PHOTODETECTORS AND ABSORBERS WITH SLANTED LIGHT INCIDENCE

    公开(公告)号:US20220344523A1

    公开(公告)日:2022-10-27

    申请号:US17241525

    申请日:2021-04-27

    Abstract: Structures for a photodetector or light absorber and methods of forming a structure for a photodetector or light absorber. The structure includes a pad, a waveguide core adjoined to the pad, and a light-absorbing layer on the pad. The waveguide core includes a first longitudinal axis, and the light-absorbing layer includes a second longitudinal axis and an end surface intersected by the second longitudinal axis. The end surface of the light-absorbing layer is positioned adjacent to the waveguide core. The first longitudinal axis of the first waveguide core is inclined relative to the second longitudinal axis of the light-absorbing layer and/or the end surface slanted relative to the second longitudinal axis.

    PHOTONIC INTEGRATED CIRCUIT INCLUDING PASSIVE OPTICAL GUARD

    公开(公告)号:US20230408763A1

    公开(公告)日:2023-12-21

    申请号:US17807257

    申请日:2022-06-16

    CPC classification number: G02B6/122 G02B2006/12126 G02B6/13

    Abstract: The disclosure relates to a PIC structure including a photonic component on a semiconductor substrate. A passive optical guard is composed of a light absorbing material and is in proximity to the photonic component. The passive optical guard includes at least a portion in an active semiconductor layer of the semiconductor substrate and may be entirely below a first metal layer. The passive optical guard may include at least one of: a germanium body positioned at least partially in a silicon element in the active semiconductor layer, a silicon body having a high dopant concentration in the active semiconductor layer, and a polysilicon body having a high dopant concentration over the silicon body.

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