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    MANUFACTURE OF FLAT DISPLAY PANEL, AND FLAT DISPLAY PANEL
    3.
    发明专利
    MANUFACTURE OF FLAT DISPLAY PANEL, AND FLAT DISPLAY PANEL 失效

    公开(公告)号：JPH10116560A

    公开(公告)日：1998-05-06

    申请号：JP27013496

    申请日：1996-10-11

    Applicant: FUJITSU LTD

    Inventor： KAWABE SHOICHI ,  SASAKA MASAAKI ,  MURAKAMI KOICHI

    IPC: B05C5/02 ,  C03C27/06 ,  E06B3/673 ,  G02F1/1339 ,  H01J9/26 ,  H01J11/44 ,  H01J11/48 ,  H01J17/16 ,  H01J9/24 ,  H01J11/02

    Abstract: PROBLEM TO BE SOLVED: To prevent the occurrence of a discharge gas or liquid crystal leakage inside a panel after the sealing thereof, as well as the occurrence of a substrate breakage or crack, regarding a method for manufacturing a flat display panel structured to have a pair of substrates pasted to each other at the prescribed gap. SOLUTION: A sealing member 3 is applied to a substrate 1 like a frame shape, with a nozzle for the discharge of the member 3 kept moving along the periphery of the substrate 1. Thereafter, the substrate 1 and another substrate 2 are pasted to each other via the sealing member 3, thereby manufacturing a flat display panel. Regarding this method for manufacturing the flat display panel, a nozzle travel end part B is set at a position different from the position of a nozzle travel start part A for the discharge of the sealing member 3. At the same time, the sealing member 3 is applied so that the nozzle travel start part A and the nozzle travel end part B are not superposed on the part coated like a frame shape.

    SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
    4.
    发明专利
    SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效

    公开(公告)号：JPH07245370A

    公开(公告)日：1995-09-19

    申请号：JP3241994

    申请日：1994-03-02

    Applicant: FUJITSU LTD ,  KYUSHU FUJITSU ELECTRONIC

    Inventor： SASAKA MASAAKI

    IPC: H01L23/28 ,  H01L21/56 ,  H01L23/50

    Abstract: PURPOSE:To prevent water content from permeating into the inside by improving the adhesion of a stage and resin, regarding a semiconductor device wherein a semiconductor element mounted on the stage of a lead frame is resin-sealed, and the manufacturing method of the device. CONSTITUTION:A plurality of electrodes of a semiconductor element 4 mounted on the surface of a stage 2 are electrically connected with lead terminals 3 formed in the peripheral part of the electrodes, by using wires 6. The periphery of the semiconductor element 4 is covered with protective resin, and a package 5 is so formed that the lead terminals 3 only are led out to the outside. In the above semiconductor device, a plurality of dimples 7 are formed on the rear of the stage 2, and a coating 8 is formed on the stage 3 rear having the dimples 7 so as to permeate into the dimples 7 in the manner in which the aperture part of the dimple 7 is narrow and the inside is wide.

    MANUFACTURE OF SEMICONDUCTOR DEVICE
    5.
    发明专利
    MANUFACTURE OF SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPH01151249A

    公开(公告)日：1989-06-14

    申请号：JP31053887

    申请日：1987-12-08

    Applicant: FUJITSU LTD ,  KYUSHU FUJITSU ELECTRONIC

    Inventor： SASAKA MASAAKI

    IPC: H01L21/768 ,  H01L21/31

    Abstract: PURPOSE:To form an interlayer insulating film whose content of an impurity such as phosphorus or the like is little and whose surface is flat by a method wherein an SiO2 film is applied, an impurity such as P2O5 or the like is applied to its surface and the surface is flattened by a heat treatment. CONSTITUTION:A first-layer polycrystalline silicon wiring part 3 is formed on a semiconductor substrate 1 via an SiO2 film 2; an SiO2 film 6 with a film thickness of about 1mum is grown on its surface. While the heated substrate is being turned, P2O5 7 isapplied to side faces of recessed parts in the SiO2 film 6 from a transverse direction. Then, a heat treatment (an annealing operation) is executed in an air stream of nitrogen; the surface of the SiO2 film 6 to which the P2O5 7 has been applied is melted; the surface of the SiO2 film is flattened and is transformed into a PSG film; the remaining P2O5 7 is etched and removed by using a solution of hydrofluoric acid. By this setup, the content of phosphorus in the PSG film can be reduced; the surface of the film can be flattened.

    PLANARIZATION OF INNER WALL OF QUARTZ TUBE AND COATING DEVICE THEREFOR
    6.
    发明专利
    PLANARIZATION OF INNER WALL OF QUARTZ TUBE AND COATING DEVICE THEREFOR 失效

    公开(公告)号：JPH05226259A

    公开(公告)日：1993-09-03

    申请号：JP2561192

    申请日：1992-02-13

    Applicant: FUJITSU LTD

    Inventor： SASAKA MASAAKI

    IPC: C30B25/08 ,  H01L21/205 ,  H01L21/22

    Abstract: PURPOSE:To prevent the adhesion of quartz particles to the surface of a semiconductor substrate under processing by coating an inner wall surface of a quartz tube with a silicon oxide film and forming a silicon oxide film on the inner wall surface which includes a recessed part formed on this inner wall surface. CONSTITUTION:A silicon oxide film is applied to an inner wall surface 1a of a quartz tube 1 by spraying SOG6, for example, from a nozzle 5 inserted into the center of the quartz tube 1. The nozzle 5 is arranged to move and return between one end of the quartz tube 1 and the other side of the quartz tube 1 during coating operation. The inner wall surface of the quartz tube 1 including the recessed part 1a is coated with the SOG6 in this manner. The quartz particles 7 are deposited on the inner wall surface 1a of the quartz tube 1 including the recessed part 1b. It is, therefore, possible to prevent the particles from spraying from the quartz tube 1 and adhering to the substrate during coating operation.

    CHEMICAL VAPOR DEPOSITION PROCESS
    7.
    发明专利
    CHEMICAL VAPOR DEPOSITION PROCESS 失效

    公开(公告)号：JPH01278732A

    公开(公告)日：1989-11-09

    申请号：JP10771188

    申请日：1988-05-02

    Applicant: FUJITSU LTD ,  KYUSHU FUJITSU ELECTRONIC

    Inventor： SASAKA MASAAKI

    IPC: H01L21/31

    Abstract: PURPOSE:To avoid the deposition of foreign matters on a specimen for enhancing the characteristics of a semiconductor device by a method wherein, after forming a deposited film by thermal cracking of organic silane in a reaction tube, oxidizing gas is led in to be reacted to hydrocarbon, alkyl radical on the inner wall of the reaction tube by heat treatment using this gas and then exhausted in gaseous state. CONSTITUTION:Evaporation gas of organic silane (c) passing through a valve 17 is led in a reaction tube 11 to deposit an SiO2 film on a specimen 14. When the SiO2 film in the specifically required thickness is deposited on the specimen 14, the valve 17 is closed and another valve 18 is opened to purge the reaction tube 11 of the evaporation gas using an inert gas and then the specimen 14 is taken out of the reaction tube 11. Next, before deposition-processing the specimen 14, the other valve 19 is opened to lead oxidizing gas to the reaction tube 11 for performing oxidation by heat treatment of this reaction tube 11 so that the oxidizing gas and hydrocarbon, alkyl radical contained in a deposited film formed in the reaction tube 11 may be reacted to be exhausted as carbon dioxide gas (CO2) and water (H2O). Through these procedures, the hydrocarbon, alkyl radical can be removed from the deposited film so that the foreign matter deposition using the hydrocarbon, alkyl radical as cores may be avoided to prevent particles in the reaction tube 11 from increasing.

    MANUFACTURE OF SEMICONDUCTOR DEVICE
    8.
    发明专利
    MANUFACTURE OF SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPS6484634A

    公开(公告)日：1989-03-29

    申请号：JP24096787

    申请日：1987-09-28

    Applicant: FUJITSU LTD ,  KYUSHU FUJITSU ELECTRONIC

    Inventor： INOUE FUMIHIKO ,  SASAKA MASAAKI

    IPC: H01L21/318 ,  H01L21/31 ,  H01L21/76

    Abstract: PURPOSE:To prevent the angle parts that a semiconductor substrate makes with a groove from exposing by a method wherein the groove in a groove type interelement isolation is filled with an Si nitride film grown by an ECR.CVD method. CONSTITUTION:An SiO2 film 22 is formed on an Si semiconductor substrate 21 and an SiO2 film 23 is formed thereon. Then, an etching is performed to form a groove 21A. The surface, which is exposed in the groove 21A, of the substrate 21 is oxidized to form an SiO2 film 25. Then, an SiN film 26 to fill sufficiently the interior of the groove 21A is formed by applying an electron cyclotron resonance chemical vapor phase deposition method (ECR.CVD method). After this, after the films 23 and 22 are removed, an interelement isolation on the periphery of memory cell is performed by applying a normal selective thermal oxidation method.

    METHOD AND APPARATUS FOR SCREEN PRINTING
    9.
    发明专利
    METHOD AND APPARATUS FOR SCREEN PRINTING 失效

    公开(公告)号：JPH1120127A

    公开(公告)日：1999-01-26

    申请号：JP18018097

    申请日：1997-07-04

    Applicant: FUJITSU LTD

    Inventor： SHIRAKAWA YOSHIMI ,  KAWABE SHOICHI ,  SASAKA MASAAKI ,  SANPEI MINORU

    IPC: B41F15/36 ,  B41F15/40 ,  B41M1/12 ,  H01J9/227 ,  H05K3/12

    Abstract: PROBLEM TO BE SOLVED: To immediately deal with dimensional error or specification change by facilitating designing of a screen mask for forming a stripe-like luminophor of a plasma display panel. SOLUTION: The method for screen printing by forming an opening corresponding to a printing pattern and printing by using a screen 3 extended in a frame 2 to print printing material on a surface 10 to be printed comprises the steps of applying an external force from a side of the frame 2 to the frame 2 to deform the frame 2, and printing the material on the surface 10 via an opening of the screen 3 in the state that an opening size of the screen 3 is contracted. The apparatus for screen printing comprises a screen 3 having a printing material passing opening of the shape corresponding to a printing pattern, a quadrilateral screen fixing frame for supporting the screen 3 under predetermined tension, and a means 4 for applying pressure to at least one side of two opposed frame sides in the frame.

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