公开(公告)号：CA2929071A1

公开(公告)日：2015-05-07

申请号：CA2929071

申请日：2014-08-19

Applicant: GEN ELECTRIC

Inventor： LIPKIN DON MARK ,  JOHNSON CURTIS ALAN ,  MARGOLIES JOSHUA LEE ,  ROSENZWEIG LARRY STEVEN ,  WAN JULIN

IPC: C04B41/89 ,  F01D5/28

Abstract: A method of forming an article includes forming a silicon-containing layer on a silicon-containing region of a surface of a substrate of the article; forming a plurality of channels and ridges in the silicon-containing layer; and forming at least one outer layer overlying the surface of the silicon-containing region. The plurality of channels and ridges may be formed by adding silicon-containing material to the silicon-containing layer. The channels and ridges may be formed by subtracting material from the silicon-containing layer. The channels and ridges may be formed by forming channels or grooves in the silicon-containing region of the surface of the substrate prior to formation of the silicon-containing layer.