a metallic film. CONSTITUTION:The present invention comprises a die pad 2, a silicon IC chip 6 mounted on the surface thereof, bonding pads 7 formed on the surface of the chip 6, leads 3 connected with bonding wires 8, a silicon semiconductor or metallic film 5 to coat the rear of the die pad 2, and mold resin 9 to mold the IC chip 6, the die pad 2, the silicon semiconductor or metallic film 5, the bonding wires 8, and part of the leads 3. For example, the silicon semiconductor or metallic film 5 is made of one or more of polycrystalline silicon, amorphous silicon, tungsten silicide, molybdenum silicide, and titanium silicide.

公开(公告)号：JPH01265541A

公开(公告)日：1989-10-23

申请号：JP9384088

申请日：1988-04-15

Applicant: FUJITSU LTD ,  KYUSHU FUJITSU ELECTRONIC

Inventor： SASAKA MASAAKI

IPC: H01L21/3205 ,  H01L21/28 ,  H01L21/336 ,  H01L23/52 ,  H01L29/43 ,  H01L29/78

Abstract: PURPOSE:To decrease an increase in pinholes, an augmentation in a wiring resistance and the disconnection of wirings by a method wherein a semiconductor device is provided with an electrode wiring consisting of a three-layer structure, in which a conducting film other than doped polySi films is interposed between the doped polySi films. CONSTITUTION:A gate electrode wiring 15, a bit wiring 16, a lower wiring 17 of a capacitor and an upper wiring 18 of the capacitor are all constituted of 3 layers of a doped polySi film 11, a titanium nitride film 12 and a doped polySi film 13. The crystal growth of the film 11 is interrupted owing to the existence of the film 12, which is an intermediate layer, and crystal grains become small. Even if the growth is somewhat grown by heat treatment, the growth is not brought in a state that the crystal grains are arranged in a row. Accordingly, pinholes to dividing the film thicknesses of the wirings are not generated and an increase in a wiring resistance and the disconnection of the wirings are decreased.

公开(公告)号：JPH11167861A

公开(公告)日：1999-06-22

申请号：JP33422597

申请日：1997-12-04

Applicant: FUJITSU LTD

Inventor： SASAKA MASAAKI

IPC: H01J9/02

Abstract: PROBLEM TO BE SOLVED: To heighten the quality of display by highly precisely forming a dielectric layer in a highly fine PDP(plasma display panel) with a large surface area and high brightness. SOLUTION: A dielectric paste 3 containing a plurality of solid particles 4 of a dielectric material with particle diameter smaller than the thickness of a dielectric layer 7 and a liquid substance 5 is applied to a substrate provided with display electrodes 2 as to cover the display electrodes 2, the liquid substance 5 contained in the dielectric paste 3 is burnt out by firing treatment and only the surface areas of the solid particles 4 are melted to stick a plurality of the solid particles themselves and to form a dielectric layer 7 with a stone wall-like structure comprising the solid particles stuck one another and arranged in rows. Consequently, since the surface of the dielectric layer 7 is made free of projection and flat and the face of each solid particle is made small, void and pin hole formation is suppressed. As a result, abnormal electric discharge due to local electric field intensity decrease can be prevented and excellent display property can be obtained.

公开(公告)号：JPH05198566A

公开(公告)日：1993-08-06

申请号：JP710392

申请日：1992-01-20

Applicant: FUJITSU LTD

Inventor： SASAKA MASAAKI

IPC: C23C16/24 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PURPOSE:To prevent the deposition of silicide particles on a substrate surface caused by combination of the refractory metal of wiring with silicon in a source gas during CVD on the substrate, when forming a silicon oxide film by CVD on a substrate with wiring wade of refractory metal or its silicide. CONSTITUTION:SiH4 as a source gas for silicon and N2O as a source gas for oxygen are supplied at such a flow rate that the resulting silicon oxide film has a refractive index of 1.440-1.447. Since a wiring of tungsten silicide is in an oxygen-rich atmosphere, silicide particles are prevented from appearing. Alternatively, the flow rate may be such that the silicon oxide film becomes about 100 angstroms and the refractive index becomes 1.450+ or -0.003.

公开(公告)号：JPH04107935A

公开(公告)日：1992-04-09

申请号：JP22721890

申请日：1990-08-28

Applicant: FUJITSU LTD ,  KYUSHU FUJITSU ELECTRONIC

Inventor： SASAKA MASAAKI

IPC: H01L21/56 ,  B29C45/26 ,  B29C45/37 ,  B29L31/34

Abstract: PURPOSE:To simplify a process of cleaning a molding die by applying acid- resistant coating to surfaces to be in contact with molding resin. CONSTITUTION:An upper base block 1, a lower base block 2, an upper center block 3, a lower center block 4, an upper chase block 5, and a lower chase block 6 are all made of iron. The upper center block 3, the lower center block 4, the upper chase block 5, and the lower chase block 6 are coated with acid- resistant polysilicon 11 in the areas to be in contact with molding resin. The polysilicon 11 may be deposited by CVD, evaporation, or sputtering. The polysilicon coating enables the use of a strong acid such as sulfuric acid or chloric acid that is very effective to clean the surfaces to be in contact with molding resin.

公开(公告)号：JPH01260833A

公开(公告)日：1989-10-18

申请号：JP8880688

申请日：1988-04-11

Applicant: FUJITSU LTD ,  KYUSHU FUJITSU ELECTRONIC

Inventor： SASAKA MASAAKI

IPC: H01L21/318

Abstract: PURPOSE:To obtain, for example, small and high capacitance capacitors formed in a semiconductor device with large scale integration, by forming an insulating film consisting of oxynitride by a chemical vapor growth by use of a reaction gas of a mixture of organic oxysilane and ammonia. CONSTITUTION:In a reaction pipe 12 which is heated by a heater at a prescribed temperature, silicon substrates 1 are placed on the substrate holder 13. A reaction gas supply tube 15 connected to one end of the reaction pipe is connected to the supply source of NH3 30 and a bubbling device 21. The bubbling device supplies a gas mixture 26 of organic oxysilane, for example, tetraethoxysilane 22 and N2 24 to the reaction gas supply tube. In the above device, a reaction gas 14 consisting of a gas mixture of NH3 and the gas mixture 26 is fed to the heated reaction pipe 12 and allows an oxynitride film to grow on the surface of the substrate. In such a case, the ratio of partial pressure of silicon to that of oxygen in the reaction pipe is always kept constant and its film grows under a stable condition. Thus, a capacitor comprising oxynitride as an insulating film is superior in reliability and makes it possible to mass-produce capacitors on the basis of designs of miniaturization and high capacitance and contributes to the realization of large scale integration of a semiconductor device.